Page 1
PT4120
Side View and Thin Flat Type
PT4120
■■
Features
1. 2-phase PT output type
(Read pitch : 0.94 mm)
2. Compact, thin and flat package
Applications
■
1. Mouses
2. Track balls
3. Encoders
2-Phase Output Phototransistor
Outline Dimensions
2-C0.5
0.8
MAX.
+ 0.3
-
0.1
12 3
3.0
(1.7)
(2.54)
MAX.
Gate burr
0.3
MAX.
Rugged resin
0.8
Rugged resin 0.2
3-0.45
PT B
PT A
1.4
3.9
16.5±1.0
+ 1.5
1.5
1.0
-
18.0
56˚
4.0
2.0
1.8
0.7
4˚
4˚
1.0
±
5.0
0.7
MAX.0.1
4˚
0.15
3-0.4
(1.5)
(Unit : mm)
Transparent
epoxy resin
4˚
+0.3
-
0.1
Absolute Maximum Ratings
■
Parameter Symbol Rating Unit
Collector-emitter voltage V
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
CEO
ECO
C
C
opr
stg
T
sol
(Ta = 25˚C)
35 V
6V
20 mA
75 mW
-25to +85
-40to +85
˚C
˚C
260 ˚C
6˚ 6˚
2.8
* Tolerance : ± 0.2 mm
1
2
Shape of detector portion
6˚6˚
1 Emitter (PT A)
2 Collector (common)
3
3 Emitter (PT B)
0.17
0.81
Soldering area
0.470.47
0.94
1.4mm
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
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Electro-optical Characteristics
■
(Ta= 25˚C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
*2
Collector current I
Dark current I
Collector-emitter saturation voltage V
Collector-emitter breakdown voltage BV
Emitter-collector breakdown voltage BV
C
CEO
CE(sat)
CEO
ECO
EV= 1 000 lx
V
=5V
CE
*2
Ee= 0,VCE= 20V
*2
EV=1 000 lx
I
=0.1mA
C
IC= 0.1mA
*2
E
=0
e
IE=0.01mA
*2
E
=0
e
0.45 - 1.8 mA
- - 0.1 µA
- 0.1 0.4 V
35 - - V
6--V
Peak sensitivity wavelength λp - 800 - nm
Response time
2-element I variation
*2 E , E : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
ve
*3 Terminals other than test terminal shall be released.
C
Rise Time t
Fall Time t
RI
r
f
VCE=2V,IC=2mA - 3.0 - µ s
- 3.5 - µ sRL=100Ω
C(a)/IC(b)
0.7 - 1.3 -
PT4120
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
(mW)
60
C
50
40
30
20
10
Collector power dissipation P
0
-
25 0 25 50 75 100
Ambient temperature Ta ( ˚C) Ambient temperature Ta ( ˚C)
Fig. 2 Dark Current vs. Ambient Temperature
-6
10
VCE=20V
5
2
-7
10
5
(A)
CEO
2
-8
10
5
2
-9
Dark current I
10
5
2
-10
10
85
0 255075100
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PT4120
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
=5V
V
CE
140
EV=1 000 lx
120
100
80
60
40
Relative collector current (%)
20
0
0
10 20 30 40 7050 60
Ambient temperature Ta (˚C) Illuminance EV (lx)
Fig. 5 Collector Current vs.
Collector-emitter Voltage
1.6
1.4
1.2
1
0.8
0.6
0.4
Collector current Ic (mA)
0.2
Ev = 1 000 lx
750 lx
500 lx
250 lx
100 lx
Fig. 4 Collector Current vs. Illuminance
20.0
V
=5V
CE
Ta= 25˚C
10.0
5.0
2.0
1.0
0.5
Collector current Ic (mA)
0.0
0.1
10 20 50
100 200 500 1000 2000
Fig. 6 Spectral Sensitivity
100
Ta= 25˚C
80
60
40
Relative sensitivity (%)
20
0
0
51015
20 25 30 35
Collector-emitter voltage VCE (V)
Fig. 7 Response Time vs. Load Resistance
100
=2V
V
CE
Ic = 2mA
50
T
= 25˚C
a
20
(µs)
f
,t
r
10
5
t
f
t
Response time t
r
2
1
0.1 0.2 0.5 2 5 10
Load resistance RL (kΩ)
t
r
t
f
1
0
400 500 600 700 800 900
Wavelength λ (nm)
Test Circuit for Response Time
Output
Input
Vcc
R
L
Output
t
r
90%
10%
t
f
11001000
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PT4120
Fig. 9 Collector-emitter Saturation Voltage
vs. Irradiance
2
(V)
1.8
CE(sat)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Collector-emitter saturation voltage V
0
10 100 1000
=0.05mA
C
I
=0.1mA
I
Irradiance Ee (mW/cm2)
●
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
=0.4mA
=0.6mA
=0.2mA
C
C
I
C
C
I
I
Fig. 10 Relative Output vs. Distance
100
10
1
Relative output (%)
0.1
0.01
0.1
Distance between emitter and detector d (mm)
(Detector : GL4100)
110
Ta =25˚C
100
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