Page 1
PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
■ Features
1. Thin type package (Thickness : 1.5mm
2. Visible light cut-off type :
PT4800F/PT4810F/PT4850F
3. Single phototransistor output :
PT4800/PT4800F/PT4850F
Darlington phototransistor output:
PT4810/PT4810F
4. Thin type
■ Applications
1. VCRs
2. Floppy disk drives
)
Thin Type Phototransistor
■ Outline Dimensions
0.8
)
)
1
PT4800
PT4810
F type
3.0
1.6
1.0
1.7
0.8
1.8
MIN.
0.5
2.54
2
Transparent resin
Transparent blue resin
Visible light cut-off resin (black
MAX
2 - C0.5
: 0.3
Rest of gate
φ 0.8
2 - 0.45
MAX
2 - 0.9
: 0.3
Burry's dimensions
PT4810F
Mark(blue
PT4850F
Mark(black
3.5
0.5
±
17.5
❈ Epoxy resin
(
1.5
0.8
❈ Epoxy resin
0.7
2 - 0.25
1 Emitter
2 Collector
Unit : mm
PT4800/F
PT4850F
2
1
PT4810/F
2
1
)
)
■ Absolute Maximum Ratings
(
Ta =25˚C
)
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current
PT4800/PT4800F/PT4850F
PT4810/PT4810F 50
Collector power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature T
*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
I
CEO
ECO
C
C
opr
stg
sol
35 V
6V
20
mA
75 mW
- 25 to +85
- 40 to +85
˚C
˚C
260 ˚C
Page 2
PT4800/PT4800F/PT4810/PT4810F/PT4850F
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current
Collector dark current
PT4800
PT4800F 0.08 0.25 0.75 mA
PT4850F 0.12 - 0.56 mA
PT4810 E
PT4810F 0.27 - 6.0 mAV
PT4800/PT4800F
PT4850F
Ee= 1mW/cm
VCE=5V
I
C
= 0.1mW/cm
e
=2V
CE
Ee= 0, VCE= 20V - - 0.1 m A
I
CEO
PT4810/PT4810F Ee= 0, VCE= 10V - - 1.0 m A
=10mW/cm
V
(
sat
CE
)
CEO
ECO
E
e
=0.5mA
C
= 1mW/cm
E
e
I
= 2.5mA
C
IC= 0.1mA
E
=0
e
IE= 0.01mA
E
=0
e
*2
Collector-emitter saturation
voltage
PT4800/PT4800F
PT4850F I
PT4810/PT4810F
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
PT4800
Peak sensitivity
wavelength
PT4800F - 860 - nm
PT4850F -
λ p
PT4810 - 800 - nm
PT4810F - 860 - nm
Response
time
PT4800/PT4800F
PT4850F
Rise time
PT4810/PT4810F
PT4800/PT4800F
PT4850F
Fall time
PT4810/PT4810F
VCE= 2V, IC= 2mA
R
=100Ω
L
t
r
V
CE
=10mA
I
C
R
L
=2V
=100Ω
VCE= 2V, IC= 2mA
R
= 100Ω
L
t
f
V
CE
= 10mA
I
C
R
L
=2V
=100Ω
Half intensity angle ∆θ -
*2 Ee : Irradiance by CIE standard light source A (tungsten lamp
)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
)
100
mW
(
C
80
60
40
20
Collector power dissipation P
0
-
25 0 25 50 75 100
Ambient temperature Ta (˚C
85 0 25 50 75 100
)
2
2
2
2
-
-
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
10
)
A
(
10
CEO
10
10
Collector dark current I
10
-6
5
2
-7
5
2
-8
5
2
-9
5
2
-10
(
PT4800/PT4800F/PT4850F
VCE= 20V
Ambient temperature T
(
Ta = 25˚C
)
0.12 0.4 1.0 mA
0.45 - 7.0 mA
- - 0.4 V
- - 1.0 V
35 - - V
6--V
- 800 - nm
860 - nm
- 3.0 - µ s
- 80 400 µs
- 3.5 - µs
- 70 350 µs
±35 -
˚
)
)
(˚C
a
Page 3
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 2-b Collector Dark Current vs. Ambient
Temperature
(
-4
10
V
5
CE
= 10V
-5
10
)
5
A
(
-6
10
5
CEO
-7
10
5
-8
10
5
-9
10
5
-10
Collector dark current I
10
5
-11
10
5
-
25 0 25 50 75 100
Ambient temperature Ta (˚C
PT4810/PT4810F
)
)
Fig. 3-b Relative Collector Current vs.
Ambient Temperature
175
)
150
%
(
125
100
Relative collector current
75
(PT4810/PT4810F
VCE=2V
= 0.1mW/cm
E
e
2
)
Fig. 3-a Relative Collector Current vs.
Ambient Temperature
160
140
)
%
(
120
100
Relative collector current
(
PT4800/PT4800F/PT4850F
VCE=5V
Ee= 1mW/cm
80
60
40
20
0
0
10 20 30 40 7050 60
2
Ambient temperature T
a
(˚C
)
Fig. 4-a Collector Current vs.
Irradiance
20
V
=5V
CE
T
= 25˚C
a
10
)
5
mA
(
C
2
1
0.5
Collector current I
0.2
(
PT4800
)
)
50
-
25
Ambient temperature T
500 25 75 100
(˚C)
a
0.1
0.1 0.2 0.5 2 5 20
110
Irradiance E
(
e
mW/cm
2
)
Fig. 4-b Collector Current vs. Irradiance Fig. 4-c Collector Current vs. Irradiance
(
10
V
=5V
CE
T
= 25˚C
5
a
)
mA
2
(
C
1
0.5
Collector current I
0.2
0.1
0.05
0.1 0.2 0.5 2 5 20
PT4800F/PT4850F
110
Irradiance E
(mW/cm
e
2
)
)
)
mA
(
C
0.5
Collector current I
0.2
0.1
(PT4810/PT4810F
5
V
=2V
CE
T
= 25˚C
a
2
-1
(mW/cm
e
PT4810F
2
)
1
25 25
PT4810
10
Irradiance E
)
1
Page 4
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 5-a Collector Current vs.
Collector-emitter Voltage
0.6
0.5
)
mA
(
0.4
C
0.3
0.2
Collector current I
0.1
0
0 5 10 15 20 25 30 35
Ee= 1.0mW/cm
0.75mW/cm
0.5mW/cm
0.25mW/cm
0.1mW/cm
Collector-emitter voltage VCE (V
Fig. 5-c Collector Current vs.
Collector-emitter Voltage
(PT4810
= 0.2mW/cm
E
e
0.15mW/cm
)
(
mA
C
2.4
2.0
1.6
1.2
2
2
2
(
PT4800
Ta= 25˚C
2
2
2
2
Ta= 25˚C
Fig. 5-b Collector Current vs.
Collector-emitter Voltage
)
)
(
mA
C
1.2
1.0
0.8
0.6
0.4
Collector current I
0.2
)
(PT4800F/PT4850F
= 3mW/cm
E
e
2.5mW/cm
2.0mW/cm
1.5mW/cm
1.0mW/cm
0
02468101214
Collector-emitter voltage V
2
2
2
2
0.8mW/cm
2
0.6mW/cm
CE
Ta= 25˚C
2
2
)
(V
)
Fig. 5-d Collector Current vs.
)
Collector-emitter Voltage
(PT4810F
= 0.2mW/cm
E
e
0.15mW/cm
2
2
)
(
mA
C
1.2
1.0
0.8
0.6
)
Ta= 25˚C
2
0.8
Collector current I
0.4
0
0123456
0.1mW/cm
0.08mW/cm
0.06mW/cm
0.04mW/cm
2
2
2
Collector-emitter voltage V
Fig. 6 Spectral Sensitivity
100
Ta= 25˚C
80
)
%
(
60
40
Relative sensitivity
20
0
400 500 600 700 800 900
PT4800
PT4810
Wavelength λ (nm
PT4800F
PT4801F
PT4850F
0.02mW/cm
)
(V
CE
)
0.4
Collector current I
2
0.2
0
0123456
0.08mW/cm
0.06mW/cm
0.04mW/cm20.02mW/cm
Collector-emitter voltage VCE (V
0.1mW/cm
2
2
2
2
)
Fig. 7-a Response Time vs. Load Resistance
(
100
50
)
µs
(
f
20
, t
r
10
Response time t
PT4800/PT4800F/PT4850F
V
=2V
CE
I
= 2mA
C
T
= 25˚C
a
5
t
f
t
r
t
r
t
f
2
1
11001000
0.1 0.2 0.5 2 5 10
1
Load resistance RL (kΩ
)
)
Page 5
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 7-b Response Time vs. Load Resistance
1000
VCE=2V
I
= 10mA
C
T
a
)
100
µs
(
10
Response time
1
10 100
= 25˚C
(
PT4810/ PT4810F
t
r
t
f
t
d
t
s
Load resistance R
1000 5000
(Ω
L
)(
)
Test Circuit for Response Time
(
PT4810/ PT4810F
Output
Input
V
CC
R
L
Output
t
d
)
t
s
t
t
r
Fig. 9-a Collector-emitter Saturation
Voltage vs. Irradiance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
)
0.6
sat
(
CE
0.4
Collector-emitter saturation voltage
V
0.2
0
0.1 0.2 0.5 2 5 10
= 0.05mA
C
I
Irradiance E
0.1mA
1
0.5mA
(mW/cm
e
(
PT4800
1.0mA
1.5mA
2
)
)(
Ta= 25˚C
90%
10%
f
Test Circuit for Response Time
PT4800/ PT4800F/ PT4850F
Output
Input
V
CC
R
L
Output
t
r
Fig. 8 Sensitivity Diagram
- 10˚- 20˚ 0˚
- 30˚
- 40˚
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
Angular displacement θ
+ 10˚
100
80
)
%
(
60
40
Relative sensitivity
20
0
Fig. 9-b Collector-emitter Saturation
Voltage vs. Irradiance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
)
0.8
V
(
)
0.6
sat
(
CE
0.4
Collector-emitter saturation voltage
V
0.2
= 0.05mA
C
I
Ta= 25˚C
0
0.1 0.2 0.5 2 5 20
PT4800F/ PT4850F
0.5mA
0.1mA
Irradiance Ee (mW/cm
1.0mA
110
90%
10%
t
f
(
T
1.5mA
2
)
= 25˚C
a
+ 20˚
2.0mA
)
)
+ 30˚
+ 40˚
+ 50˚
+ 60˚
+ 70˚
+ 80˚
+ 90˚
)
Page 6
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 9-c Collector-emitter Saturation Voltage
(
2mA
(mW/cm
PT4810
6mA
4mA
2
)
vs. Irradiance
2.2
T
= 25˚C
a
2.0
1.8
1.6
1.4
1.2
1.0
)
V
(
0.8
)
sat
(
0.6
CE
V
Collector-emitter saturation voltage
0.4
0.2
0
0.01 0.02 0.05 0.2 0.5 2
(PT4800F) (Emitter : GL4800
100
50
20
)
%
(
10
5
Relative output
2
1
0.5
1mA
= 0.5mA
C
I
0.1 1
Irradiance E
e
)
8mA
)
Fig.9-d Collector-emitter Saturation Voltage
vs. Irradiance
2.0
1.8
1.6
1.4
1.2
1.0
)
V
0.8
(
)
0.6
sat
(
CE
0.4
Collector-emitter saturation voltage
V
0.2
0
1mA
= 0.5mA
C
I
0.05 0.1 0.5 1 2
Irradiance Ee (mW/cm
2mA
0.20.020.01
4mA
6mA
(
PT4810F
8mA
2
)
)
Ta= 25˚C
Fig.10-b Relative Output vs. DistanceFig.10-a Relative Output vs. Distance
(
PT4810F)
100
50
)
20
%
(
10
5
Relative output
2
1
0.5
(
Emitter : GL4800
)
0.2 0.5 2 5 20 50
110
Distance between emitter and detector d (mm
)
● Please refer to the chapter “ Precautions for Use”
0.2
0.5 1 2 5 10 20 50
Distance between emitter and detector d (mm
)
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