Datasheet PTF10019 Datasheet (Ericsson)

PTF 10019

r

70 Watts, 860–960 MHz

GOLDMOS

™

Field Effect T ransistor

Description

The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended
for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz
range. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.

Typical Output Pow er vs. Input Pow er

80

60

40

20

Output Power (Watts)

0

0.0 1.0 2.0 3.0 4.0

Input Power (Wa tts)

Output P owe

Efficiency

VDD = 28 V
I

= 600 mA

DQ

f = 960 MHz

74
66
58
50
42
34
26
18
10

Efficiency (%)

INTERNALLY MA TCHED

•

• Performance at 960 MHz, 28 Volts

- Output Power = 70 Watts

- Power Gain = 14.5 dB Typ

- Efficiency = 50% Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Excellent Thermal Stability

• 100% Lot Traceability

10019

A-1234568955

Package 20237

RF Specifications (100% T ested)

Characteristic Symbol Min T yp Max Units

Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
—all phase angles at frequency of test)

All published data at T

= 28 V , P

DD

= 28 V , IDQ = 600 mA, f = 960 MHz) P-1dB 70 75 — Watts

DD

= 28 V , P

DD

= 28 V , Pout = 70 W , IDQ = 600 mA, f = 960 MHz Y — — 10:1 —

DD

= 70 W, IDQ = 600 mA, f = 960 MHz) G

out

= 70 W, IDQ = 600 mA, f = 960 MHz) h 45 50 — %

out

= 25°C unless otherwise indicated.

CASE

pe

13.0 14.5 — dB

e

1

PTF 10019

y

R

(dB)

y

s

e

Electrical Characteristics (100% T ested)

Characteristic Conditions Symbol Min Typ Ma x Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V

(BR)DSS

Drain-Source Leakage Current VDS = 26 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g

DSS

GS(th)

fs

65 — — Volts
— — 1.0 mA

3.0 — 5.0 Volts
— 3.0 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation P

DSS

GS

J

D

Above 25°C derate by 1.25 W/°C
Storage T emperature Range T

Thermal Resistance (T

= 70°C) R

CASE

STG

qJC

65 Vdc
±20 Vdc
200 °C
215 Watts

–40 to +150 °C

0.8 °C/W

Typical Performance

Typical P

16

15

14

Power G ai n (d B )

13

, Gain, and Efficiency

OUT

vs. Frequency

Outp ut P ower (W)

Power Gain @ P-1dB

12

800 850 900 950 1000

Frequency (MHz)

(at P-1 dB)

Efficiency (%)

90

80

70

60

50

Output Power and Efficienc

16

14

12

10

Gain

8

6

4

900 915 930 945 960

Broadband Test Fixture Performance

Gain (dB)

Efficiency (%)

VDD = 28 V, IDQ = 600 mA, P

eturn Loss

Frequency (MHz)

OUT

= 70 W

70

60

50

40

- 5

30

-15

20

-25

10

Efficienc

Return Los

2

e

I

I

I

r

)

PTF 10019

Power Gain vs. Output Power

18
17
16
15
14
13

Gain (dB)

12
11
10

= 600 mA

DQ

= 300 mA

DQ

= 150 mA

DQ

0.1 1.0 10.0 100.0

Output Power (Watts)

Inter modulation Distortion vs. Output Power

-10

VDD = 28 V

-20

-30

-40

IMD (dBc)

-50

-60

= 600 mA

I

DQ

= 959.900 MHz

f

1

= 960.000 MHz

f

2

0 1020304050607080

3rd Orde

5th

7th

Output Power (W atts-PEP)

Output Power

90
85
80
75
70
65
60

Output Power (Watts)

55

23 2 5 27 29 31 33

(at P-1dB)

vs. Supply Voltage

f = 960 MHz

= 600 mA

I

DQ

Drain-Source Voltage (Volts)

200
180
160
140
120
100

80
60

Cds and Cgs (pF

40
20

Capacitance vs. Voltage *

VGS = 0 V
f = 1 M Hz

C

gs

C

ds

C

rss

0

0 10203040

Supply Voltage (Volts)

20
18
16
14
12
10
8
6
4
2
0

Crss (pF)

* This part is internally matched. Measurements of the
finished product will not yield these figures.

Bias Voltage vs. Temper at ure

1.04

1.02

1.00

0.98

Bias Voltage (V)

0.96

0.94

-20 30 80 130

Voltage normalized to 1.0 V
Series show current (A)

0.40

1.32

2.25

3.17

4.09

5.02

Temp. (°C)

3

PTF 10019

Impedance Data

e

(VDD = 28 V , Pout = 70 W , IDQ = 600 mA)

D

Z Source Z Load

G

S

Frequency Z Source W Z Load W

MHz R jX R jX

840 0.9 0 2.3 1.7
860 1.0 -0.2 2.0 1.6
900 1.2 -0.4 1.8 1.6
920 1.2 -0.4 1.7 1.6
960 1.8 -0.7 1.6 1.7
980 2.2 -0.6 1.6 1.8

Test Circuit

Z0 = 10 W

T est Circuit Schematic for f = 960 MHz

DUT PTF 10019 LDMOS Field Effect T ransistor

l1, l6 Microstrip 50 W
l2 0.125 l 960 GHz Microstrip 50 W
l3 0.186 l 960 GHz Microstrip 10 W
l4 0.200 l 960 GHz Microstrip 7.5 W
l5 0.060 l 960 GHz Microstrip 50 W

C1, C2, C4, C6 36 pF Chip Cap ATC 100 B
C3 3.6 pF Chip Cap ATC 100 A
C5 0.01 mF Capacitor Digi-Key P4917-ND

4

C7 50 mF , 35 V Electrolytic Capacitor,

Digi-Key P5276
C8 1.7 pF Chip Cap ATC 100 B
L1 4 T urn, #20 A WG, .120"I.D.
R1, R2, R3 220 W, 1/4 W Resistor
R4 10K W, 1/4 W Resistor
Circuit Board .028" Dielectric Thickness,

AlliedSignal, G200, 2 oz. copper

e

r

= 4.0,

e

Components Layout (not to scale)

PTF 10019

10019

Artwork (1 inch )

Ericsson Microelectronics
RF Power Products

Morgan Hill, CA 95037 USA

1-877-GOLDMOS (465-3667) United States
[phone] International
e-mail: [e-mail]
www.ericsson.com/rfpower

5

Specifications subject to change without notice.
L3
© 1997 Ericsson Inc.
EUS/KR 1301-PTF 10019 Uen Rev . A 10-22-99

Notes:

eeeeeeeeeee

6