Datasheet PTF10137 Datasheet (Ericsson)

PTF 10137
12 Watts, 1.0 GHz

GOLDMOS

™

Field Effect T ransistor

Description

The PTF 10137 is a 12 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 60% efficiency with
18 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.

Typical Output Pow er & Efficiency vs. Input Power

20

Efficiency (%)

15

VDD = 28 V

10

5

Output Power (Watts)

0

0.0 0.2 0.4 0.6

Outp ut P ower (W)

Input Power (Wa tts)

= 160 mA

I

DQ

f = 960 MHz

80

60

40

20

0

Efficiency

• Performance at 960 MHz, 28 Volts

- Output Power = 12 Watts

- Efficiency = 60% Typ

- Power Gain = 18 dB Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Surface Mountable

• Available in T ape and Reel

• 100% Lot Traceability

10137

A-1234569942

Package 20244

RF Specifications (100% T ested)

Characteristic Symbol Min T yp Max Units

Common Source Power Gain

(V

Power Output at 1 dB Compressed

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
—all phase angles at frequency of test)

All published data at T

= 28 V , P

DD

= 28 V , IDQ = 160 mA, f = 960 MHz) P-1dB 12 15 — W atts

DD

= 28 V , P

DD

= 28 V , P

DD

= 12 W, IDQ = 160 mA, f = 960 MHz) G

OUT

= 12 W, IDQ = 160 mA, f = 960 MHz) h 55 60 — %

OUT

= 12 W, IDQ = 160 mA, f = 960 MHz Y — — 10:1 —

OUT

= 25°C unless otherwise indicated.

CASE

ps

16.5 18 — dB

e

1

PTF 10137

y

Gain (dB)

y

s

e

Electrical Characteristics (100% T ested)

Characteristic Conditions Symbol Min T yp Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V

(BR)DSS

Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 0.5 A g

DSS

GS(th)

fs

65 — — Volts
——1mA

3.0 — 5.0 Volts
— 0.9 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation P

DSS

GS

J

D

Above 25°C derate by 0.33 W/°C
Storage T emperature Range T

Thermal Resistance (T

= 70°C) R

CASE

STG

qJC

65 Vdc
±20 Vdc
200 °C

58 Watts

–40 to 150 °C

3.0 °C/W

Typical Performance

Typical P

, Gain & Efficiency

OUT

(at P-1dB)

vs. Frequency

18
17
16
15

Gain

VDD = 28 V

14

= 160 mA

I

13
12
11

DQ

840 880 920 960 1000

Frequency (MHz)

Efficiency (%)

Outp ut P ower (W)

80
70
60
50
40
30
20
10

Output Power & Efficienc

Broadband Test Fixture Performance

20

Gain (dB)

16

Efficiency (%)

12

Gain

8

4

960 970 980 990 1000

VDD = 28 V

= 160 mA

I

DQ

= 12 W

P

OUT

Frequency (MHz)

Return L oss (d B )

80

70

60

-10
50

-20
40

Efficienc

Return Los

2

e

PTF 10137

19

IDQ = 160 mA

18

17

IDQ = 80 mA

16

IDQ = 40 mA

Power Gain (dB)

15

VDD = 28 V
f = 960 MHz

14

0.1 1. 0 10.0 100.0

Output Power (Watts)

Inter modulation Distort ion vs. O utput Pow er

(as measured in a broadband circuit)

0

VDD = 28 V, IDQ = 160 mA

Power Gain vs. Output Power

-10

-20

-30

IMD (dBc)

-40

-50

-60

=960.0 MHz, f2 = 960.1 MHz

f

1

3rd Order

5th

7th

0 5 10 15 20

Output Power (Watts-PEP)

Output Power vs. Supply Volt age

20

18

16

14

IDQ = 160 mA

12

Output Power (Watts)

10

24 26 28 30 32

f = 960 MHz

Supply Voltage (Volts)

Capacitance vs. Supply Volt age

70

60

50

40

30

Cds and Cgs (pF)

20

C

10

0 10203040

C

gs

ds

Supply Voltage (Volts)

VGS = 0 V
f = 1 MHz

C

rss

6

5

4

3

2

1

0

Crss (pF)

Bias Voltage vs. Temper atur e

1.03

1.02

1.01

1.00

0.99

0.98

Bias Voltage (V)

0.97

0.96

0.95

-20 0 20 40 60 80 100

0.075 0.33

0.585 0.84

1.095 1.35

Voltage normalized to 1.0 V
Series show current (A)

Temp. (°C)

3

PTF 10137

e

Impedance Data

Z Source Z Load

VDD = 28 V , IDQ = 160 mA, P-1dB = 18 W

Frequency Z Source W Z Load W

MHz R jX R jX

840 1.1 1.9 4.1 4.3
860 0.8 0.8 3.8 3.3
880 0.8 0.1 3.7 2.8
900 0.7 -0.3 3.6 2.3
920 0.6 -0.7 4.1 2.1
940 0.8 -0.9 4.3 2.0
960 1.1 -1.2 4.8 1.6
980 1.6 -1.2 5.3 2.6

1000 1.6 -0.9 5.0 3.7

D

G

S

Z0 = 50 W

>

-

-

-

R

O

T

A

R

E

N
E

G

D

R
A

W

O

T

S
H

T

Z Source

G
N

E
L

840 MHz

E

V
A

W

-

-

D
A

O

L

D
R

A

W

O
T

S

H

T

G
N

E
L

E

V

2

.

0

Z Load

1

.

0

840 MHz

0

.

0

1

.

0

A

W

-

-

-

<

0.1

1000 MHz

0.2

T ypical Scattering Parameters

(VDS = 28 V , ID = 450 mA)

f S11 S21 S12 S22

(MHz) Mag Ang Mag Ang Mag Ang Mag Ang

100 0.862 -126 25.8 101 0.018 11.5 0.575 -78.7
150 0.866 -135 21.1 93.6 0.018 3.96 0.583 -86.4
200 0.872 -146 15.5 80.9 0.018 -5.92 0.587 -97.4
250 0.881 -153 12.0 71.6 0.017 -13.4 0.613 -106
300 0.888 -157 9.57 63.7 0.016 -19.1 0.646 -113
350 0.896 -161 7.86 57.0 0.015 -24.0 0.679 -119
400 0.905 -164 6.55 51.0 0.013 -27.9 0.713 -124
450 0.910 -166 5.53 45.7 0.012 -31.0 0.742 -129
500 0.920 -168 4.74 40.8 0.011 -32.8 0.770 -133
550 0.927 -169 4.09 36.6 0.009 -34.0 0.792 -137

600 0.932 -171 3.57 32.4 0.008 -35.0 0.813 -141
650 0.940 -173 3.15 28.9 0.007 -34.2 0.834 -144
700 0.942 -174 2.79 25.5 0.006 -32.7 0.849 -147
750 0.948 -175 2.49 22.1 0.005 -27.9 0.865 -150
800 0.953 -177 2.23 19.3 0.004 -20.5 0.874 -152
850 0.955 -178 2.01 16.2 0.003 -8.60 0.884 -155
900 0.958 -179 1.83 13.6 0.003 10.9 0.896 -157
950 0.961 -180 1.66 11.1 0.003 32.3 0.902 -159

1000 0.963 179 1.52 8.52 0.003 47.7 0.912 -161
1050 0.967 178 1.39 6.44 0.004 57.8 0.917 -162
1100 0.967 177 1.27 4.07 0.004 63.1 0.921 -164
1150 0.967 176 1.18 1.96 0.005 68.8 0.929 -166
1200 0.970 175 1.09 0.12 0.006 70.7 0.932 -167
1250 0.970 174 1.01 -2.03 0.006 73.2 0.937 -169
1300 0.972 173 0.943 -3.66 0.007 74.5 0.943 -170
1350 0.973 172 0.874 -5.57 0.008 75.7 0.943 -172
1400 0.978 172 0.825 -7.37 0.009 75.8 0.950 -173
1450 0.978 171 0.772 -8.77 0.009 76.4 0.948 -174
1500 0.981 170 0.729 -10.7 0.010 76.6 0.952 -176
1550 0.981 169 0.689 -12.1 0.011 77.2 0.958 -177
1600 0.982 168 0.647 -13.9 0.012 76.3 0.958 -178
1650 0.983 167 0.615 -15.7 0.013 75.0 0.966 -179
1700 0.983 167 0.580 -16.9 0.013 74.7 0.964 -180
1750 0.983 166 0.549 -18.7 0.014 74.4 0.961 179
1800 0.983 165 0.525 -20.3 0.015 74.7 0.962 178
1850 0.981 164 0.499 -21.8 0.015 74.0 0.958 176
1900 0.981 163 0.478 -23.4 0.016 72.9 0.967 175
1950 0.981 162 0.454 -24.3 0.017 72.1 0.967 175
2000 0.981 161 0.431 -26.0 0.018 71.3 0.967 173
2050 0.981 161 0.414 -27.3 0.018 71.3 0.969 173
2100 0.979 160 0.395 -28.6 0.019 70.8 0.963 172
2150 0.979 159 0.382 -30.0 0.019 69.8 0.969 170
2200 0.975 158 0.371 -30.7 0.020 69.1 0.969 169

1000 MHz

0.3

4

e

Test Circuit

T est Circuit Schematic for f = 960 MHz

PTF 10137

DUT PTF 10137

l1, l6 Microstrip 50 W
l2 0.197 l 960 MHz Microstrip 10 W
l3 0.018 l 960 MHz Microstrip 44 W
l4 0.184 l 960 MHz Microstrip 12.7 W
l5 0.047 l 960 MHz Microstrip 50 W

C1 A TC 100 B Capacitor, 8.2 pF , A TC 100 B
C2,C4,C5,C8 A TC 100 B Capacitor, 36 pF , A TC 100 B
C3,C6 Digi-Key P4525-ND Capacitor, 0.1 mF , 50V
C7 Digi-Key P5182-ND Capacitor, 100 mF , 50V
C9, C10 ATC 100 B 2.0 pF Capacitor, A TC 100 B
R1, R2 Digi-Key 2.2 QBK Resistor , 220 W, 1/4W
L1,L2 N/A 4 T urn, 20 AWG, .120 I.D.
Circuit Board .028" Dielectric Thickness,

G200, 2 oz. copper

e

= 4.0, AlliedSignal,

r

Assembly Diagram (not to scale)

5

PTF 10137

Test Circuit

Artwork (1 inch )

e

Ericsson Microelectronics
RF Power Products

Morgan Hill, CA 95037 USA

1-877-GOLDMOS (465-3667) United States
[phone] International
e-mail: [e-mail]
www.ericsson.com/rfpower

6

Specifications subject to change without notice.
L3
© 1999 Ericsson Inc.
EUS/KR 1301-PTF 10137 Uen Rev. A 10-28-99