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Description
PTB 20230
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
The 20230 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
70
60
50
40
30
20
10
Output Power (Watts)
0
0246810
Input Power (Wa tts)
VCC = 26 V
I
= 250 mA
CQ
f = 2.0 GHz
45 Watts, 1.8–2.0 GHz
Class AB Characteristics
45% Collector Efficiency at 45 Watts
Gold Metallization
Silicon Nitride Passivated
20230
LOT CODE
Package 20234
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.2 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25° C P
flange
= 70° C) R
1
CER
CBO
EBO
C
D
STG
θJC
55 Vdc
55 Vdc
4.0 Vdc
7.7 Adc
200 Watts
–40 to +150 °C
0.85 °C/W
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PTB 20230
)
)
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
(BR)CES
(BR)CER
(BR)EBO
DC Current Gain VCE = 5 V, IC = 1 A h
FE
55 — — Volts
55 — — Volts
4.0 5.0 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Gain Compression
(V
Input Return Loss
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 2 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 250 mA, f = 2 GHz) P-1dB 45 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 45 W, ICQ = 250 mA, f = 2 GHz) G
OUT
= 45 W, ICQ = 250 mA, f = 2 GHz) Rtn Loss 10 — — dB
OUT
= 45 W, ICQ = 250 mA, f = 2 GHz) η
OUT
= 45 W, ICQ = 250 mA, Ψ — — 3:1 —
OUT
pe
C
8.5 9.5 — dB
45 50 — %
Typical Performance
P
, Gain & Efficiency
OUT
12
11
10
Gain (dB)
Gain
9
VCC = 26 V
8
I
= 250 mA
CQ
7
1750 1800 1850 1900 1950 2000 2050
Frequency (MHz)
(at P-1dB)
Outp ut P ower (W)
Efficiency (%)
vs. Frequency
70
60
50
40
30
20
Broadband Test Fixture Performance
20
16
12
Gain (dB)
Gain (dB)
8
Output Power & Efficiency
2
4
1900 1925 1950 1975 2000
VCC = 26 V
I
CQ
P
Return Loss (dB)
Frequency (MHz)
Efficiency (%)
= 250 mA
= 45 W
OUT
60
50
40
Efficiency (%
- 5
30
-15
20
-25
10
-35
0
Return Loss (dB
/28/98
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PTB 20230
Output Power vs. Supply Volt age
70
65
60
55
50
45
Output Power (Watts)
40
22 23 24 25 26 27
Supply Voltage (Volts)
ICQ = 250 mA
f = 2.0 GHz
Power Gain vs. Output Power
11
= 250 mA
I
CQ
10
= 125 mA
I
CQ
9
Inter modulation Distort ion vs. O utput Pow er
-20
-30
-40
-50
IMD (dBc)
-60
-70
10 20 30 40 50 60
Output Power (Watts-PEP)
VCC = 26 V
I
= 250 mA
CQ
f
= 1999.9 MHz
1
f
= 2000.0 MHz
2
= 65 mA
I
CQ
8
Power Gain (dB)
7
0 1 10 100
VCC = 26 V
f = 2.0 GHz
Output Power (Watts)
Impedance Data
VCC = 26 Vdc, P
= 45 W, ICQ = 250 mA
OUT
Frequency Z Source Z Load
GHz R jX R jX
1.75 3.36 -5.20 3.20 -3.10
1.80 3.57 -5.70 3.00 -2.80
1.85 5.14 -5.55 2.90 -2.50
1.90 6.60 -5.40 2.77 -2.10
1.95 8.00 -3.80 2.75 -1.80
2.00 8.95 -1.50 2.80 -1.40
2.05 7.72 0.00 2.95 -1.00
Z Source Z Load
Z0 = 50 Ω
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/28/98
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PTB 20230
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Typical Scattering Parameters
(VCE = 26 V, IC = 1.75 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
100 0.936 -179 1.44 77 0.002 6 0.798 -172
200 0.946 -179 1.06 70 0.002 23 0.828 -174
300 0.963 -180 0.397 34 0.003 71 0.883 -174
400 0.970 179 0.194 19 0.004 85 0.924 -175
500 0.972 179 0.100 11 0.006 89 0.943 -177
600 0.971 178 0.046 12 0.009 88 0.982 -179
700 0.972 178 0.014 55 0.011 84 1.00 177
800 0.975 178 0.026 130 0.012 83 0.952 175
900 0.980 177 0.048 137 0.014 83 0.923 174
1000 0.980 177 0.069 135 0.017 80 0.895 174
1100 0.984 176 0.090 132 0.019 74 0.898 175
1200 0.986 176 0.113 128 0.019 72 0.897 174
1300 0.994 175 0.144 124 0.020 74 0.892 174
1400 1.00 173 0.186 119 0.023 75 0.885 174
1500 0.995 171 0.247 113 0.028 72 0.881 173
1600 0.976 169 0.350 105 0.034 67 0.875 172
1700 0.952 166 0.585 92 0.043 57 0.856 170
1800 0.757 162 1.02 48 0.052 23 0.751 171
1900 0.682 176 1.02 5 0.038 -7 0.756 178
2000 0.825 -171 0.979 -43 0.019 -55 0.848 -178
2100 0.965 -177 0.526 -76 0.004 67 0.897 178
2200 0.994 180 0.355 -87 0.009 94 0.908 177
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
/28/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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Specifications subject to change without notice.
L1
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20230 Uen Rev. A 09-28-98
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