Datasheet PZM10NB1, PZM10NB2, PZM12NB1, PZM12NB2, PZM15NB2 Datasheet (Philips)

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Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D114
PZM-N series
Voltage regulator diodes
Product specification Supersedes data of 1997 Dec 15
1999 Jan 28
Page 2
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
FEATURES
• Total power dissipation: max. 300 mW
• Small plastic package suitable for surface mounted design
PINNING
PIN DESCRIPTION
1 anode 2 not connected 3 cathode
• Wide working voltage range: nom. 2.4 to 75 V (E24 range).
handbook, halfpage
APPLICATIONS
• General regulation functions.
3
2
n.c.
1
DESCRIPTION
Low power general purpose voltage regulator diode in a SOT346 (SC59) plastic package, suitable for surface
Top view
21
MAM378
3
mounted design.
Fig.1 Simplified outline (SOT346; SC59) and symbol.
MARKING
TYPE
NUMBER
MARKING CODE
B B1 B2 B3 B B1 B2 B3
TYPE
NUMBER
MARKING CODE
PZM2.4N 2V4 −−−PZM15N 15V 151 152 153 PZM2.7N 2V7 271 272 − PZM16N 16V 161 162 163 PZM3.0N 3V0 301 302 − PZM18N 18V 181 182 183 PZM3.3N 3V3 331 332 − PZM20N 20V 201 202 203 PZM3.6N 3V6 361 362 − PZM22N 22V 221 222 223 PZM3.9N 3V9 391 392 − PZM24N 24V 241 242 243 PZM4.3N 4V3 431 432 433 PZM27N 27V −−− PZM4.7N 4V7 471 472 473 PZM30N 30V −−− PZM5.1N 5V1 511 512 513 PZM33N 33V −−− PZM5.6N 5V6 561 562 563 PZM36N 36V −−− PZM6.2N 6V2 621 622 623 PZM39N 39V −−− PZM6.8N 6V8 681 682 683 PZM43N 43V −−− PZM7.5N 7V5 751 752 753 PZM47N 47V −−− PZM8.2N 8V2 821 822 823 PZM51N 51V −−− PZM9.1N 9V1 911 912 913 PZM56N 56V −−−
PZM10N 10V 101 102 103 PZM62N 62V −−− PZM11N 11V 111 112 113 PZM68N 68V −−− PZM12N 12V 121 122 123 PZM75N 75V −−− PZM13N 13V 131 132 133 − −−−−
1999 Jan 28 2
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Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
T
stg
T
j
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
continuous forward current − 250 mA non-repetitive peak current tp= 100 µs; square wave;
T
=25°C prior to surge
amb
total power dissipation T
=25°C − 300 mW
amb
see Tables 1 and 2
storage temperature −65 +150 °C operating junction temperature − 150 °C
thermal resistance from junction to soldering point Ts=60°C 300 K/W
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF= 10 mA; see Fig.2 0.9 V
I
= 100 mA; see Fig.2 1.1 V
F
reverse current PZM2.4N V PZM2.7N V PZM3.0N V PZM3.3N V PZM3.6N V PZM3.9N V PZM4.3N V PZM4.7N V PZM5.1N V PZM5.6N V PZM6.2N V PZM6.8N V PZM7.5N V PZM8.2N V PZM9.1N V PZM10N V PZM11N V PZM12N V PZM13N V PZM15N V PZM16N V
=1V 50 µA
R
=1V 20 µA
R
=1V 10 µA
R
=1V 5 µA
R
=1V 5 µA
R
=1V 3 µA
R
=1V 3 µA
R
=1V 3 µA
R
= 1.5 V 3 µA
R
= 2.5 V 2 µA
R
= 3.0 V 2 µA
R
= 3.5 V 2 µA
R
= 4.0 V 1 µA
R
= 5.0 V 700 nA
R
= 6.0 V 500 nA
R
= 7.0 V 200 nA
R
= 8.0 V 100 nA
R
= 9.0 V 100 nA
R
= 10.0 V 100 nA
R
= 11.0 V 70 nA
R
= 12.0 V 70 nA
R
1999 Jan 28 3
Page 4
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
R
reverse current PZM18N V PZM20N V PZM22N V PZM24N V PZM27N V PZM30N V PZM33N V PZM36N V PZM39N V PZM43N V PZM47N V PZM51N V PZM56N V PZM62N V PZM68N V PZM75N V
= 13.0 V 70 nA
R
= 15.0 V 70 nA
R
= 17.0 V 70 nA
R
= 19.0 V 70 nA
R
= 21.0 V 70 nA
R
= 23.0 V 70 nA
R
= 25.0 V 70 nA
R
= 27.0 V 70 nA
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
= 0.7 V
R
Znom Znom Znom Znom Znom Znom Znom Znom
50 nA 50 nA 50 nA 50 nA 50 nA 50 nA 50 nA 50 nA
1999 Jan 28 4
Page 5
1999 Jan 28 5
Table 1 Per type; PZM2.4N to PZM24N
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
PZM
-XXX
WORKING VOLTAGE
(V)
V
Z
at IZ= 5 mA; tm=40ms
B B1B2B3I
DIFFERENTIAL
RESISTANCE
r
dif
=1mA IZ=5mA
Z
(Ω)
TEMP.
COEFF.
SZ(mV/K)
at
IZ=5mA
DIODE
CAP.
Cd(pF)
at
f = 1 MHz;
VR=0
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
at tp= 100 µs;
T
amb
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2.4N 2.30 2.60 −−−−−−275 400 70 100 −1.6 450 8.00
2.7N 2.50 2.90 2.50 2.75 2.65 2.90 −−300 450 75 100 −2.0 440 8.00
3.0N 2.80 3.20 2.80 3.05 2.95 3.20 −−325 500 80 95 −2.1 425 8.00
3.3N 3.10 3.50 3.10 3.35 3.25 3.50 −−350 500 85 95 −2.4 410 8.00
3.6N 3.40 3.80 3.40 3.65 3.55 3.80 −−375 500 85 90 −2.4 390 8.00
3.9N 3.70 4.10 3.70 3.97 3.87 4.10 −−400 500 85 90 −2.5 370 8.00
4.3N 4.01 4.48 4.01 4.21 4.15 4.34 4.28 4.48 410 600 80 90 −2.5 350 8.00
4.7N 4.42 4.90 4.42 4.61 4.55 4.75 4.69 4.90 425 500 50 80 −1.4 325 8.00
5.1N 4.84 5.37 4.84 5.04 4.98 5.20 5.14 5.37 400 480 40 60 −0.8 300 8.00
5.6N 5.31 5.92 5.31 5.55 5.49 5.73 5.67 5.92 80 400 15 40 1.2 275 8.00
6.2N 5.86 6.53 5.86 6.12 6.06 6.33 6.26 6.53 40 150 6 10 2.3 250 8.00
6.8N 6.47 7.14 6.47 6.73 6.65 6.93 6.86 7.14 30 80 6 15 3.0 215 8.00
7.5N 7.06 7.84 7.06 7.36 7.28 7.60 7.52 7.84 15 80 2 10 4.0 170 3.50
8.2N 7.76 8.64 7.76 8.10 8.02 8.36 8.28 8.64 20 80 2 10 4.6 150 3.50
9.1N 8.56 9.55 8.56 8.93 8.85 9.23 9.15 9.55 20 100 2 10 5.5 120 3.50 10N 9.45 10.55 9.45 9.87 9.77 10.21 10.11 10.55 20 150 2 10 6.4 110 3.50 11N 10.44 11.56 10.44 10.88 10.76 11.22 11.10 11.56 25 150 2 10 7.4 108 3.00 12N 11.42 12.60 11.42 11.90 11.74 12.24 12.08 12.60 25 150 2 10 8.4 105 3.00 13N 12.47 13.96 12.47 13.03 12.91 13.49 13.37 13.96 25 170 2 10 9.4 103 2.50 15N 13.84 15.52 13.84 14.46 14.34 14.98 14.85 15.52 25 200 3 15 11.4 99 2.00 16N 15.37 17.09 15.37 16.01 15.85 16.51 16.35 17.09 25 200 4 20 12.4 97 1.50 18N 16.94 19.03 16.94 17.70 17.56 18.35 18.21 19.03 25 225 4 20 14.4 93 1.50 20N 18.86 21.08 18.86 19.70 19.52 20.39 20.21 21.08 30 225 4 20 16.4 88 1.50 22N 20.88 23.17 20.88 21.77 21.54 22.47 22.23 23.17 30 250 5 25 18.4 84 1.25 24N 22.93 25.57 22.93 23.96 23.72 24.78 24.54 25.57 30 250 6 30 20.4 80 1.25
(A)
=25°C
Page 6
1999 Jan 28 6
Table 2 Per type; PZM27N to PZM75N
=25°C unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
PZM
-XXX
WORKING VOLTAGE
(V)
V
Z
at IZ= 2 mA; tm=40ms
B B1B2B3I
DIFFERENTIAL
RESISTANCE
r
dif
= 0.5 mA IZ=2mA
Z
(Ω)
TEMP.
COEFF.
SZ(mV/K)
at
IZ=2mA
DIODE
CAP.
Cd(pF)
at
f = 1 MHz;
VR=0
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
at tp= 100 µs;
T
amb
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
27N 25.10 28.90 −−−−−−35 250 8 40 23.4 73 1.00 30N 28.00 32.00 −−−−−−35 250 10 40 26.6 66 1.00 33N 31.00 35.00 −−−−−−40 275 11 40 29.7 60 0.90 36N 34.00 38.00 −−−−−−40 300 15 60 33.0 59 0.80 39N 37.00 41.00 −−−−−−40 300 25 75 36.4 58 0.70 43N 40.00 46.00 −−−−−−45 325 30 80 41.2 56 0.60 47N 44.00 50.00 −−−−−−45 325 30 90 46.1 55 0.50 51N 48.00 54.00 −−−−−−45 350 35 110 51.0 52 0.40 56N 52.00 60.00 −−−−−−50 375 40 120 57.0 49 0.30 62N 58.00 66.00 −−−−−−60 400 50 140 64.4 44 0.30 68N 64.00 72.00 −−−−−−75 400 55 160 71.7 40 0.25 75N 70.00 79.00 −−−−−−85 400 70 175 80.2 35 0.20
(A)
=25°C
Page 7
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
GRAPHICAL DATA
300
handbook, halfpage
I
F
(mA)
200
100
0
0.6 1.0
Tj=25°C.
Fig.2 Forward current as a function of
MBG781
0.8
VF (V)
forward voltage; typical values.
handbook, halfpage
0
S
Z
(mV/K)
−1
−2
−3
060
PZM2.4N to PZM4.3N.
Tj=25°Cto150°C.
20 40
4V3
3V9
3V6
3V3
2V4 2V7
IZ (mA)
Fig.3 Temperature coefficient as a function of
working current; typical values.
MBG783
3V0
10
handbook, halfpage
S
Z
(mV/K)
5
0
−5 02016
PZM4.7N to PZM12N.
Tj=25°Cto150°C.
4812
12 11
10 9V1 8V2
7V5 6V8
6V2 5V6 5V1
4V7
I
Fig.4 Temperature coefficient as a function of
working current; typical values.
MBG782
(mA)
Z
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Tj (°C)
Fig.5 Power derating curve.
MBK204
1999 Jan 28 7
Page 8
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT346
D
B
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
A
X
v
M
A
Q
c
L
p
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
1.3
1.0
A
b
A
1
0.1
0.50
0.013
0.35
cD
p
0.26
0.10
IEC JEDEC EIAJ
3.1
2.7
E
1.7
1.3
REFERENCES
1.9
e
e
1
0.95
UNIT
mm
OUTLINE
VERSION
SOT346 TO-236 SC-59
1999 Jan 28 8
H
3.0
2.5
L
Qwv
p
E
0.33
0.6
0.2
0.23
0.2
0.2
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 9
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jan 28 9
Page 10
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
NOTES
1999 Jan 28 10
Page 11
Philips Semiconductors Product specification
Voltage regulator diodes PZM-N series
NOTES
1999 Jan 28 11
Page 12
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Printed in The Netherlands 115002/00/02/pp12 Date of release: 1999 Jan 28 Document order number: 9397 750 04983
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