Page 1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC chopper, DC motor controllers, Inverters
QM50E2Y/E3Y-2H
• IC Collector current .......................... 50A
• V
CEX Collector-emitter voltage ......... 1000V
• h
FE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
94
80
(7) (7)
2323
φ6.5
12
34
13 10.510.5
E
1
B
1
M5
Tab#110,
t=0.5
6.5
22.5
(8)
31
C
1
A
1
E
1
B
1
E
1
D
1
D
2
D
2
D
1
E
1
E
1
B
1
C
1
K
1
23
LABEL
(E
2
Y)
(E
3
Y)
Page 2
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)
Symbol
V
CEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Conditions
I
C=1A, VEB=2V
V
EB=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1000
1000
1000
7
50
50
400
3
500
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)
Symbol
V
RRM
VRSM
VR (DC)
IDC
IFSM
I
2
t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
I
2
t
for fusing
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
Ratings
1000
1100
800
50
1000
4.2 × 10
3
Unit
V
V
V
A
A
A
2
s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
T
j
Tstg
Viso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE=1000V, VEB=2V
V
CB=1000V, Emitter open
V
EB=7V
I
C=50A, IB=1A
–I
C=50A (diode forward voltage)
I
C=50A, VCE=2.8V/5V
V
CC=600V, IC=50A, IB1=–IB2=1A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
25
3.5
1.8
—
2.5
15
3.0
0.31
1.2
0.15
ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)
Page 3
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25°C)
Symbol
I
RRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
V
R=VRRM, Tj=150°C
I
F=50A
I
F=50A, di/dt=–100A/µs, VR=600V, Tj=150°C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
µs
µC
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
Max.
10
1.5
1.0
25
0.65
0.15
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
C (A)
DC CURRENT GAIN h
FE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT I
B (A)
SATURATION VOLTAGE V
CE (sat)
, VBE (sat) (V)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.6 2.0 2.4 2.8 3.2 3.6
VCE=2.8V
T
j
=25°C
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0
10 23457110 23457210
2
VCE=2.8V
VCE=5.0V
Tj=25°C
Tj=125°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10 23457110 23457210
Tj=25°C
Tj=125°C
V
BE(sat)
V
CE(sat)
IB=1A
100
80
60
40
20
0
0 1.0 2.0 3.0 4.0 5.0
Tj=25°C
IB=2.0A
IB=1.0A
IB=0.5A
IB=0.3A
IB=0.1A
Page 4
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
VCE (sat) (V)
SWITCHING TIME t
on, ts, tf (µs)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t
s, tf
(µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE V
CE (V) CASE TEMPERATURE TC (°C)
COLLECTOR CURRENT I
C (A)
COLLECTOR CURRENT I
C (A)DERATING FACTOR (%)
3
10
2
10
1
10
0
10
3
10
2
10
1
10
0
10
100
80
60
40
20
0
0 20 60 100 120 16040 80 140
10
30
50
70
90
1
10
7
5
4
3
2
0
10
7
5
4
3457
0
10 23457110
–1
10
2
3
3
2
t
s
Tj=25°C
Tj=125°C
IB1=1A
V
CC
=600V
IC=50A
t
f
160
0
0 1000
800600400200
20
40
60
80
100
120
140
IB2=–3A
Tj=125°C
IB2=–1A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
50µs
1ms
DC
TC=25°C
NON-REPETITIVE
–1
10 7543275432
0
1.0
2.0
3.0
4.0
5.0
0
10 2
–2
10
Tj=25°C
Tj=125°C
IC=20A
IC=30A
IC=50A
1
10
7
5
4
3
2
0
10
7
5
4
3
23457
1
10 23457210
2
0
10
2
Tj=25°C
Tj=125°C
t
f
IB1=–IB2=1A
V
CC
=600V
t
on
t
s
COLLECTOR
DISSIPATION
SECOND BREAKDOWN AREA
Page 5
Feb.1999
PERFORMANCE CURVES (Diode part (D1))
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
Zth (j-c) (°C/W)
TIME (s)
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
FORWARD CURRENT I
F (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE VF (A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
FORWARD CURRENT I
F (A) TIME (s)
Irr (A), Qrr (µc)
SURGE FORWARD CURRENT I
FSM (A)Z
th (j-c)
(°C/W)
trr (µs)
0
10
–1
10
–2
10
–3
10
1
10
0
10
–1
10
2
10
1
10
0
10
–1
10
2
10
1
10
0
10
3
10
2
10
0
10
1
10
1
10
0
10
0
10
–1
10
–2
10
–3
10
2
10
1
10 75432
0
10
75432
0
100
200
300
400
500
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4 0.8 1.2 1.6 2.0 2.4
Tj=25°C
Tj=125°C
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
Tj=25°C
Tj=125°C
VCC=600V
I
B1
=–IB2=1A
I
rr
Q
rr
t
rr
753275327532
0
327532
0.4
2.0
444
445
0.8
1.2
1.6
753275327532
0
5327532
0.5
444
44
0.4
0.3
0.2
0.1
7
Page 6
Feb.1999
Irr (A), Qrr (µC)
SURGE FORWARD CURRENT I
FSM (A)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS
(VS. I
F) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I
F (A)
di/dt (A/µs)
Irr (A), Qrr (µC)
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
FORWARD CURRENT I
F (A)
FORWARD VOLTAGE VF (V)
PERFORMANCE CURVES (Diode part (D2))
Zth (j–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
TIME (s)
trr (µs)
t
rr (µs)
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
–1
10
2
10
1
10
0
10
2
10
1
10
0
10
–1
10
0
10
1
10
2
10
3
10
–1
10
2
10
1
10
0
10
1
10
0
10
–1
10
–3
10
–2
10
0
10
3
10
2
10
1
10
0
10
2
10
1
10 75432
0
10
75432
0
200
400
600
800
1000
7
5
3
2
7
5
3
2
7
5
3
2
0.6 1.0 1.4 1.8 2.2
Tj=25°C
753275327532
0.2
0.4
0.6
0.8
1.0
0
532532
444
44
7
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
VR=600V
di/dt=–100A/µs
I
rr
Q
rr
t
rr
Tj=25°C
Tj=150°C
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
Tj=25°C
Tj=150°C
VR=600V
I
F
=100A
I
rr
Q
rr
t
rr
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