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QCA200BA60
TRANSISTOR MODULE
Hi-
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA200BA60
Unit
VCBO Collector-Base Voltage 600 V
VCEX Collector-Emitter Voltage
VBE 2V
600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 200 400
A
IC
Reverse Collector Current 200 A
I
B
Base Current 12 A
P
T
Total power dissipation
TC 25
1250 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500
Mounting
Torque
Mounting
M6
Terminal
M6
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 2.5 3.9 25 40 4.7 48
N m
(
f B)
Mass Typical Value 470 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
2.0
800
750
2.5
3.0
2.0
8.0
2.0
1.8
0.1
0.3
Unit
I
CBO
Collector Cut-off Current
VCBV
CBO
mA
I
EBO
Emitter Cut-off Current
VEBV
EBO
mA
450
V
CEO SUS
V
CEX SUS
Collector Emitter Sustaning
Voltage
Ic 1A
600
Ic 40A I
B2
8A
V
h
FE
D.C. Current Gain
Ic 200A VCE2.5V
V
CE sat
Collector-Emitter Saturation Voltage
Ic 200A IB0.26A
V
V
BE sat
Base-Emitter Saturation Voltage
Ic 200A IB0.26A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc 300V Ic 200A
I
B1
0.4A I
B2
4A
Ic 200A
V
ECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200 ns
Vcc 300V, Ic 200A, di/dt 200A/ s, VBE5V
trr Reverse Recovery time
QCA200BA60 is a dual Darlington power transistor module which has series-connected
ULTRA HIGH h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr
200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction,
IC 200A, VCEX 600V
Low saturation voltage for higher efficiency.
ULTRA HIGH DC current gain hFE. hFE750
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
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QCA200BA60
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