The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Typical Output Pow e r & Efficie ncy
vs. Input Power
8
7
6
5
4
3
2
1
Output Power (Watts)
0
0.00.10.20.30.40.5
Output Power
VDD = 26 V
I
= 70 mA
DQ
f = 2.0 GHz
Inp u t Power (Watts)
Eff iciency
100
80
60
40
20
0
Efficiency (%) X
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
10107
A-1234569845
Package 20244
RF Specifications (100% T ested)
CharacteristicSymbolMinTypMaxUnits
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 26 V , P
DD
= 26 V , IDQ = 70 mA, f = 1.99 GHz)P-1dB56.5—Watts
DD
= 26 V , P
DD
= 26 V , P
DD
= 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz)G
OUT
= 5 W, IDQ = 70 mA, f = 1.99 GHz)h
OUT
= 5 W, IDQ = 70 mA, f = 1.99 GHzY——10:1—
OUT
= 25°C unless otherwise indicated.
CASE
ps
D
11——dB
40——%
e
1
Page 2
PTF 10107
G
-
e
Electrical Characteristics (100% Tested)
CharacteristicConditionsSymbolMinT ypMaxUnits
Drain-Source Breakdown VoltageVGS = 0 V , ID = 20 mAV
(BR)DSS
Zero Gate Voltage Drain CurrentVDS = 26 V , VGS = 0 VI
Gate Threshold VoltageVDS = 10 V , ID = 75 mAV
Forward TransconductanceVDS = 10 V , ID = 2 Ag
DSS
GS(th)
fs
65——Volts——1.0mA
3.0—5.0Volts
—0.8—Siemens
Maximum Ratings
ParameterSymbolValueUnit
Drain-Source VoltageV
Gate-Source VoltageV
Operating Junction T emperatureT
T otal Device Dissipation atP
DSS
GS
J
D
Above 25°C derate by0.22W/°C
Storage T emperature RangeT
Thermal Resistance (T
= 70°C)R
CASE
STG
qJC
65Vdc
±20Vdc
200°C
39Watts
–40 to +150°C
4.5°C/W
Typical Performance
P
, Gain & Efficiency
OUT
15
13
ain (dB)
11
VDD = 26 V
9
I
= 70 mA
DQ
7
Gain & Output Power x
Output Power
5
1750 1800 1850 1900 1950 2000 2050
(at P-1dB)
Efficiency (%)
F requency (MHz)
vs. Freque ncy
65
55
45
35
25
15
Efficiency
Broadba nd Test Fixture Performa nce
14
Gain (dB)
12
= 70 mA
DQ
= 4 W
OUT
Efficiency (%)
10
8
Gain
6
4
2
1925195019752000
Return Loss (dB)
VCC = 26 V
I
P
Freque ncy (MHz)
60
50
40
- 5
30
-15
2010
-25
0
35
Efficiency
Return Loss
2
Page 3
e
CgsCdsC
C
I
I
=
I
PTF 10107
Output Powe r vs. Supply Vol ta ge
10
8
6
4
2
Output Power (Watts)
0
2224262830
IDQ = 70 mA
f = 2.0 GHz
Supply Voltage (Volts)
Power Gain vs. Output Power
14
= 70 mA
DQ
40 mA
DQ
= 20 mA
DQ
VDD = 26 V
f = 2.0 GHz
0.11.010.0
Outp ut Po wer (Watts)
Power Gain (dB)
13
12
11
10
9
8
Intermodul ation Distortion vs. Output Power
0
VDD = 26 V
-10
I
= 70 mA
DQ
-20
-30
-40
IMD (dBc)
-50
-60
-70
= 1999.9 MHz
f
1
f
= 2000.0 MHz
2
01234567
IM3
IM5
IM7
Outp u t Po wer (Watts-PEP)
Capa cita nce vs. Suppl y Vol ta ge
18
15
gs
0 10203040
Cds and Cgs (pF)
12
x
9
6
3
0
Supply Voltage (Volts)
VGS = 0 V
f = 1 MHz
rss
6
5
4
3
2
1
0
Crss (pF)
Bias Voltage vs. Temperature
1.03
1.02
1.01
1
0.99
0.98
Bias Voltage (V)
0.97
0.96
-203080130
Voltage normalized to 1.0 V
Series show current (A)
l10.303 l 1.99 GHzMicrostrip 50 W
l20.146 l 1.99 GHzMicrostrip 11.6 W
l30.076 l 1.99 GHzMicrostrip 17.7 W
l40.072 l 1.99 GHzMicrostrip 13.5 W
l50.060 l 1.99 GHzMicrostrip 17.7 W
l60.352 l 1.99 GHzMicrostrip 50 W