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QCA150BA60
TRANSISTOR MODULE
Hi-
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings
Tj 25
Electrical Characteristics
Tj 25
Symbol Item Conditions
Ratings
QCA150BA60
Unit
VCBO Collector-Base Voltage 600 V
VCEX Collector-Emitter Voltage
VBE 2V
600 V
Emitter-Base Voltage
VVEBO 10
IC Collector Current
=pw 1ms 150 300
A
IC
Reverse Collector Current 150 A
I
B
Base Current 9 A
P
T
Total power dissipation
TC 25
690 W
T
j
Junction Temperature
40 150
Tstg Storage Temperature
40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
Mounting M6
Termina
l M5
Recommended Value 1.5 2.5 15 25 2.7 28
Recommended Value 1.5 2.5 15 25 2.7 28
N m
(
f B)
Mass Typical Value 370 g
Unit A
Symbol Item Conditions
Ratings
Min. Max.
2.0
600
750
2.5
3.0
2.0
8.0
2.0
1.8
0.18
0.6
Unit
I
CBO
Collector Cut-off Current
VCBV
CBO
mA
I
EBO
Emitter Cut-off Current
VEBV
EBO
mA
450
V
CEO SUS
V
CEX SUS
Collector Emitter Sustaning
Voltage
Ic 1A
600
Ic 30A I
B2
5A
V
h
FE
D.C. Current Gain
Ic 150A VCE2.5V
V
CE sat
Collector-Emitter Saturation Voltage
Ic 150A IB200mA
V
V
BE sat
Base-Emitter Saturation Voltage
Ic 150A IB200mA
V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
ts
tf
Vcc 300V Ic 150A
I
B1
300mA I
B2
3A
Ic 150A
V
ECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200 ns
Vcc 300V Ic 150A di/dt 150A/ s V
BE
5V
trr Reverse Recovery time
Diode part
QCA150BA60 is a dual Darlington power transistor module which has series-connected
ULTRA HIGH h
FE
, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr
200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction.
IC 150A, VCEX 600V
Low saturation voltage for higher efficiency.
ULTRA HIGH DC current gain hFE. hFE750
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
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QCA150BA60
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