Page 1
PT495F
PT495F
Intermediate Acceptance
High Sensitivity Phototransistor
■
Features
1. Epoxy resin package type
2. Compact
3. Intermediate acceptance (∆θ: TYP.± 40˚ )
4. Long lead pin type MAX. lead length of 51.5 mm
(
acceptable to order
5 . Visible light cut-off type
■
Applications
1. VCRs
2. Optoelectronic switches
■
Outline Dimensions
2-C0.5
3.0
R1.25±
1.5
2.8
0.1
4.043.0±1
(Unit : mm)
1.55
1.15
0.75
)
1.4
2-0.8
+0.15
-
0.05
(1.7)
(3.0)(18.5)
(2.54)
1
2.8
2
2 Collector
1 Emitter
(2-0.6 )
2-0.45
(Note) MAX. lead length of 51.5 mm acceptable to order
Visible light cut-off
resin (black)
+0.15
2-0.4
-
0.05
2
1
■
Absolute Maximum Ratings
(Ta=25˚C)
Parameter Symbol Rating Unit
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 1 For 3 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
35 V
6V
50 mA
75 mW
-25 to +85
-40 to +85
˚C
˚C
260 ˚C
Page 2
PT495F
Electro-optical Characteristics
■
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current
Dark current
*2
Collector-emitter saturation voltage
Peak sensitivity wavelength
Response time
Rise
Fall
Half intensity angle
*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
ve
I
I
CEOVCE
V
CE(sat
λ
t
t
∆
Fig. 1 Collector Power Dissipation vs.
Ambient temperature
80
)
70
mW
(
60
C
50
40
30
20
10
Collector power dissipation P
0
-
25
250 50 10075 85
Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)
V
C
IC= 0.8mA,
)
E
p
VCE= 2V, IC= 5mA
r
RL= 100Ω
f
θ -
= 2V,
CE
= 10V, E
= 1mW/cm
e
E
= 2 lx
V
=0
e
2
-
-
Fig. 2 Dark Current vs. Ambient temperature
-4
10
5
V
CE
= 10V
-5
10
5
)
-6
10
A
(
5
CEO
-7
10
5
-8
10
5
-9
10
Dark current I
5
-10
10
5
-11
10
5
-
25 0 25 50 75 100
(Ta=25˚C)
0.2 0.8 mA
--10
-
-6
A
- - 1.0 V
- 860 - nm
-
80
400
-
70
350
µs
±40 -
˚
Fig. 3 Relative Collector Current vs.
Ambient temperature
175
V
=2V
CE
E
= 2 1x
V
150
125
100
75
Relative collector current (%)
50
-
25 500 25 75 100
Ambient temperature Ta (˚C)
Fig. 4 Collector Current vs. Irradiance
50
V
=2V
CE
Ta= 25˚C
20
)
mA
(
C
10
5
Collector current I
2
1
25 25
-1
10
Irradiance Ee (mW/cm
2
)
1
Page 3
PT495F
Fig. 5 Collector Current vs. Collector-emitter voltage
50
45
40
)
=
E
e
35
mA
(
C
30
25
20
15
Collector current I
10
5
0
01234567
0.5mW/cm
2
0.25mW/cm
0.2mW/cm
0.15mW/cm
0.1mW/cm
(
P
MAX.
C
2
2
2
2
Collector-emitter voltage VCE (V
T
= 25˚C
a
)
)
Fig. 7 Response Time vs. Load Resistance
1000
Response time (µ s)
=2V
V
CE
= 5mA
I
C
Ta= 25˚C
100
10
1
10 100 1000
Load resistance R
t
r
t
f
t
d
t
s
5000
)
(Ω
L
Fig. 6 Spectral Sensitivity
100
80
60
40
Relative sensitivity (%)
20
0
500 600 700 800 900 1000 1100 1200
Wavelength λ (nm)
Test Circuit for Response Time
Output
Input
V
CC
R
L
Output
t
d
t
r
T
= 25˚C
a
90%
10%
t
s
t
f
Fig. 8 Radiation Diagram
- 10˚- 20˚ 0˚
(
+10˚
T
a
= 25˚C
+20˚
)
100
- 30˚
+ 30˚
80
- 40˚
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
60
40
Relative sensitivity (%)
20
0
+ 40˚
+ 50˚
+ 60˚
+ 70˚
+ 80˚
+ 90˚
Angular displacement θ
●
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Fig. 9 Collector-emitter Saturation Voltage
vs. Irradiance
2.2
)
V
(
)
2.0
sat
(
CE
1.8
1.6
1.4
1.2
1mA
= 0.5mA
C
I
2mA
3mA
5mA
1.0
0.8
0.6
Collector-emitter saturation voltage V
0.4
0.10.01 1
Irradiance Ee (mW/cm
= 25˚C
T
a
2
)
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