Page 1
27
QCA200A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA200A40 QCA200A60
Unit
VCBO Collector-Base Voltage 400 600 V
VCEX Collector-Emitter Voltage
VBE 2V
400 600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 200 400
A
IC
Reverse Collector Current 200 A
I
B
Base Current 12 A
P
T
Total power dissipation
TC 25
1250 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting M6
Terminal M6
Recommended Value 2.5 3.9 25 40
4.7 48
Recommended Value 2.5 3.9 25 40
4.7 48
N m
(
f B)
Mass Typical Value 470 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
2.0
800
75
2.0
2.5
2.0
12.0
3.0
1.4
0.1
Unit
ICBO Collector Cut-off Current
VCBV
CBO
mA
IEBO Emitter Cut-off Current
VEBV
EBO
mA
300
V
CEO SUS
Collector Emitter
Sustaning Voltage
QCA200A40
QCA200A60
QCA200A40
QCA200A60
Ic 1A
V
450
400
V
CEX SUS
Ic 40A I
B2
8A
V
600
h
FE
DC Current Gain
Ic 200A VCE2V
Ic 200A VCE5V
100
VCE(sat)
Collector-Emitter Saturation Voltage
Ic 200A IB2.7A
V
V
BE(sat)
Base-Emitter Saturation Voltage
Ic 200A IB2.7A
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
0.3Diode part
ts
tf
Vcc 300V Ic 200A
I
B1
4A I
B2
4A
Ic 200A
V
ECO
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
QCA200 is a dual Darlington power transistor module which has series- connected high
speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC 200A VCEX 400/600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
High DC current gain h
FE
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Page 2
28
QCA200A40/60
Loading...