Datasheet PTF10160 Datasheet (Ericsson)

PTF 10160 85 Watts, 860–960 MHz

GOLDMOS® Field Effect Transistor

Description

The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

Typical Output Pow er& Efficiency vs. Input Pow er

120

100

80

60

40

20

Output Power (Watts)

Output Power

0

012345

Input Power (Watts)

VDD = 26 V I

f = 960 MHz

= 700 mA

DQ

Efficiency

70 60 50 40 30

Efficiency (%)

20 10 0

• INTERNALLY MATCHED

• Performance at 960 MHz, 26 Volts

- Output Power = 85 Watts

- Power Gain = 16 dB Typ

- Efficiency = 53% Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Excellent Thermal Stability

• 100% Lot Traceability

10160

1234560055A

Package 20248

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V —all phase angles at frequency of test)

All published data at T

= 26 V, P

DD

= 26 V, IDQ = 700 mA, f = 960 MHz) P-1dB 85 90 — Watts

DD

= 26 V, P

DD

= 26 V, P

DD

= 85 W, IDQ = 700 mA, f = 960 MHz) G

OUT

= 85 W, IDQ = 700 mA, f = 960 MHz) h 50 53 — %

OUT

= 85 W, IDQ = 700 mA, f = 960 MHz Y — — 5:1 —

OUT

= 25°C unless otherwise indicated.

CASE

pe

15 16 — dB

e

1

PTF 10160

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V

(BR)DSS

Drain-Source Leakage Current VDS = 26 V, VGS = 0 V I Gate Threshold Voltage VDS = 10 V, ID = 75 mA V Forward Transconductance VDS = 10 V, ID = 3 A g

DSS

GS(th)

fs

65 ——Volts ——1.0 mA

3.0 — 5.0 Volts — 3.0 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V Gate-Source Voltage V Operating Junction Temperature T Total Device Dissipation P

DSS

GS

J D

Above 25°C derate by 1.18 W/°C Storage Temperature Range T

Thermal Resistance (T

= 70°C) R

CASE

STG

qJC

65 Vdc ±20 Vdc 200 °C 205 Watts

–40 to +150 °C

0.85 °C/W

Typical Performance

Typical P

, Gain & Efficiency

OUT

vs. Frequency

18 17 16 15

Gain (dB)

14

Gain

13 12 11 10

860 880 900 920 940 960

Frequency (MHz)

Outp ut Power (W)

VDD = 26.0 V

= 700 mA

I

DQ

Efficiency (%)

(at P-1dB)

110 100 90 80 70 60 50

Output Power & Efficiency

Broadband Test Fixture Performance

20

Efficiency (%)

16

Gain

12

Gain (dB)

8

4

860 865 870 875 880 885 890 895 900

VDD = 26 V

= 700 mA

I

DQ

= 85 W

P

OUT

Frequency (MHz)

Return Loss

60

50

40

Efficiency (%)

0

30

- 5

20

-15

10

-20

0

Return Loss (dB)

2

e

PTF 10160

Broadband Test Fixture Performance

20

Efficiency (%)

16

Gain

12

Gain (dB)

8

4

920 925 930 935 940 945 950 955 960

VDD = 26 V

= 700 mA

I

DQ

= 85 W

P

OUT

Return Loss

Frequency (MHz)

Output Power vs. Supply Voltage

100

90

80

70

60

50

Output Power (Watts)

40

22 24 26 28 30 32

Supply Voltage (Volts)

IDQ = 700 mA f = 960 MHz

60

50

40

Efficiency (%)

30

- 5

20

-15

10

-25

0

-35

Return Loss (dB)

17

IDQ = 700 mA

16

IDQ = 400 m

IDQ = 350 mA

15

IDQ = 175 mA

Power Gain (dB)

14

VDD = 28 V f = 960 MHz

13

1 10 100 1000

Output Power (Watts)

Inter modulation Distortion vs. Output Power

(as measured in a broadband circuit)

-10

Power Gain vs. Output Power

VDD = 26 V, I

-20

-30

-40

IMD (dBc)

-50

-60

= 960 MHz, f2 = 960.1 MHz

f

1

020406080100

Output Power (Watts-PEP)

= 700 mA

DQ

3rd Order

5th

7th

Capacitance vs. V oltage *

300

250

200

150

100

Cds and Cgs (pF)

50

0

0 10203040

C

gs

C

ds

Supply Voltage (Volts)

* This part is internally matched. Measurements of the finished product will not yield these figures.

VGS = 0 V f = 1 MHz

C

rss

25

20

15

10

5

0

Crss (pF)

3

Bias Voltage vs. Temper ature

1.03

1.02

1.01

1.00

0.99

0.98

Bias Voltage (V)

0.97

0.96

-20 30 80 130

Voltage normalized to 1.0 V Series show current (A)

Temp. (°C)

0.86

2.5

4.16

5.8

7.42

9.06

PTF 10160

e

Spectrum Due to Modulation (Edge Modulation)

Without correction circuit

200 kHz = -36 dBc 400 kHz = -57 dBc 600 kHz = -70 dBc

4

e

Impedance Data

PTF 10160

VDD = 26 V, P

= 85 W, IDQ = 700 mA

OUT

D

Z Source Z Load

G

S

Frequency Z Source W Z Load W

MHz R jX R jX

860 2.1 -1.5 2.6 1.1 880 2.6 -1.6 2.6 1.3 900 3 -1.7 2.6 1.5 920 4.1 -1.7 2.4 1.5 940 6.3 -1.5 2.3 1.65 960 7.1 1.5 2.2 1.8

Test Circuit

Z0 = 50 W

Test Circuit Schematic for f = 921 to 960 MHz

DUT PTF 10160 LDMOS Transistor

l1, l9 0.037 l Microstrip 50 W l2 0.120 l Microstrip 50 W l3 0.080 l Microstrip 50 W l4 0.187 l Microstrip 9.29 W l5 0.204 l Microstrip 6.98 W l6 0.250 l Microstrip 77.9 W l7 0.031 l Microstrip 50 W l8 0.157 l Microstrip 50 W l1, l9 0.037 l Microstrip 50 W

C1, C3, C4, C8 100 B Capacitor, 36 pF C2 100 B Capacitor, 2.7 pF C5 Digi-Key P4525-ND Capacitor, 0.1 µF, 50 V C6 Digi-Key P5182-ND Capacitor, 100 µF, 50 V C7 ATC 100 B Capacitor, 3.3 pF J1, J2 SMA Panel Mount Female Connector R1, R2, R3 220 W Resistor, Digi-Key 1K QBK

Circuit Board .031" Thickness,

AlliedSignal, G200, 2 oz. copper

5

e

r

= 4.0,

PTF 10160

Components Layout (not to scale)

e

10160

Artwork (not to scale)

ERICSSON

10160_A OUTPUT

6

e

Case Outline Specifications

PTF 10160

Package 20248

Primary dimensions are inches; alternate dimensions are mm.

Ericsson Inc. Microelectronics

Morgan Hill, CA 95037 USA

1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower

7

Datasheet PTF10160 Datasheet (Ericsson)

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