Datasheet Q2006DH3 Datasheet (Teccor)

Page 1
查询Q2006DH3供应商
Selected Packages*
File #E71639
U.L. RECOGNIZED
E4
*TO-218
TO-263
2
D
Pak
*TO-220
TO-252
D-Pak
*TO-218X
General Description
This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.
All alternistors have glass-passivated junctions to ensure long­term reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination.
Teccor's TO-218X package is designed for heavy, steady power­handling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms
.
TO-251
V-Pak
MT2 MT1
G
(6 A to 40 A)
Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.
Features
High surge current capability
Glass-passivated junctions
2500 V ac isolation for L, J, and K Packages
High commutating dv/dt
High static dv/dt
©2002 Teccor Electronics E4 - 1 http://www.teccor.com Thyristor Product Catalog +1 972-580-7777
Page 2
Alternistor Triacs Data Sheets
I
T(RMS)
(4)(16)
Isolated Non-isolated
MT1
MT2
MT2
G
MT1
MT2
G
MT1
MT2
MT2
G
MT2
TO-251
T0-220 TO-220
V-Pak
MT1
TO-252
D-Pak
MT2
MT2
G
TO-263
2
D
Pak
MAX See “Package Dimensions” section for variations. (11) MIN MAX MAX
Q2006VH3 Q2006DH3 200 10 10 10 0.01 0.5 2
Q4006VH3 Q4006DH3 400 10 10 10 0.01 0.5 2
Q6006VH3 Q6006DH3 600 10 10 10 0.01 0.5 2
Q8006VH3 Q8006DH3 800 10 10 10 0.01 0.5 2
QK006VH3 QK006DH3 1000 10 10 10 0.02 2
Q2006VH4 Q2006DH4 200 35 35 35 0.01 0.5 2
6A
Q4006VH4 Q4006DH4 400 35 35 35 0.01 0.5 2
Q6006VH4 Q6006DH4 600 35 35 35 0.01 0.5 2
Q8006VH4 Q8006DH4 800 35 35 35 0.01 0.5 2
QK006VH4 QK006DH4 1000 35 35 35 0.02 2
Q2006LH4 Q2006RH4 Q2006NH4 200 35 35 35 0.01 0.5 2
Q4006LH4 Q4006RH4 Q4006NH4 400 35 35 35 0.01 0.5 2
Q6006LH4 Q6006RH4 Q6006NH4 600 35 35 35 0.01 0.5 2
Q8006LH4 Q8006RH4 Q8006NH4 800 35 35 35 0.01 0.5 2
QK006LH4 QK006RH4 QK006NH4 1000 35 35 35 0.02 3
Q2008VH3 Q2008DH3 200 10 10 10 0.01 0.5 2
Q4008VH3 Q4008DH3 400 10 10 10 0.01 0.5 2
Q6008VH3 Q6008DH3 600 10 10 10 0.01 0.5 2
Q8008VH3 Q8008DH3 800 10 10 10 0.01 0.5 2
QK008VH3 QK008DH3 1000 10 10 10 0.02 2
Q2008VH4 Q2008DH4 200 35 35 35 0.01 0.5 2
8A
Q4008VH4 Q4008DH4 400 35 35 35 0.01 0.5 2
Q6008VH4 Q6008DH4 600 35 35 35 0.01 0.5 2
Q8008VH4 Q8008DH4 800 35 35 35 0.01 0.5 2
QK008VH4 QK008DH4 1000 35 35 35 0.02 2
Q2008LH4 Q2008RH4 Q2008NH4 200 35 35 35 0.01 0.5 2
Q4008LH4 Q4008RH4 Q4008NH4 400 35 35 35 0.01 0.5 2
Q6008LH4 Q6008RH4 Q6008NH4 600 35 35 35 0.01 0.5 2
Q8008LH4 Q8008RH4 Q8008NH4 800 35 35 35 0.01 0.5 2
QK008LH4 QK008RH4 QK008NH4 1000 35 35 35 0.02 3
Q2010LH5 Q2010RH5 Q2010NH5 200 50 50 50 0.01 0.5 2
10 A
Q4010LH5 Q4010RH5 Q4010NH5 400 50 50 50 0.01 0.5 2
Q6010LH5 Q6010RH5 Q6010NH5 600 50 50 50 0.01 0.5 2
Q8010LH5 Q8010RH5 Q8010NH5 800 50 50 50 0.01 0.5 2
QK010LH5 QK010RH5 QK010NH5 1000 50 50 50 0.02 3
Q2012LH5 Q2012RH5 Q2012NH5 200 50 50 50 0.01 0.5 2
12 A
Q4012LH5 Q4012RH5 Q4012NH5 400 50 50 50 0.01 0.5 2
Q6012LH5 Q6012RH5 Q6012NH5 600 50 50 50 0.01 0.5 2
Q8012LH5 Q8012RH5 Q8012NH5 800 50 50 50 0.01 0.5 2
QK012LH5 QK012RH5 QK012NH5 1000 50 50 50 0.02 3
MT1
MT2
V
DRM
(1)
G
I
GT
(3) (7) (15) (17)
mAmps
T
Vol ts
QI QII QIII
C
25 °C
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
Part Number
I
DRM
(1) (18)
mAmps
=
TC =
100 °C
TC =
125 °C
http://www.teccor.com E4 - 2 ©2002 Teccor Electronics +1 972-580-7777 Thyristor Product Catalog
Page 3
Data Sheets Alternistor Triacs
V
GT
(2) (6)
(15) (17)
(20)
Vol ts
= 25 °C 60/50 Hz TC = 100 °C TC = 125 °C
T
C
MAX MAX MAX MIN MIN TYP
1.3 1.6 15 1.6 18 0.4 65/55 20 100 75 4 17.5 70
1.3 1.6 15 1.6 18 0.4 65/55 20 100 75 4 17.5 70
1.3 1.6 15 1.6 18 0.4 65/55 20 75 50 4 17.5 70
1.3 1.6 15 1.6 18 0.4 65/55 20 50 40 4 17.5 70
1.3 1.6 15 1.6 18 0.4 65/55 20 40 4 17.5 70
1.3 1.6 35 1.6 18 0.5 65/55 25 500 400 4 17.5 70
1.3 1.6 35 1.6 18 0.5 65/55 25 500 400 4 17.5 70
1.3 1.6 35 1.6 18 0.5 65/55 25 400 300 4 17.5 70
1.3 1.6 35 1.6 18 0.5 65/55 25 300 200 4 17.5 70
1.3 1.6 35 1.6 18 0.5 65/55 25 150 4 17.5 70
1.3 1.6 35 1.6 18 0.5 85/80 25 750 600 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70
1.3 1.6 15 1.6 18 0.4 85/80 20 100 75 4 30 70
1.3 1.6 15 1.6 18 0.4 85/80 20 100 75 4 30 70
1.3 1.6 15 1.6 18 0.4 85/80 20 75 50 4 30 70
1.3 1.6 15 1.6 18 0.4 85/80 20 50 40 4 30 70
1.3 1.6 15 1.6 18 0.4 85/80 20 40 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 750 400 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 575 450 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 425 350 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 300 250 4 30 70
1.3 1.6 35 1.6 18 0.5 85/80 25 150 4 30 70
1.3 1.6 35 2 20 0.5 100/83 25 500 400 4 41 70
1.3 1.6 35 2 20 0.5 100/83 25 500 400 4 41 70
1.3 1.6 35 2 20 0.5 100/83 25 400 300 4 41 70
1.3 1.6 35 2 20 0.5 100/83 25 300 200 4 41 70
1.3 1.6 35 2 20 0.5 100/83 25 150 4 41 70
1.3 1.6 50 2 20 0.5 120/110 30 11 50 1000 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 1150 1000 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 1000 750 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 850 650 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 650 500 4 60 70
1.3 1.6 50 2 20 0.5 120/110 30 300 4 60 70
V
TM
(1) (5)
Vol ts
I
H
(1) (8)
(12)
mAmps
I
GTMPGMPG(AV)
(14)
(14)
Amps
Watts Watts
I
TSM
(9) (13)
Amps
dv/dt(c) dv/dt
(1) (4) (13)
Volts/mSec
Volts/µSe c
(1)
t
gt
(10)
µSec Amps
I2t di/dt
2
Sec
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
(19)
Amps/µSec
©2002 Teccor Electronics E4 - 3 http://www.teccor.com Thyristor Product Catalog +1 972-580-7777
Page 4
Alternistor Triacs Data Sheets
I
T(RMS)
(4)(16)
MT1
T0-220
MT2
G
Isolated Non-isolated
A
A
K
G
A
K
G
A
MT1
MT2
MT2
MT2
G
TO-218
(16) TO-218X TO-220
MT1
TO-263
2
D
Pak
MT2
MAX See “Package Dimensions” section for variations. (11) MAX
Q2016LH3 Q2016RH3 Q2016NH3 200 20 20 20
Q4016LH3 Q4016RH3 Q4016NH3 400 20 20 20
Q6016LH3 Q6016RH3 Q6016NH3 600 20 20 20
Q8016LH3 Q8016RH3 Q8016NH3 800 20 20 20
QK016LH3 QK016RH3 QK016NH3 1000 20 20 20
Q2016LH4 Q2016RH4 Q2016NH4 200 35 35 35
Q4016LH4 Q4016RH4 Q4016NH4 400 35 35 35
16 A
Q6016LH4 Q6016RH4 Q6016NH4 600 35 35 35
Q8016LH4 Q8016RH4 Q8016NH4 800 35 35 35
QK016LH4 QK016RH4 QK016NH4 1000 35 35 35
Q2016LH6 Q2016RH6 Q2016NH6 200 80 80 80
Q4016LH6 Q4016RH6 Q4016NH6 400 80 80 80
Q6016LH6 Q6016RH6 Q6016NH6 600 80 80 80
Q8016LH6 Q8016RH6 Q8016NH6 800 80 80 80
QK016LH6 QK016RH6 QK016NH6 1000 80 80 80
Q2025L6 Q2025K6 Q2025J6 Q2025R6 Q2025NH6 200 80 80 80
25 A
Q4025L6 Q4025K6 Q4025J6 Q4025R6 Q4025NH6 400 80 80 80
Q6025L6 Q6025K6 Q6025J6 Q6025R6 Q6025NH6 600 80 80 80
Q8025L6 Q8025K6 Q8025J6 Q8025R6 Q8025NH6 800 80 80 80
QK025L6 QK025K6 QK025R6 QK025NH6 1000 80 80 80
Q2030LH5 200 50 50 50
30 A
Q4030LH5 400 50 50 50
Q6030LH5 600 50 50 50
Q2035RH5 Q2035NH5 200 50 50 50
35 A
Q4035RH5 Q4035NH5 400 50 50 50
Q6035RH5 Q6035NH5 600 50 50 50
Q2040K7 Q2040J7 200 100 100 100
Q4040K7 Q4040J7 400 100 100 100
40 A
Q6040K7 Q6040J7 600 100 100 100
Q8040K7 Q8040J7 800 100 100 100
QK040K7 1000 100 100 100
V
DRM
(1)
G
Vol ts
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
Part Number
I
GT
(3) (7) (15) (17)
mAmps
QI QII QIII
— Holding current (DC); gate open
I
Test Conditions
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V
and I
commutating di/dt = 0.54 rated I
T(RMS)
T(RMS)
unenergized
2
I
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
— Peak off-state current gate open; V
I
DRM
I
— DC gate trigger current in specific operating quadrants;
GT
= 12 V dc
V
D
— Peak gate trigger current
I
GTM
= maximum rated value
DRM
DRM
/ms; gate
gate open
DRM
H
— RMS on-state current conduction angle of 360°
I
T(RMS)
I
— Peak one-cycle surge
TSM
P
— Average gate power dissipation
G(AV)
— Peak gate power dissipation; I
P
GM
£ I
GT
GTM
tgt — Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time
V
— Repetitive peak blocking voltage
DRM
— DC gate trigger voltage; VD = 12 V dc
V
GT
V
— Peak on-state voltage at maximum rated RMS current
TM
http://www.teccor.com E4 - 4 ©2002 Teccor Electronics +1 972-580-7777 Thyristor Product Catalog
Page 5
Data Sheets Alternistor Triacs
I
DRM
(1) (18)
mAmps
T
=
TC =
C
25 °C
100 °C
0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 500 400 3 166 100
0.05 0.5 27 1.5 1.6 35 2 20 0.5 200/167 20 400 350 3 166 100
0.05 0.5 2 1.5 1.6 35 2 20 0.5 200/167 20 300 250 3 166 100
0.1 1 3 1.5 1.6 35 2 20 0.5 200/167 20 275 200 3 166 100
0.1 3 1.5 1.6 35 2 20 0.5 200/167 20 200 3 166 100
0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 650 500 3 166 100
0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 600 475 3 166 100
0.05 0.5 2 2 1.6 50 2 20 0.5 200/167 25 500 400 3 166 100
0.1 1 3 2 1.6 50 2 20 0.5 200/167 25 425 350 3 166 100
0.1 3 2 1.6 50 2 20 0.5 200/167 25 300 3 166 100
0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 875 600 5 166 100
0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 875 600 5 166 100
0.05 0.5 2 2.5 1.6 70 2 20 0.5 200/167 30 800 520 5 166 100
0.1 1 3 2.5 1.6 70 2 20 0.5 200/167 30 700 475 5 166 100
0.1 3 2.5 1.6 70 2 20 0.5 200/167 30 350 5 166 100
0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 875 600 5 259 100
0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 875 600 5 259 100
0.05 0.5 2 2.5 1.8 100 2 20 0.5 250/208 30 800 520 5 259 100
0.1 1 3 2.5 1.8 100 2 20 0.5 250/208 30 700 475 5 259 100
0.1 3 2.5 1.8 100 2 20 0.5 250/208 30 400 5 259 100
0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 650 500 3 508 100
0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 600 475 3 508 100
0.05 0.5 2 2 1.4 75 2 20 0.5 350/290 20 500 400 3 508 100
0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 650 500 3 508 100
0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 600 475 3 508 100
0.05 0.5 2 2 1.5 75 2 20 0.5 350/290 20 500 400 3 508 100
0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 1100 700 5 664 150
0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 1100 700 5 664 150
0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 1000 625 5 664 150
0.2 2 5 2.5 1.8 120 4 40 0.8 400/335 50 900 575 5 664 150
0.2 5 2.5 1.8 120 4 40 0.8 400/335 50 500 5 664 150
TC =
125 °C
MAX MAX MAX MAX MIN MIN TYP
V
GT
(2) (6)
(15) (17)
(20)
Volts
TC =
25 °C
V
TMIH
(1) (5)
(1) (8)
Volts
TC =
mAmps
25 °C 60/50 Hz
(12)
I
GTM
(14)
Amps
P
Watts Watts
GM
(14)
P
G(AV)
I
TSM
(9) (13)
Amps
dv/dt(c) dv/dt
(1) (4) (13)
Volts /µ Sec
(1)
Volts/mSec
TC =
100 °C
TC =
125 °C
t
gt
(10)
µSec Amps
I2t di/dt
(19)
2
Sec
Amps/µSec
General Notes
All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless specified otherwise.
Operating temperature range (T
Storage temperature range (T
Lead solder temperature is a maximum of 230 °C for 10 seconds maximum ³1/16" (1.59 mm) from case.
The case temperature (T sional outline drawings. See “Package Dimensions” section.
) is -40 °C to +125 °C.
J
) is -40 °C to +125 °C.
S
) is measured as shown in the dimen-
C
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1 terminal
(2) For either polarity of gate voltage (V
terminal
(3) See Gate Characteristics and Definition of Quadrants.
(4) See Figure E4.1 through Figure E4.4 for current rating at specific
operating temperature and Figure 4.16 for free air rating (no heat sink).
(5) See Figure E4.5 and Figure E4.6 for i
(6) See Figure E4.7 for V
(7) See Figure E4.8 for I
(8) See Figure E4.9 for
versus TC.
GT
versus TC.
GT
IH versus TC.
) with reference to MT1
GT
and vT.
T
(9) See Figure E4.10 and Figure E4.11 for surge rating with specific
durations.
©2002 Teccor Electronics E4 - 5 http://www.teccor.com Thyristor Product Catalog +1 972-580-7777
Page 6
Alternistor Triacs Data Sheets
(10) See Figure E4.12 for tgt versus IGT.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) Initial on-state current = 400 mA dc for 16 A to 40 A devices and
100 mA for 6 A to 12 A devices.
(13) See Figure E4.1 through Figure E4.4 for maximum allowable case
temperature at maximum rated current.
(14) Pulse width £10 µs;
IGT £ I
GTM
(15) For 6 A to 12 A devices, RL = 60 W; 16 A and above, RL = 30 W
(16) 40 A pin terminal leads on K package can run 100 °C to 125 °C.
(17) Alternistor does not turn on in Quadrant IV.
= T
(18) T
(19) I
for test conditions in off state
C
J
= 200 mA for 6 A to 12 A devices and 500 mA for 16 A to 40 A
GT
devices with gate pulse having rise time of £0.1 µs.
(20) Minimum non-trigger V
at 125 °C is 0.2 V.
GT
I
GT
ALL POLARITIES ARE REFERENCED TO MT1
MT2 POSITIVE
(Positive Half Cycle)
MT2
(-)
I
GT
GATE
MT1
-
(-)
REF
MT2
I
GT
GATE
MT1
REF
NOTE: Alternistors will not operate in QIV
+
QII
QI QIV
QIII
-
MT2 NEGATIVE
(Negative Half Cycle)
MT2
(+)
I
GT
GATE
MT1
REF
+ I
MT2
(+)
I
GT
GATE
REF
GT
MT1
Gate Characteristics
Teccor triacs may be turned on in the following ways:
In-phase signals (with standard AC line) using Quadrants I and III
Application of unipolar pulses (gate always negative), using Quadrants II and III with negative gate pulses
In all cases, if maximum surge capability is required, gate pulses should be a minimum of one magnitude above minimum I
rating
GT
with a steep rising waveform (£1 µs rise time).
If QIV and QI operation is required (gate always positive), see Figure AN1002.8, “Amplified Gate” Thyristor Circuit.
Definition of Quadrants
Electrical Isolation
Teccor’s isolated alternistor packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab, over the operating temperature range of the device. The following iso­lation table shows standard and optional isolation ratings.
Electrical Isolation
from Leads to Mounting Tab *
VACRMS
2500 4000
TO-218
Isolated
Standard Standard Standard
N/A Optional ** N/A
* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.
TO-220
Isolated
TO-218X
Isolated
Thermal Resistance (Steady State)
R
Package Code KJLRDVN
Typ e
TO-218
Isolated *
6 A 3.3 [50] 1.80 [45] 2.1 2.3 [64] 1.80
8 A 2.8 1.50 1.8 2.1 1.50 10 A 2.6 1.30 1.30 12 A 2.3 1.20 1.20 16 A 2.1 1.10 1.10 25 A 1.35 1.32 2.0 0.87 0.87 30 A 2.3 35 A 0.85 40 A 0.97 0.95
TO-218X Isolated *
q JC [R q JA
TO-220
Isolated **
] (TYP.) °C/W
Non-Isolated
TO-220
TO-252
D-Pak
TO-251
V-Pak
TO-263
2
Pak
D
* UL Recognized Product per UL File E71639 ** For 4000 V isolation, use V suffix in part number.
http://www.teccor.com E4 - 6 ©2002 Teccor Electronics +1 972-580-7777 Thyristor Product Catalog
Page 7
Data Sheets Alternistor Triacs
C
130
˚
) -
C
120
110
100
90
80
70
60
0
Maximum Allowable Case Temperature (T
6A TO-220
(NON-ISOLATED)
AND D
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing
02468101214
RMS On-State Current [l
10A TO-220 (NON-ISOLATED)
2
AND D
PAK
2
PAK
6A TO-220 (ISOLATED)
12A TO-220 (ISOLATED)
˚
T(RMS)
] - AMPS
130
120
) – ˚C
C
110
100
25 A and 30 A TO-220 (Isolated)
90
80
25 A TO-220 (Non-isolated)
70
60
Maximum Allowable Case Temperature (T
50
TO-218 (Isolated)
TO-263
0 1020304050
RMS On-state Current [l
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing
35 A TO-220 (Non-isolated) and TO-263
40 A TO-218 (Isolated)
25
] – Amps
T(RMS)
Figure E4.1 Maximum Allowable Case Temperature versus
On-state Current (6 A to 12 A)
130
120
110
) – ˚C
100
C
8 A TO-220 (Isolated)
90
80
70
Temperature (T
Maximum Allowable Case
60
0
8 A TO-220 (Non-isolated), TO-263, TO-251, and TO-252
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing
02468101214
RMS On-state Current [l
12 A TO-220 (Non-isolated) and TO-263
10 A TO-220 (Isolated)
] – Amps
T(RMS)
Figure E4.2 Maximum Allowable Case Temperature versus
On-state Current (8 A to 12 A)
130
120
C
˚
110
) –
C
100
90
80
CURRENT WAVEFORM: Sinusoidal
70
Maximum Allowable
LOAD: Resistive or Inductive CONDUCTION ANGLE: 360
60
Case Temperature (T
CASE TEMPERATURE: Measured as shown on Dimensional Drawing
0
0 5 10 15
RMS On-state Current [I
16A TO-220 (Non-isolated) and TO-263
16A TO-220 (Isolated)
˚
] – Amps
T(RMS)
Figure E4.4 Maximum Allowable Case Temperature versus
On-state Current (25 A to 40 A)
20
18
= 25 ˚C
T
C
16
14
) – Amps
12
T
6 A to 12 A Devices
10
8
6
On-state Current (i
4
Positive or Negative Instantaneous
2
0
0 0.6
0.8
1.0 1.2 1.4
Positive or Negative Instantaneous
On-state Voltage (v
) – Volts
T
1.6
Figure E4.5 On-state Current versus On-state Voltage (Typical)
(6 A to 12 A)
90
80
70
60
) – Amps
T
50
40
30
On-state Current (i
Positive or Negative Instantaneous
20
10
0
0
TC = 25˚C
40 A Devices
25 A to 35 A Devices
16 A Devices
0.6
Positive or Negative Instantaneous On-state Voltage (vT) – Volts
1.0
0.8
1.4
1.2
1.6
1.8
Figure E4.3 Maximum Allowable Case Temperature versus
On-state Current (16 A)
Figure E4.6 On-state Current versus On-state Voltage (Typical)
(16 A to 40 A)
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Alternistor Triacs Data Sheets
2.0
1.5
= 25 ˚C)
GT
C
V
(T
1.0
GT
V
.5
Ratio of
0
-65 -15 +65+25 +125-40
Case Temperature (TC) – ˚C
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
4.0
3.0
= 25 ˚C)
GT
I
C
(T
2.0
GT
I
1.0
Ratio of
0
-40
-65 -15 +65+25 +125
Case Temperature (TC) – ˚C
200
120 100
80
60 50 40
) – Amps
30
TSM
20
10
8 6
5 4
3
Peak Surge (Non-Repetitive)
On-state Current (I
2
1
1
10 A to 12 A Devices
8 A TO-251
and TO-252
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I Rated Value at Specified Case Temperature
6 A Devices
8
45
6
3
2
8 A Devices
T(RMS)
10
6 A TO-251
and TO-252
]: Maximum
20
30
60
80
40
Notes:
1) Gate control may be lost during and immediately following surge current interval
2) Overload may not be repeated until junction temperature has returned to steady state rated value.
100
300
200
600
Surge Current Duration – Full Cycles
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
1000
400
300
) – Amps
250 200
TSM
100
80
30 A Devices
60 50
40
Notes:
1) Gate control may be lost during and
30
immediately following surge current
Peak Surge (Non-repetitive)
interval.
20
2) Overload may not be repeated until
On-state Current (I
junction temperature has returned to steady-state rated value.
10
110
SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I Rated Value at Specified Case Temperature
T(RMS)
]: Maximum
40 A Devices
35 A Devices
25 A Devices
16 A Devices
100 1000
Surge Current Duration – Full Cycles
1000
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
4.0
INITIAL ON-STATE CURRENT = 400 mA dc 16 A to 40 A Devices = 100 mA dc 6 to 12A Devices
H
I
3.0
= 25 ˚C)
C
2.0
(T
H
I
1.0
Ratio of
0
-65 -15 +65+25 +125-40
Case Temperature (TC) – ˚C
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
10
) – µs
Time (t
Typical Turn-on
8
6
gt
4
IGT = 50 mA
2
0
0
100
DC Gate Trigger Current (
IGT = 80 to 100 mA
IGT = 10 mA to 35 mA
200
300
I
400 500
) – mA
GT
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
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Page 9
Data Sheets Alternistor Triacs
6
0
18
16
14
12
] – Watts
10
D(AV)
8
6
4
Average On-state Power
Dissipation [P
2
0
01234567891011121314151
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360
RMS On-state Curren
6A to 12A Devices
t [l
] – AmpsS
T(RMS)
˚
Figure E4.13 Power Dissipation (Typical) versus On-state Current
(6 A to 12 A)
18
CURRENT WAVEFORM: Sinusoidal
16
LOAD: Resistive or inductive CONDUCTION ANGLE: 360˚
14
12
] – Watts
10
D (AV)
8
16A Devices
6
4
Average On-state Power
Dissipation [P
2
0
0246
RMS On-state Current [I
8
10 12
T(RMS)
14
] – Amps
16
Figure E4.14 Power Dissipation (Typical) versus On-state Current
(16 A)
120
) – ˚C
A
100
80
60
TO-251 Devices
40
25
Maximum Allowable Ambient Temperature (T
20
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.
RMS On-state Current [I
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING – NO HEATSINK
TO-220 Devices
] – Amps
T (RMS)
˚
Figure E4.16 Maximum Allowable Ambient Temperature versus
On-state Current
45
Current Waveform: Sinusoidal
40
Load: Resistive or Inductive Conduction Angle: 360˚
35
30
]—Watts
25
D(AV)
20
25 A
30 A and
35 A Devices
40 A
15
10
Average On-State Power
5
Dissipation [P
0
012
4
8
RMS On-State Current [I
20 28 36
16 24 32 40
]—Amps
T(RMS)
Figure E4.15 Power Dissipation (Typical) versus On-state Current
(25 A to 40 A)
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Notes
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