Page 1
QM30HQ-24
MITSUBISHI TRANSISTOR MODULES
QM30HQ-24
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
• IC Collector current .......................... 30A
• V
CEX Collector-emitter voltage ......... 1200V
• h
FE DC current gain................................. 5
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Base driver for High voltage transistor modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
70
Tab # 187,
t=0.5
60
E
0.8
BC
15 15
6
4.75
φ1.3
2–φ 5.5
(16.5)
C
B
27
E
3.2
7.5
LABEL
2.5
6.35
15
23.5
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
PC
IB
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector dissipation
Base current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
IC=1A, VEB=2V
EB=2V
V
Emitter open
Collector open
DC
C=25°C
T
DC
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Conditions
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
CEX
I
ICBO
IEBO
VCE (sat)
VBE (sat)
hFE
ton
ts
tf
Rth (j-c) Q
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Switching time
Thermal resistance (junction to case)
Contact thermal resistance
(case to fin)
V
CE=1200V, VEB=2V
CB=1200V, Emitter open
V
EB=7V
V
I
C=15A, IB=3A
C=15A, VCE=1V
I
CC=600V, IC=15A, IB1=–IB2=3A
V
Transistor part
Conductive grease applied
Test conditions
MITSUBISHI TRANSISTOR MODULES
QM30HQ-24
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
Min.
—
—
—
—
—
5
—
—
—
—
—
Ratings
1200
1200
1200
7
30
310
6
–40~+150
–40~+125
2500
1.47~1.96
15~20
90
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
1.0
1.5
—
1.5
7.0
2.0
0.4
0.25
Unit
V
V
V
V
A
W
A
°C
°C
V
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
—
µs
µs
µs
°C/W
°C/W
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM30HQ-24
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
40
30
20
Tj=25°C
IB=5A
IB=3A
C (A)
IB=2A
10
COLLECTOR CURRENT I
0
012345
IB=1A
IB=0.5A
FE
DC CURRENT GAIN H
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
10
7
5
3
2
1
10
7
5
3
10
10
2
0
7
5
3
2
–1
10
–1
10
Tj=25°C
Tj=125°C
0
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
1
10
7
5
Tj=25°C
3
Tj=125°C
2
0
10
CE (sat), VBE (sat) (V)
7
5
3
2
–1
10
7
5
3
2
–2
10
10
–1
SATURATION VOLTAGE V
COLLECTOR CURRENT I
VCE(sat)
10
VBE(sat)
0
IB=3.0A
1
10
C (A)
2
10
444
753275327532
VCE=1.0V
1
10
2
10
444
753275327532
Feb.1999
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