AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*2
s, Duty Cycle = 1 %
µ
F
R
∆
PD/°C0.60.8mW/°C
D
FP
I
CEO
ECO
C
∆
PC/°C1.2mW/
C
50mA
6V
6080mW/ch
1A
80V
6V
50mA/ch
120mW/ch
BV2 500Vr.m.s.
A
stg
−
55 to +100
−
55 to +150
°
C
°
C
°
C
3
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
ParameterSymbolConditionsMIN.TYP.MAX.Unit
PS2801-1,PS2801-4
DiodeForward VoltageV
Reverse CurrentI
Terminal CapacitanceC
Transistor
Collector to Emitter
Dark Current
Coupled
Current Transfer Ratio
C/IF
)
(I
Collector Saturation
CTRI
V
Voltage
Isolation ResistanceR
Isolation CapacitanceC
Rise Time
Fall Time
Test circuit for switching time
*1
*1
*1
Pulse Input
PW = 100 s
Duty Cycle = 1/10
F
IF = 5 mA1.11.4V
R
VR = 5 V5
t
V = 0 V, f = 1.0 MHz30pF
CEO
I
VCE = 80 V, IF = 0 mA100nA
F
= 5 mA, VCE = 5 V80600%
CE(sat)IF
t
t
= 10 mA, IC = 2 mA0.3V
I-O
I-O
V
= 1.0 kV
I-O
V = 0 V, f = 1.0 MHz0.4pF
r
VCC = 5 V, IC = 2 mA, RL = 100
f
DC
Ω
10
11
3
5
VCC
µ
F
I
VOUT
50 Ω
RL = 100 Ω
µ
A
Ω
µ
s
4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
PS2801-1,PS2801-4
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
(mW)
D
75
50
PS2801-1
PS2801-4
0.6 mW/˚C
25
Diode Power Dissipation P
0
2550
Ambient Temperature T
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
TA = +100 ˚C
50
10
(mA)
F
5
1
0.5
Forward Current I
0.1
+60 ˚C
+25 ˚C
0.8 mW/˚C
75
A
(˚C)
0 ˚C
–25 ˚C
–55 ˚C
100
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
(mW)
C
150
100
PS2801-1
PS2801-4
1.2 mW/˚C
50
Transistor Power Dissipation P
250
50
Ambient Temperature T
75
A
( ˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
70
60
50
(mA)
C
40
30
20
Collector Current I
10
50 mA
20 mA
10 mA
IF = 5 mA
100
0.7
0.91.1
Forward Voltage V
F
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
(nA)
10 000
CEO
1 000
100
10
1
Collector to Emitter Dark Current I
–50–250100
Ambient Temperature T
VCE = 80 V
40 V
24 V
10 V
5 V
2550
A
(˚C)
75
1.40.81.01.21.3
1.5
0
428610
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
40
50 mA
20 mA
10
(mA)
C
5
10 mA
5 mA
2 mA
IF = 1 mA
1
0.5
Collector Current I
0.1
0.21.00.40.60.8
0
Collector Saturation Voltage V
CE(sat)
(V)
5
PS2801-1,PS2801-4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
A
= 25 ˚C,
0.2
0.0
Normalized Current Transfer Ratio CTR
–50
–252550
0
Ambient Temperature T
at T
F
= 5 mA, VCE = 5 V
I
A
(˚C)
SWITCHING TIME vs.
LOAD RESISTANCE
100
VCC = 5 V,
50
C
= 2 mA,
I
µ
10
5
CTR = 236 %
t
f
t
t
d
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
300
V
CE
= 5 V,
n = 3
250
200
150
100
50
Current Transfer Ratio CTR (%)
75
100
0.021000.11.010
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
VCC = 5 V,
F
= 5 mA,
I
CTR = 236 %
100
r
µ
10
t
f
t
s
1
Switching Time t ( s)
0.5
0.1
0.010.05 0.1
Load Resistance RL (kΩ)
FREQUENCY RESPONSE
0
–5
–10
–15
Normalized Gain Gv
–20
0.5210 20
1550
0.5
RL = 1 kΩ
Frequency f (kHz)
t
s
15
I
F
= 5 mA,
CE
V
10
= 5 V
100 Ω
300 Ω
200
500
100
1
Switching Time t ( s)
0.1
0.1110100
L
Load Resistance R
(kΩ)
LONG TERM CTR DEGRADATION
1.2
1.0
2
IF = 5 mA
A
= 25 ˚C
T
F
= 20 mA
I
A
= 25 ˚C
T
F
= 5 mA
I
A
= 60 ˚C
T
3
10
Time (Hr)
10
4
0.8
0.6
0.4
CTR (Relative Value)
0.2
0.0
10
10
t
t
r
d
TYP.
5
10
Remark
6
The graphs indicate nominal characteristics.
TAPING SPECIFICATIONS (in millimeters)
PS2801-1
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
4.0±0.1
1.55±0.1
3.3±0.1
1.75±0.1
7.5±0.1
16.0±0.3
PS2801-1,PS2801-4
2.5±0.1
7.5±0.1
0.3
Tape Direction
PS2801-1-F3PS2801-1-F4
1
1
1
1
1
104
104
104
104
104
Outline and Dimensions (Reel)
R 1.0
2.0±0.5
13.0±0.5
φ
φ
21.0±0.8
1041104110411041104
1
330
φ
100
φ
Packing: 3 500 pcs/reel
16.4
+2.0
–0.0
7
PS2801-4
PS2801-1,PS2801-4
Outline and Dimensions (Tape)
Tape Direction
2.0±0.1
4.0±0.1
1.55±0.1
PS2801-4-F3PS2801-4-F4
12.0±0.1
1.55±0.1
1.75±0.1
7.5±0.1
16.0±0.3
7.6±0.1
2.5±0.1
10.45±0.1
0.3
Outline and Dimensions (Reel)
R 1.0
Packing: 2 500 pcs/reel
2.0±0.5
13.0±0.5
φ
21.0±0.8
φ
330
φ
100
φ
16.4
+2.0
–0.0
8
PS2801-1,PS2801-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature235 °C (package surface temperature)
• Time of temperature higher than 210 °C30 seconds or less
• Number of reflowsThree
• FluxRosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Package Surface Temperature T (˚C)
Time (s)
Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature260 °C or below (molten solder temperature)
• Time10 seconds or less
• Number of timesOne
• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
9
PROGRAMMABLE LOGIC CONTROLLERS EXAMPLE
Purpose: In-out interface
PS2801-1,PS2801-4
COM
PS2801–1
PS2801–4
PD4050
Controller
Servo
Motor
Amplifier
Controller
Controller
Pulse Generator
Servo Motor
Driver Unit
Pulse Motor
Driver Unit
Xaxis
Sensor
Motor
Heater
AC.DC
MTGPG
Yaxis
Servo
Motor
M
CRT
PC
Printer
Terminal
Terminal
Printer
FDD
Memory
Cassette
Computer
Programmable Logic
Controller
Power Supply
Controller
10
[MEMO]
PS2801-1,PS2801-4
11
PS2801-1,PS2801-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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