Page 1
QM5HG-24
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
• IC Collector current ............................ 5A
• V
CEX Collector-emitter voltage ......... 1200V
• h
FE DC current gain................................. 5
• Non-Insulated Type
APPLICATION
Base driver for High voltage transistor modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
15.6
13.6
4.5
1.5
C
B
2
E
0.7
1.8
4.4
2
5
2
1
12.6
9.6
BCE
1
5
20
2
4
20
5.45
5.45
0.6
2.8
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX
V
VCBO
VEBO
IC
PC
IB
Tj
Tstg
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
—
Mounting torque
—
Weight
Parameter
EB=2V
V
Emitter open
Collector open
DC
C=25°C
T
DC
Mounting screw M3
Typical value
Conditions
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
V
CE=1200V, VEB=2V
CB=1200V, Emitter open
V
EB=7V
V
I
C=3A, IB=0.6A
I
C=3A, VCE=1V
CC=600V, IC=3A, IB1=0.6A, –IB2=1.2A
V
Transistor part
Diode part
Conductive grease applied
Test conditions
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
Min.
—
—
—
—
—
5
—
—
—
—
—
—
Ratings
1200
1200
7
5.0
100
2
–40~+150
–40~+125
0.59~0.98
6~10
5
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
50
1.0
1.5
—
1.0
4.0
0.8
1.25
—
0.5
Unit
V
V
V
A
W
A
°C
°C
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM5HG-24
MEDIUM POWER SWITCHING USE
NON-INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
8
Tj=25°C
7
C (A)
6
5
4
3
2
COLLECTOR CURRENT I
1
0
012 345
IB=400mA
IB=200mA
IB=100mA
IB=1A
IB=0.5A
10
FE
10
DC CURRENT GAIN h
10
10 2345
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
Tj=25°C
7
5
4
j
=125°C
T
3
2
1
7
5
4
VCE=1V
3
2
0
–1
7
10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
, VBE (sat) (V)
CE (sat)
10
SATURATION VOLTAGE V
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
2
0
V
BE(sat)
7
5
4
3
2
V
–1
CE(sat)
7
5
4
3
2
–1
10
COLLECTOR CURRENT I
0
10 7543275432
IB=400mA
Tj=25°C
T
j
=125°C
C (A)
10
on, ts, tf (µs)
SWITCHING TIME t
1
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
1
10
7
5
4
3
2
t
10
0
f
7
5
4
3
2
–1
10
57 74
t
on
234010
COLLECTOR CURRENT I
VCE=5.0V
0
23457110
I
-–I
t
s
VCC=600V
B
1
=0.6A
B
2
=1.2A
Tj=25°C
Tj=125°C
2345110
C (A)
Feb.1999
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