Page 1
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
PACKAGE DIMENSIONS
FEATURES
• != 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Medium Wide Emission Angle, 40°
• High Output Power
• Package material and color: Clear, purple tinted, plastic
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
PLASTIC INFRARED LIGHT
EMITTING DIODE
2001 Fairchild Semiconductor Corporation
DS300337 12/07/01 1 OF 4 www.fairchildsemi.com
QED221 QED222 QED223
DESCRIPTION
The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package.
ANODE
CATHODE
Page 2
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
200 mW
Peak Forward Current
(5)
I
F(Peak)
1.5 A
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 100 mA !
PE
— 880 — nm
Emission Angle IF= 100 mA " — ±20 — Deg.
Forward Voltage IF= 100 mA, tp = 20 ms V
F
——1.7 V
Reverse Current VR= 5 V I
R
——10 µA
Radiant Intensity QED221 IF= 100 mA, tp = 20 ms I
E
10 — 20 mW/sr
Radiant Intensity QED222 IF= 100 mA, tp = 20 ms I
E
16 — 32 mW/sr
Radiant Intensity QED223 IF= 100 mA, tp = 20 ms I
E
25 ——mW/sr
Rise Time
I
F
= 100 mA
t
r
— 800 — ns
Fall Time t
f
— 800 — ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C)
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221 QED222 QED223
www.fairchildsemi.com 2 OF 4 12/07/01 DS300337
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16” (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 µS, T = 10 ms.
Page 3
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221 QED222 QED223
DS300337 12/07/01 3 OF 4 www.fairchildsemi.com
Fig. 1 Normalized Radiant Intensity vs. Input Current
10
1
0.1
0.01
NORMALIZED RADIANT INTENSITY
0.001
110
Normalized to:
= 100 mA, TA = 25˚C
I
F
Pulse Width = 100 µs
IF - INPUT CURRENT (mA)
Fig. 3 Forward Voltage vs. Temperature
2.5
IF = 50 mA
IF = 10 mA
- FORWARD VOLTAGE (V)
F
V
2
1.5
1
0.5
0
Pulse Width = 100 µs
Duty Cycle = 0.1%
-30-40 -20-10 0 102030405060708090100
100 1000
IF = 100 mA
IF = 20 mA
Fig. 2 Coupling Characteristics of QED22X with QSD12X
1
0.8
0.6
0.4
0.2
0
NORMALIZED COLLECTOR CURRENT
01
IF = 100 mA
IF = 20 mA
2345
Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%
= 5 V
V
CC
R
= 100 Ω
L
= 25˚C
T
A
LENS TIP SEPERATION (INCHES)
Fig. 4 Normalized Radiant Intensity vs. Wavelength
1.0
0.9
Y
T
0.8
NSI
E
T
0.7
N
I
T
0.6
N
A
0.5
RADI
0.4
D
E
IZ
0.3
AL
M
0.2
R
NO
0.1
6
TA - TEMPERATURE (˚C)
775 800 825 850 875 900 925 950
λ (nm)
Fig. 5 Forward Current vs. Forward Voltage
1000
TA = 25˚C
100
10
- FORWARD CURRENT (mA)
1
F
I
12
40
50
60
70
80
90
3
4
Fig. 6 Radiation Pattern
0˚
10
20
30
020406080100020406080100
-10
-20
-30
-40
-50
-60
-70
-80
-90
VF - FORWARD VOLTAGE (V)
Page 4
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221 QED222 QED223
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
www.fairchildsemi.com 4 OF 4 12/07/01 DS300337
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