Page 1
QM200HA-HK
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• V
CEX Collector-emitter voltage ........... 600V
• h
FE DC current gain...............................75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
4–φ5.5
61
39
3–M5
18.8 23 23 17.5
E2
C2E1
B1X
80±
0.25
(12) (12)(12)
C1
1.3
E1B1
Tab#110, t=0.5
306
0.25
48±
9.5
20.5
0.1
9±
LABEL
E1
C1
(E2)
29
–0.5
(C2E1)
B1X
28
+1.5
20.5
8
C1
E1
B1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
CEX (SUS)
V
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
Conditions
C=1A, VEB=2V
I
EB=2V
V
Emitter open
Collector open
DC
DC (forward diode current)
C=25°C
T
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M5
Typical value
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
Ratings
600
600
600
7
200
200
1250
12
2000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.47~1.96
15~20
420
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Symbol
I
CEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Parameter
Test conditions
CE=600V, VEB=2V
V
CB=600V, Emitter open
V
EB=7V
V
I
C=200A, IB=2.6A
–I
C=200A (diode forward voltage)
C=200A, VCE=2V/5V
I
CC=300V, IC=200A, IB1=–IB2=4A
V
Transistor part
Diode part
Conductive grease applied
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
4.0
4.0
200
2.0
2.5
1.75
—
2.0
12
3.0
0.1
0.39
0.05
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
400
Tj=25°C
IB=4.0A
320
C (A)
IB=2.0A
240
160
80
IB=1.0A
IB=0.5A
IB=0.2A
COLLECTOR CURRENT I
0
01 23 4 5
10
FE
10
10
DC CURRENT GAIN h
10
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
4
Tj=25°C
7
5
3
2
3
7
5
3
2
2
7
5
3
2
1
10
j
=125°C
T
VCE=2.0V
0
1
10
444
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
1
10
7
5
4
3
B (A)
2
0
10
7
5
4
3
BASE CURRENT I
2
–1
10
1.0 1.4 1.8 2.2 2.6 3.0
VCE=2.0V
Tj=25°C
, VBE (sat) (V)SWITCHING TIME t
CE (sat)
10
SATURATION VOLTAGE V
10
10
10
7
5
3
2
7
5
3
2
7
5
3
2
–1
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2
IB=2.6A
Tj=25°C
j
=125°C
T
1
V
BE(sat)
0
V
CE(sat)
10
0
1
10
444
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
10
10
2
2
VCE=5.0V
3
10
753275327532
3
10
753275327532
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
VCE (sat) (V)
2
VOLTAGE
1
COLLECTOR-EMITTER SATURATION
0
–1
10
75 75324 7532477
IC=100A
10
BASE CURRENT I
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
Tj=25°C
j
=125°C
T
IC=300A
IC=200A
0
1
10
4
327
B (A) COLLECTOR CURRENT IC (A)
10
7
VCC=300V
5
IB1=–IB2=4A
Tj=25°C
3
2
T
j
1
10
on, ts, tf (µs)
7
5
3
2
0
10
7
5
3
2
–1
10
10
=125°C
0
1
10
444
t
s
t
on
t
f
10
2
3
10
753275327532
Feb.1999
Page 4
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
REVERSE BIAS SAFE OPERATING AREA
CURRENT (TYPICAL)
2
VCC=300V
1
10
(µs)
s, tf
SWITCHING TIME t
IC=200A
7
7
IB1=4A
5
4
3
2
0
10
7
7
5
4
3
2
–1
10 23457010 23457110
tf
Tj=25°C
T
j=125°C
ts
400
C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I
300
200
100
COLLECTOR CURRENT I
Tj=125°C
0
0 200 800
100 300 500 700
400 600
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
3
10
7
5
3
C (A)
COLLECTOR CURRENT I
2
2
10
7
5
3
2
1
10
7
5
3
TC=25°C
2
NON–REPETITIVE
0
10
0
10
444
10
10m
DC
1
COLLECTOR-EMITTER VOLTAGE V
50µ
S
100µ
500µ
1m
S
S
10
S
S
2
3
10
753275327532
CE (V) CASE TEMPERATURE TC (°C)
100
90
80
70
60
50
40
30
20
10
0
0 16020
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
40 60 80 100 120 140
IB2=–3A
IB2=–8A
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
23457
10
0.16
10
1
0.14
0.12
0.10
(°C/ W)
0.08
0.06
Zth (j–c)
0.04
0.02
0
10
–3
–2
10
444
TIME (s)
10
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
3
10
C (A)
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
–1
753275327532
10
0
10
0.4 0.8 1.2 2.00
Tj=25°C
T
j=125°C
1.6
COLLECTOR-EMITTER REVERSE VOLTAGE
CEO (V)
–V
Feb.1999
Page 5
MITSUBISHI TRANSISTOR MODULES
QM200HA-HK
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
2000
1600
1200
CSM (A)
800
–I
400
0
0
10
SURGE COLLECTOR REVERSE CURRENT
10 75432
75432
1
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0
10
23457 23457
0.40
10
1
0.32
0.24
(°C/ W)
0.16
Zth (j–c)
10
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
3
10
VCC=300V
7
5
IB1=–IB2=4A
Tj=25°C
3
2
2
10
7
5
3
2
(A), Qrr (µc)
1
Irr
10
7
5
3
2
0
2
10
10
j=125°C
T
Irr
Qrr
trr
0
1
10
444
10
2
2
10
1
10
rr (µs)
t
0
10
–1
10
3
10
753275327532
0.08
0
10
–3
–2
10
444
10
–1
TIME (s)
0
753275327532
10
Feb.1999
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