Page 1
DATA SHEET
DATA SHEET
PHOTOCOUPLERS
PS8602, PS8602L
HIGH NOISE REDUCTION
HIGH SPEED ANALOG OUTPUT TYPE
8 PIN PHOTOCOUPLER
DESCRIPTION
PS8602 and PS8602L is a 8-pin high speed photocoupler containing a GaAIAs LED on input side and a P-N
photodiode and a high speed amplifier transistor on output side on one chip. PS8602 is in a plastic DIP (Dual In-line
Package). PS8602L is lead bending type (Gull wing) for surface mount.
FEATURES
• High common mode transient immunity
(OMR, OML: 2000 V/s MIN.)
• High supply voltage (VCC = 35 V MAX.)
PHL
• High speed response (t
• High isolation voltage (BV: 5 000 V
• TTL, CMOS compatible with a resistor
• Taping product number (PS8602L-E3)
• UL recognized [File No. E72422(s)]
• VDE0884 recognized: option
PLH
, t
: 0.8 s MAX.)
r.m.s
. MIN.)
APPLICATIONS
• Interface circuit for various instrumentations, control equipments.
• Computer and peripheral manufactures.
ORDERING INFORMATION
PART NUMBER PACKAGE SAFETY STANDARD APPROVAL
PS8602 8 pin DIP
PS8602L 8 pin DIP, lead bending type
PS8602L1
PS8602L2
PS8602-V 8 pin DIP
PS8602L-V 8 pin DIP, lead bending type
PS8602L1-V
PS8602L2-V
8 pin DIP, lead bending type
(for long distance)
8 pin DIP, lead bending type
(for long distance)
Normal specification products
• UL Approved
VDE0884 specification products (option)
• VDE Approved
[Handling Precaution]
This product is weak for static electricity by designed with high speed integrated circuit. So, protect against static
electricity when handling.
Document No. P11651EJ2V0DS00 (2nd edition)
(Previous No. LC-2388)
Date Published July 1996 P
Printed in Japan
1995©
Page 2
PACKAGE DIMENSIONS (Unit: mm)
PS8602, PS8602L
DIP (Dual In-line Package)
PS8602
10.16 MAX.
85
6.5
14
3.8
MAX.
4.55
MAX.
0.65
2.8
MIN.
1.34
2.54
0.50 ± 0.10
PIN CONNECTIONS (Top View)
Output
8765
1234
Input
1. NC
2. Anode
3. Cathode
4. NC
5. Emitter
O
6. V
7. NC
CC
8. V
7.62
1.27
MAX.
0 to 15
M
0.25
Lead Bending type (Gull-wing)
PS8602L
10.16 MAX.
85
6.5
14
3.8 MAX.
2.54
o
1.34 ± 0.10
PIN CONNECTIONS (Top View)
Output
8765
1234
Input
1. NC
2. Anode
3. Cathode
4. NC
7.62
1.27
MAX.
9.60 ± 0.4
M
0.25
5. Emitter
O
6. V
7. NC
CC
8. V
0.05 to 0.2
0.9
± 0.25
PS8602L1
6.5
3.8
MAX.
4.25
MAX.
2.8
MIN.
10.16 MAX.
85
14
0.35
1.34
2.54
0.50 ± 0.10
1.27 MAX.
0.25
Lead Bending type (for long distance)
PS8602L2
10.16 MAX.
85
6.5
10.16
14
7.62
0.05 to 0.2
3.8 MAX.
1.27 MAX.
o
0 to 15
M
2.54
1.34 ± 0.10
0.25
11.8 ± 0.4
10.16
7.62
0.9 ± 0.25
M
2
Page 3
PS8602, PS8602L
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Diode
Forward Current I
Reverse Voltage V
Power Dissipation P
F
R
D
25 mA
5V
45 mW
Detector
Supply Voltage V
Output Voltage V
Output Current I
Power Dissipation P
Isolation Voltage
*1
Operating Temperature T
Storage Temperature T
*1
AC voltage for 1 minute at T
ELECTRICAL CHARACTERISTICS (TA = 25
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Diode Forward Voltage V
Reverse Current I
Forward Voltage Temperature
Coefficient
Junction Capacitance C
Detector High Level Output Current IOH 1 3 500 nA IF = 0 mA, VCC = VO = 5.5 V
High Level Output Current IOH 2 100
Low Level Output Voltage V
Low Level Supply Current I
High Level Supply Current I
Coupler Current Transfer Ratio CTR 15 % IF = 16 mA, VCC = 4.5 V,
Isolation Resistance R
Isolation Capacitance C
Propagation Delay Time
(H L)
Propagation Delay Time
(L H)
Common mode transient
immunity at high level
output
Common mode transient
immunity at low level
output
CC
O
O
C
BV 5 000 V
A
stg
A
= 25 C, RH = 60 % between input and output.
F
R
F
V
T
t
OL
CCL
CCH
1-2
1-2
PHL
t
35 V
35 V
8mA
100 mW
r.m.s.
55 to +100
55 to +150
C)
11
10
1.7 2.2 V IF = 16 mA
1.6 mV/CI
60 pF V = 0, f = 1 MHz
0.1 0.4 V IF = 16 mA, VCC = 4.5 V,
50
0.01 1
0.7 pF V = 0, f = 1 MHz
0.5 0.8
10
C
C
*2
PLH
t
0.3 0.8
*2
H
CM
2 000 V/sIF = 0 mA, VCM = 400 V
*3
L
CM
2 000 V/sI
*3
AVR = 5 V
F
= 16 mA
AIF = 0 mA, VCC = VO = 35 V
O
= 1.2 mA
I
AIF = 16 mA, VO = Open, VCC = 35 V
AIF = 0 mA, VO = Open, VCC = 35 V
O
= 0.4 V
V
in-out
V
= 1 kV
DC
sIF = 16 mA, VCC = 5 V
L
= 1.9 k
R
sIF = 16 mA, VCC = 5 V
L
= 1.9 k
R
L
= 4.1 k
R
F
= 16 mA, VCM = 400 V
L
= 4.1 k
R
3
Page 4
*2
Test Circuit for Propagation Delay Time.
Pulse Input
PW = 100 s
()
Duty Cycle = 1/10
µ
F
Monitor
I
I
51 Ω
F
18
27
36
45
V
CC
R
L
O
Monitor
V
= 5 V
PS8602, PS8602L
I
F
0
V
O
1.5 V
50 %
5 V
1.5 V
OL
V
*3
Test Circuit for Common mode transient immunity
1
I
F
2
8
7
36
4
5
V
CM
R
L
V
O
Monitor
VCC = 5 V
V
CM
10 % 90 %
r
t
V
O
(IF = 0 mA)
V
O
(I
F
= 16 mA)
PHL
t
t
PLH
400 V
10 %90 %
0 V
t
f
5 V
2 V
0.8 V
V
OL
4
Page 5
PS8602, PS8602L
TYPICAL CHARACTERISTICS (TA = 25
MAX. FORWARD CURRENT vs.
AMBIENT TEMPERATURE
30
20
10
IF - MAX. Forward Current - mA
0 25 50 75 100 125
A - Ambient Temperature - ˚C
T
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
10
100 ˚C
TA =
1.0
0.1
IF - Forward Current - mA
50 ˚C
25 ˚C
0 ˚C
–25 ˚C
C)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
120
100
80
60
40
20
PC - Transistor Power Dissipation - mW
0 25 50 75 100 125
T
A - Ambient Temperature - ˚C
OUTPUT CURRENT vs.
OUTPUT VOLTAGE
10
8
IF = 25 mA
6
4
IO - Output Current - mA
2
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
0.01
1.0
1.2 1.4 1.6 1.8 2.0 2.2 2.4
VF - Forward Voltage - V
CURRENT TRANSFER RATIO
vs. FORWARD CURRENT
50
VCC = 4.5 V
40
30
20
10
CTR - Current Transfer Raito - %
0
.1 .5 1 5 10 50 100
I
F - Forward Current - mA
VO = 0.4 V
TA = 25 ˚C
0
0 2 4 6 8 101214161820
VO - Output Voltage - V
NORMALIZED OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
∆
CTR - Current Transfer Raito
0.2
0.0
–75 –50 –25 0 25 50 75 100 125
TA - Ambient Temperature - ˚C
Normalized to
at TA = 25 ˚C
VCC = 4.5 V
VO = 0.4 V
IF = 16 mA
5
Page 6
PS8602, PS8602L
OUTPUT VOLTAGE vs.
FORWARD CURRENT
7
6
5
4
3
2
- Output Voltage - V
O
V
1
10 kΩ
0
02468101214161820
RL = 1.9 kΩ
5.6 kΩ
IF - Forward Current - (mA)
VCC = 5 V
V
I
F
PROPAGATION DELAY TIME
vs. LOAD RESISTANCE
10
µ
VCC = 5 V
F
= 16 mA
I
5
t
PLH
HIGH LEVEL OUTPUT CURRENT
vs. AMBIENT TEMPERATURE
1000
F
= 0
CC
L
R
I
100
10
VCC = VO = 35 V
CC
= VO = 5.5 V
1
- High Level Output Current - nA
OH
I
V
.1
–25 0 25 50 75 100
TA - Ambient Temperature - ˚C
PROPAGATION DELAY TIME
vs. AMBIENT TEMPERATURE
3.0
VCC = 5 V
µ
F
= 16 mA
I
2.5
L
= 1.9 kΩ
R
2.0
1
.5
t
PHL
- Propagation Delay Time - s
PLH
, t
PHL
t
.1
1 5 10 50 100
RL - Load Resistance - kΩ
1.5
1.0
t
PLH
- Propagation Delay Time - s
0.5
PLH
, t
PHL
t
0.0
–75 –50 –25 0 25 50 75 100 125
t
PHL
TA - Ambient Temperature - ˚C
6
Page 7
TAPING
1. TAPING DIRECTION
PS8602, PS8602L
PS8602L-E3
2. OUTLINE AND DIMENSIONS (TAPE)
P0
P2
D1
D0
P1
A
N 101
PS86××
NEC JAPAN
101
××
APAN
Unit: mm
T0
EF
I
W
T1
B
SYMBOL RATINGS
A 10.7 0.1
B 10.3 0.1
D0 1.55 0.1
D1 1.55 0.1
E 1.75 0.1
F 7.5 0.1
P0 4.0 0.1
P1 12.0 0.1
P2 2.0 0.1
T0 4.3 0.2
T1 0.3
W 16 0.3
3. OUTLINE AND DIMENSIONS (REEL)
2 ± 0.5
18.0 ± 0.5
φ
21 ± 0.8
φ
R1.0
4. PACKING; 1000 pieces/reel
Unit: mm
SYMBOL RATINGS
A 330
N 80 5.0
W
A
W 16.4
+2.0
0
7
Page 8
SOLDERING PRECAUTION
(1) Infrared reflow soldering
• Peak temperature : 235 C or lower (plastic surface)
• Time : 30 s or less
(Time during plastic surface temperature overs 210 C)
• No. of reflow times : Three
• Flux : Rosin-base flux
INFRARED RAY REFLOW TEMPERATURE PROFILE
PS8602, PS8602L
(ACTUAL HEAT)
to 10 s
235 ˚C MAX
210 ˚C
120 to 160 ˚C
PACKAGE’S SURFACE TEM (˚C)
60 to 90 s
(PRE-HEAT)
TIME (s)
to 30 s
<NOTES>
(1) Please avoid be removed the residual flux by water after the first reflow processes.
Peak Temperature 235 ˚C or lower
(2) Dip soldering
• Peak temperature : 260 C or lower
• Time : 10 s or less
• Flux : Rosin-base flux
8
Page 9
PS8602, PS8602L
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
PARAMETER SYMBOL SPECK UNIT
Application classification (DIN VDE0109)
for rated line voltages 300 V
for rated line voltages 600 V
eff
eff
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength maximum operating isolation voltage.
Test voltage (partial discharge test procedure a for type test and random test)
pr
= 1.2 U
U
IORM
, Pd < 5 pC
Test voltage (partial discharge test procedure b for random test)
pr
= 1.6 U
U
IORM
, Pd < 5 pC
Highest permissible overvoltage U
IORM
U
pr
U
pr
U
TR
Degree of pollution (DIN VDE0109) 2
Clearance distance > 7.0 mm
Creepage distance > 7.0 mm
Comparative tracking index (DIN IEC 112/VDE0303 part 1) CTI 175
Material group (DIN VDE0109) IIIa
Storage temperature range T
Operating temperature range T
stg
amb
Isolation resistance, minimum value
IO
= 500 V dc at 25 Cel
U
IO
= 500 V dc at T
U
amp maximum
at least 100 Cel
Ris min
Ris min
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Tsi
Isi
Psi
Isolation resistance
IO
= 500 V dc at 175 Cel (Tsi)
U
Ris min
IV
III
890
1 068
1 424 V
8 000 V
55 to +150 Cel
55 to +100 Cel
12
10
11
10
175
400
700
9
10
peak
V
peak
V
peak
peak
ohm
ohm
Cel
mA
mW
ohm
9
Page 10
PS8602, PS8602L
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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