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PTF 10120
)
)
120 Watts, 1.8–2.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Pow er vs. Input Pow er
150
120
90
60
30
Output Power (Watts
0
Output P ower
VDD = 28 V
I
= 1.2 A Total
DQ
f = 1990 MHz
0 3 6 9 12 15 18
Input Power (Watts)
Efficiency
100
80
60
40
Efficiency (%
20
0
INTERNALLY MATCHED
•
• Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10120
A-1234569849
Package 20250
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V, P
DD
= 28 V, IDQ = 1.2 A Total, f = 1.99 GHz) P-1dB 120 — — Watts
DD
= 28 V, P
DD
= 28 V, P
DD
= 30 W, IDQ = 1.2 A Total, f = 1.99 GHz) G
OUT
= 120 W, IDQ = 1.2 A Total, f = 1.99 GHz) h
OUT
= 60 W, IDQ = 1.2 A Total, f = 1.99 GHz Y — — 10:1 —
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
10 11 — dB
—40 — %
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PTF 10120
y
y
y
s
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side) Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 100 mA V
(BR)DSS
Zero Gate Voltage Drain Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 150 mA V
Forward Transconductance VDS = 10 V , ID = 2 A g
DSS
GS(th)
fs
65 — — Volts
— — 5.0 mA
3.0 — 5.0 Volts
— 4.0 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature T
Total Device Dissipation at P
Above 25°C derate by 2.51 W/°C
Storage Temperature Range T
Thermal Resistance (T
(1)
per side
(1)
(1)
= 70°C) R
CASE
V
DSS
V
STG
GS
J
D
qJC
65 Vdc
±20 Vdc
200 °C
440 Watts
–40 to +150 °C
0.39 °C/W
Typical Performance
Typical P
12
11
10
Gain (dB)
9
Gain (dB)
8
7
1750 1850 1950 2050
, Gain & Efficiency
OUT
vs. Frequenc
Outp ut P ower (W)
VDD = 28 V
= 1.2 A Tota l
I
DQ
Frequency (MHz)
(at P-1dB)
Efficiency (%)
160
140
120
100
80
60
40
Output Power & Efficienc
20
12
11
10
Gain (dB)
9
8
Broadband Test Fixture Performance
Efficiency (%)
@P-1dB
Gain (dB)
Return Loss (dB)
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
VDD = 28 V
= 1.2 A Tota l
I
DQ
= 120 W
P
OUT
60
45
30
0
- 5
15
-10
-15
0
-20
Efficienc
Return Los
2
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I
PTF 10120
Power Gain vs. Out put Power
13
12
= 1200 mA
I
DQ
11
10
= 600 mA
DQ
9
= 300 mA
IDQ
Power Gain (dB)
8
7
1 10 100 1000
VDD = 28 V
f = 1990 MHz
Output Power (Watts)
Output Power vs. Supply Voltage
180
160
140
120
100
Output Power (Watts)
80
22 24 26 28 30 32 34
Supply Voltage (Volts)
IDQ = 1.2 A To ta l
f = 1990 MHz
Inter modulation Distort ion vs. O utput Pow er
(as measured in a broadband circuit)
-15
VDD = 28 V
-25
-35
-45
IMD (dBc)
-55
-65
Capacitance vs. Supply Volt age
Cds and Cgs (pF)
= 1.2 A Tota l
I
DQ
= 1959 MHz
f
1
= 1960 MHz
f
2
0 20 40 60 80 100 120 140
IM3
IM5
IM7
Output Power (Watts-PEP)
(per side)
240
200
160
120
80
40
0
0 10203040
C
gs
C
ds
VGS =0 V
f = 1 MHz
C
rss
Supply Voltage (Volts)
*
30
25
20
15
Crss
10
5
0
* This part is internally matched. Measurements of the finished
Impedance Data
(VDD = 28 V, P
IDQ = 1.2 A Total)
OUT
= 120 W,
Z Source Z Load
G
G
product will not yield these results.
D
S
D
Z0 = 50 W
Frequency Z Source W Z Load W
GHz R jX R jX
1.75 7.6 -10.5 4.6 -3.6
1.80 8.8 -13.0 4.2 -3.2
1.85 9.8 -14.1 4.0 -2.8
1.90 11.0 -15.2 3.7 -2.8
1.95 12.0 -17.0 3.6 -3.2
2.00 13.4 -17.5 3.4 -3.8
2.05 14.6 -18.0 3.2 -4.4
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PTF 10120
Test Circuit
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Test Circuit Block Diagram for f = 2.0 GHz
Q1 PTF 10120 LDMOS RF Transistor
l1, l2 Microstrip 50 W
l3, l4 .048 l @ 2.0 GHz Microstrip 31.7 W
l5, l6 .18 l @ 2.0 GHz Microstrip 70 W
l7, l8 .097 l @ 2.0 GHz Microstrip 9.35 W
l9, l10 .129 l @ 2 GHz Microstrip 7.6 W
l11, l12 .031 l @ 2 GHz Microstrip 8.8 W
l13, l14 .25 l @ 2 GHz Microstrip 65 W
C1, C2, C3, C4, C5,
C6, C11, C12 10 pF Chip Cap ATC 100 B
C7, C8, C15, C16 0.1 mF Chip Cap K1206
C9, C10, C13, C14 10 mF SMT Tantalum Cap
C17 0.7 pF Chip Cap ATC 100 B
L1, L2 2.7 nh SMT Coil
L3, L4 4 mm SMT Ferrite Bead
R1, R2, R3, R4 220 W Chip Resistor K1206
R5, R6 2K SMT Potentiometer
R7, R8 10 W Chip Resistor K1206
R9, R10 1 W Chip Resistor K1206
T1, T2 50 W Coaxial Balun
Circuit Board .028" Dielectric Thickness,
AlliedSignal, G200, 2 oz. copper
e
r
= 4.0,
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Parts Layout (not to scale)
PTF 10120
Artwork (1 inch
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
)
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com\rfpower
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Specifications subject to change without notice.
L3
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10120 Uen Rev. A 01-06-99
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Notes:
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