Datasheet QEC112, QEC113 Datasheet (Fairchild Semiconductor)

0.030 (0.76)
NOM

0.116 (2.95)

0.193 (4.90)

0.800 (20.3)
MIN

0.050 (1.27)

0.100 (2.54)
NOM

0.018 (0.46)
SQ. (2X)

0.155 (3.94)

CATHODE

0.052 (1.32)

0.032 (0.082)

REFERENCE

SURFACE

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC



2001 Fairchild Semiconductor Corporation

DS300334 5/21/01 1 OF 3 www.fairchildsemi.com

PACKAGE DIMENSIONS

DESCRIPTION

The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.

QEC112 QEC113

FEATURES

• D= 940 nm

• Chip material = GaAs

• Package type: T-1 (3mm)

• Matched Photosensor: QSC112

• Narrow Emission Angle, 24°

• High Output Power

• Package material and color: Clear, peach tinted plastic

PLASTIC INFRARED

LIGHT EMITTING DIODE

ANODE

CATHODE

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-40 to +100 °C

Storage Temperature T

STG

-40 to +100 °C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

Continuous Forward Current I

F

50 mA

Reverse Voltage V

R

5V

Power Dissipation

(1)

P

D

100 mW

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF= 100 mA D

PE

— 940 — nm

Emission Angle IF= 100 mA 201/

2

24 Deg.

Forward Voltage IF= 100 mA, tp = 20 ms V

F

— — 1.5 V

Reverse Current VR= 5 V I

R

——10µA

Radiant Intensity QEC112 IF= 100 mA, tp = 20 ms I

E

6 — 30 mW/sr

Radiant Intensity QEC113 IF= 100 mA, tp = 20 ms I

E

14 — — mW/sr

Rise Time

I

F

= 100 mA

t

r

— 1000 — ns

Fall Time t

f

— 1000 — ns

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C)

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron

1/16” (1.6mm) minimum from housing.

QEC112 QEC113

PLASTIC INFRARED

LIGHT EMITTING DIODE

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QEC112 QEC113

PLASTIC INFRARED

LIGHT EMITTING DIODE

TYPICAL PERFORMANCE CURVES

DS300334 5/21/01 3 OF 4 www.fairchildsemi.com

Fig.1 Normalized Radiant Intensity vs. Forward Current

10

Normalized to:

= 100 mA Pulsed

I

F

t

= 100 µs

pw

Duty Cycle = 0.1 %

1

= 25˚C

T

A

0.1

0.01

- NORMALIZED RADIANT INTENSITY

e

I

0.001
1 10 100 1000

IF - FORWARD CURRENT (mA) LENS TIP SEPARATION (INCHES)

Fig.3 Forward Voltage vs. Ambient Temperature

2.0

IF = 50 mA

1.5

1.0

0.5

Normalized to:

- FORWARD VOLTAGE (V)

F

V

Pulsed

I

F

t

pw

Duty Cycle = 0.1 %

0.0

-40 -20 0 20 40 60 80 100

IF = 20 mA

= 100 µs

TA - AMBIENT TEMPERATURE (˚C)

IF = 100 mA

IF = 10 mA

Fig.2 Coupling Characteristics of QEC11X And QSC11X

1.0

0.8

0.6

0.4

0.2

IF = 20 mA

(ON) - NORMALIZED COLLECTOR CURRENT (mA)

C

0.0

I

012345678

IF = 100 mA

Fig. 4 Normalized Intensity vs. Wavelength

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

NORMALIZED INTENSITY

0.2

0.1

0.0
875 900 925 950 975 1000 1025

Normalized to:
d = 0

Pulsed

I

F

= 100 µs

t

pw

Duty Cycle = 0.1 %

= 5 V

V

CC

= 100 Ω

R

L

= 25˚C

T

A

λ (nm)

Fig. 5

Radiation Diagram

90

80

70

60

50

40

30

0.0

0.0 0.2 0.4 0.6 0.8 1.0

20

10

0

180

170

160

100

110

120

130

140

150

0.2

0.4

0.6

0.8

1.0

QEC112 QEC113

PLASTIC INFRARED

LIGHT EMITTING DIODE

www.fairchildsemi.com 4 OF 4 5/21/01 DS300334

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.