Page 1
1
Base
3
Emitter
4
559A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT559A is designed for general purpose switching
and amplifier applications.
FEATURES
4 Amps continuous current, up to 10 Amps peak current.
Excellent gain characteristic specified up to 3 Amps
Very low saturation voltages
MARKING
Date code
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-223 2.5K 13’ inch
PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
REF.
A 6.30 6.70 G 0.02 0.10
B 6.70 7.30 H 1.50 2.00
C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K 0.85 1.05
E 4.60 REF. L 2.30 REF.
F 0.60 0.80 M 2.90 3.10
I 0.02 0.10 N 13 TYP.
O
Millimeter
Min. Max. Min. Max.
0° 10°
SOT-223
REF.
Collector
2
Millimeter
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) IC -4
Collector Current (Pulse) ICM -10 A
Total Power Dissipation 1
Total Power Dissipation 2 1.6 W
Junction, Storage Temperature TJ, T
Notes：
1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.
2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.
(TA = 25°C unless otherwise noted)
-180 V
CBO
-140 V
CEO
-7 V
EBO
PD
+150, -55~150 ℃
STG
A
3 W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A Page 1 of 4
Page 2
VCE= -10
V, IC= -100mA,
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
Silicon Planar Medium Power Transistor
(TA=25 °C unless otherwise specified)
PZT559A
PNP Silicon
Parameter Symbol Min. Typ. Max. Unit
Collector - Base Breakdown Voltage
Increased Operating Voltage BV
Collector - Emitter Breakdown
Voltage
Emitter - Base Breakdown Voltage BV
Collector Cut - Off Current I
I
Emitter Cut - Off Current I
Collector - Emitter Saturation Voltage
Base - Emitter Voltage
DC Current Gain
BV
BV
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
V
V
*h
*h
*h
*h
Test Conditions
-180
CBO
-180
CER
-140
CEO
-7 - - V IE= -100uA, IC=0
EBO
- - -20 nA VCB= -150V, IE=0
CBO
- - -20 nA V
CER
- - -10 nA VEB= -6V, IC=0
EBO
- -40 -60 mV IC= -100mA, IB= -5mA
- -55 -80 mV IC= -500mA, IB= -50mA
- -85 -120 mV IC= -1A, IB= -100mA
- -250 -360 mV IC= -3A, IB= -300mA
- -940 -1.04
BE(sat)
- -830 -0.93
BE(on)
100 225 -
FE1
100 200 300 VCE= -5V, IC = -1A
FE2
45 80 - VCE= -5V, IC = -3A
FE3
- 5 - VCE= -5V, IC = -10A
FE4
- - V IC= -100uA, IE=0
- - V IC= -1uA, RB≦1KΩ
- - V IC= -10mA, IB=0
= -150V, R≦1KΩ
CB
V IC= -3A, IB= -300mA
V VCE= -5V, IC= -3A
VCE= -5V, IC= -10 mA
Transition Frequency fT - 120 - MHz
f=50 MHz
Collector Output Capacitance COB - 33 - pF VCB= -10 V, f=1 MHz
Switching Time
Turn-on Ton - 42 Turn-off T
- 636 -
off
VCC= -50V, IC = -1A,
nS
IB1= -I
= -100mA
B2
*Measured under pulsed condition. Pulse width = 300 us, Duty cycle ≦ 2 %
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A Page 4 of 4
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