Page 1
11
QCA75AA100
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA75AA100
Unit
VCBO Collector-Base Voltage 1000 V
VCEX Collector-Emitter Voltage
VBE 2V
1000 V
Emitter-Base Voltage
VVEBO 7
IC Collector Current 75 A
IC
Reverse Collector Current 75 A
I
B
Base Current 4 A
P
T
Total power dissipation
TC 25
500 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
N m
f B
Mass Typical Value 250 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
1.00
200
75
2.50
3.50
2.50
15.00
3.00
1.80
0.25
1.20
Unit
ICBO Collector Cut-off Current
VCB1000V
mA
IEBO Emitter Cut-off Current
VEB7V
mA
1000
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic 15A I
B2
4A
V
h
FE
DC Current Gain
Ic 75A VCE2.8V
100
Ic 75A VCE5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 75A IB1.5A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 75A IB1.5A
V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 75A
I
B1
1.5A I
B2
1.5A
Ic 75A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QCA75AA100 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC 75A, VCEX 1000V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Page 2
12
QCA75AA100
Page 3
13
QCA75AA120
TRANSISTOR MODULE
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA75AA120
Unit
VCBO Collector-Base Voltage 1200 V
VCEX Collector-Emitter Voltage
VBE 2V
1200 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current 75 A
IC
Reverse Collector Current 75 A
I
B
Base Current 4 A
P
T
Total power dissipation
TC 25
500 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting
M6
Terminal M5
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 1.5 2.5 15 25 2.7 28
N m
(
f B)
Mass Typical Value 250 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
1.00
300
75
3.00
3.50
2.50
15.00
3.00
1.80
0.25
1.20
Unit
ICBO Collector Cut-off Current
VCB1200V
mA
IEBO Emitter Cut-off Current
VEB10V
mA
1200
V
CEX SUS
Collector Emitter Sustaning Voltage
Ic 15A I
B2
3A
V
h
FE
DC Current Gain
Ic 75A VCE5V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 75A IB1.5A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 75A IB1.5A
V
s
V
/W
ton On Time
Storage Time
Fall Time
ts
tf
Vcc 600V Ic 75A
I
B1
1.5A I
B2
1.5A
Ic 75A
Transistor part
Diode part
V
ECO
Rth(j-c)
Switching
Time
Collector-Emitter Reverse Voltage
QCA75AA120 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC 75A, VCEX 1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Page 4
14
QCA75AA120
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