Page 1
DATA SHEET
PHOTO COUPLERS
PS2631, PS2631L
HIGH COLLECTOR VOLTAGE 6PIN PHOTO COUPLER
DESCRIPTION
PS2631, PS2631L are optically coupled isolators containing a GaAs light emitting diode and a silicon photo
transistor.
PS2631 is in a plastic DIP (Dual In-line Package).
PS2631L is lead bending type (Gull-wing) for surface mount.
FEATURES
• High input to output isolation voltage. (BV: 5 kVr.m.s. MIN.)
• High collector to emitter voltage (VCEO). (VCEO: 200 V MIN.)
• High speed switching (t
• UL recognized [File No. E72422 (S)]
• Taping Product number (PS2631L-E3, E4)
r, tf = 10
µ
s TYP.)
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
• AC Line/Digital Logic ·················································· Isolate high voltage transient
• Digital Logic/Digital Logic··········································· Eliminate spurious ground loops
• Twisted Pair line receiver··········································· Eliminate ground loop pick-up
• Telephone/Telegraph line receiver ···························· Isolate high voltage transient
• High Frequency Power Supply Feedback Control···· Maintain floating ground
Document No. P11436EJ2V0DS00 (2nd editon)
(Previous No. LC-2261)
Date Published June 1996 P
Printed in Japan
©
1990
Page 2
PACKEGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package) Lead Bending type (Gull-wing)
PS2631 PS2631L
PS2631, PS2631L
10.16 MAX.
64
13
3.8
MAX.
0.65
2.8 MIN. 4.55 MAX.
1.34
2.54
0.50 ± 0.10
2.54
MAX.
0.25
PIN CONNECTION (Top View)
10.16 MAX.
64
7.62
6.5
M
0 to 15˚
13
3.8 MAX.
2.54
1.34 ± 0.10
2.54
MAX.
0.25
0.05 to 0.2
0.9 ± 0.25
9.60 ± 0.4
M
7.62
6.5
PS2631, PS2631L
2
645
132
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
Page 3
PS2631, PS2631L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Diode
Reverse Voltage VR 6V
Forward Current I
Power Dissipation Temperature Coefficient
Power Dissipation P
Transistor
Collector to Emitter Voltage V
Emitter to Collector Voltage V
Collector Current I
Power Dissipation Temperature Coefficient
Power Dissipation P
Isolation Voltage*
1)
Storage Temperature Tstg –55 to +150 °C
Operating Temperature T
*1) AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
F 80 mA
∆
PD/˚C 1.5 mW/˚C
D 150 mW
CEO 200 V
ECO 6V
C 50 mA
∆
PC/˚C 3.0 mW/˚C
C 300 mW
BV 5 000 Vac
opt –55 to +100 °C
CHARACTERISTIC
Diode Forward Voltage VF 1.1 1.4 V IF = 10 mA
Reverse Current IR 5
Capacitance Ct 50 pF V = 0, f = 1.0 MHz
Transistor Collector to Emitter Dark Current ICEO 200 nA VCE = 200 V, IF = 0
DC Current Gain hFE 300 IC = 2 mA, VCE = 5.0 V
Coupled Current Transfer Ratio*
Collector Saturation Voltage VCE(sat) 0.25 V IF = 10 mA, IC = 2.0 mA
Isolation Resistance R1-2 10
Isolation Capacitance C1-2 0.5 pF V = 0, f = 1.0 MHz
Rise Time*
Fall Time*
3)
3)
2)
SYMBOL
CTR (IC/IF)
tr 10
tf 10
MIN. TYP. MAX. UNIT TEST CONDITIONS
50 280 % IF = 5 mA, VCE = 5.0 V
11
µ
AVR = 5 V
Ω Vin-out = 1.0 kV
µ
s
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
µ
s
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
*2) CTR rank (%) *3) Test Circuit for Switching Time
K : 130 to 280
L : 80 to 150
Pulse input
M : 50 to 100
Pulse width = 100 s
Duty cycle = 1/10
µ
I
F
50
V
OUT
RL = 1 k
VCC = 5 V
Ω
3
Page 4
TYPICAL CHARACTERISTICS (TA = 25 °C)
PS2631, PS2631L
FORWARD CURRENT vs.
100
FORWARD VOLTAGE
50
10
(mA)
F
5
1
0.5
Forward Current I
0.1
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.7
Forward Voltage V
COLLECTOR TO EMITTER DARK CURRENT
vs. AMBIENT TEMPERATURE
10000
1000
(nA)
CEO
100
VCE = 200 V
10
Collector Cutoff Current I
1
20 V
10 V
F
40 V
(V)
100 ˚C
60 ˚C
25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
80 mA
60 mA
50 mA
40 mA
(mA)
CE
50
40
30 mA
30
20
Collector Current I
10
20 mA
15 mA
10 mA
IF = 5 mA
0252010530
Collector to Emitter Voltage V
15
CE
(V)
NORMALIZED OUTPUT CURRENT vs.
1.6
AMBIENT TEMPERATURE
1.4
1.2
1.0
0.8
0.6
CTR (Relative Value)
0.4
0.2
Normalized to 1.0
at T
A
= 25 ˚C
F
= 5 mA
I
V
CE
= 5 V
CTR (%)
4
–50 –25 0 25 50 75 100
Ambient Temperature TA (˚C)
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
240
220
200
180
160
140
120
100
CTR = 200%
CTR = 190 %
CTR = 120 %
80
60
40
CTR = 60%
20
0.1 1.0 10 1000.5 5.0 50
F
(mA)
I
VCE = 5 V
–50 –25 0 25 50 75 100
Ambient Temperature TA (˚C)
NORMALIZED OUTPUT CURRENT
vs. BASE RESISTANCE
1.0
20 mA
0.8
0.6
10 mA
IF = 5 mA
0.4
CTR (Relative Value)
0.2
100 k 1 M ∞500 k50 k
Base to Emitter Resistance R
B
(Ω)
Page 5
PS2631, PS2631L
RL = 1 kΩ
10 mA
t
f
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
50
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Power Dissipation P
D
(mW)
1.5 mW/˚C
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
200
100
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Power Dissipation P
C
(mW)
3.0 mW/˚C
t
s
t
d
t
r
IF = 10 mA
V
CC
= 5 V
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(kΩ)
1 5 10 50 100
1000
100
10
1
Switching Time ( s)
µ
50
5
0.5
10
1.0
0.1
0 0.2 0.4 0.6 0.8 1.0
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
IF = 5 mA
80 mA
40 mA
20 mA
1.0
0.8
0.6
0.4
0.2
0
500 1 k 5 k 10 k 50 k 100 k 500 k
Frequency (Hz)
FREQUENCY RESPONSE
RL = 100 Ω
Relative Output A
ν
5
Page 6
NOTES AT MOUNTING
(1) NOTES AT MOUNTING BY INFRARED REFLOW SOLDERING
• Peak temperature : 235 °C or less (resin surface temperature)
• Time : Within 30 sec. (
• Number of times of reflow : Three
• Flux : Rosin flux with little chlorine is recommended.
Reflow Temperature Profile
120 to 160 ˚C
timing during which resin surface temperature is 210 ˚C or more
(ACTUAL HEAT)
to 10 s
to 30 s
PS2631, PS2631L
)
235 ˚C MAX.
210 ˚C
Resin surface temperature (˚C)
60 to 90 s
Time (s)
<NOTES>
(1) Please avoid to be remove the residual flux by water after the first reflow processes.
Peak Temperature 235 ˚C or Lower
(2) NOTES AT MOUNTING BY DIP SOLDERING
• Temperature: 260 °C or less
• Time : Within 10 sec.
• Flux : Rosin flux with little chlorine is recommended.
6
Page 7
[MEMO]
PS2631, PS2631L
7
Page 8
PS2631, PS2631L
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
12
M4 94.11
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