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Description
PTB 20003
4 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
The 20003 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 4 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
12
10
8
6
4
2
Output Power (Watts)
0
0.00 0.15 0.30 0.45 0.60 0.75
Input Power (Wa tts)
VCC = 25 V
I
= 50 mA
CQ
f = 960 MHz
Specified 25 Volts
4 Watts, 915–960 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
2000320003
20003
2000320003
LOT CODE
Package 20201
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.2 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4.0 Vdc
1.7 Adc
35 Watts
–40 to +150 °C
5.0 °C/W
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PTB 20003
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 mA h
(BR)CEO
(BR)CES
(BR)EBO
FE
25 30 — Volts
55 70 — Volts
4 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f1 = 959.999 MHz, f2 = 960.000 MHz)
Load Mismatch Tolerance
(V
f = 960 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 4 W, ICQ = 50 mA, f = 960 MHz) G
out
= 4 W, ICQ = 50 mA, f = 960 MHz) η
out
= 4 W(PEP), ICQ = 50 mA, IMD — -28 — dBc
out
= 4 W, ICQ = 50 mA, Ψ — — 30:1 —
out
pe
C
11 13 — dB
50 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, P
= 4 W, ICQ = 50 mA)
out
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
915 6.7 -1.8 6.8 15.5
935 6.8 -1.3 6.9 16.0
960 6.8 -0.7 7.0 17.0
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Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
15
PTB 20003
80
14
Gain (dB)
13
12
Gain (dB)
11
10
9
900 915 930 945 960 975
Frequency (MHz)
Efficiency (%)
VCC = 25 V
Pout = 4 W
70
60
50
40
Efficiency (%)
30
20
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20003 Uen Rev. D 09-28-98
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