Page 1
DATA SHEET
PHOTOCOUPLER
PS2511-1,-2,-4, PS2511L-1,-2,-4
HIGH ISOLATION VOLTAGE
STANDARD MULTI PHOTOCOUPLER SERIES
SINGLE TRANSISTOR TYPE
DESCRIPTION
The PS2511-1, -2, -4 and PS2511L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon phototransistor.
The PS2511-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2511L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 200 % TYP.)
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• Taping Product number : PS2511L-1-E3, E4, F3, F4, PS2511L-2-E3, E4
• UL approved : File No. E72422 (S)
−NEPOCTM Series−
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The information in this document is subject to change without notice.
Document No. P12975EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP(K)
Printed in Japan
©
1997
Page 2
PACKAGE DIMENSIONS (in millimeters)
DIP (Dual In-line Package)
PS2511-1,-2,-4, PS2511L-1,-2,-4
3.8
4.55
MAX.
2.8
MIN.
1.25±0.15
6.5
4.6 ± 0.35
6.5
MAX.
0.65
5.1 MAX.
PS2511-1
2.54
PS2511-1
7.62
0.50 ± 0.10
0.25
M
7.62
TOP VIEW
3
4
2
1
1. Anode
2. Cathode
3. Emitter
4. Collector
0 to 15˚
TOP VIEW
3
4
2
1
1. Anode
2. Cathode
3. Emitter
4. Collector
4.55
MAX.
2.8
MIN.
1.25±0.15
6.5
3.8
MAX.
0.65
2.54
6.5
PS2511-4
20.3 MAX.
0.50 ± 0.10
0.25
PS2511-2
10.2 MAX.
TOP VIEW
13
12
11
14
34
56
10 9
78
16 15
2
1
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
7.62
M
0 to 15˚
TOP VIEW
7
65
8
1
34
2
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
7.62
3.8
4.55
MAX.
2.8
MIN.
1.25±0.15
MAX.
0.65
2.54
0.50 ± 0.10
M
0.25
4.55
MAX.
2.8
MIN.
1.25±0.15
6.5
3.8
0.65
0 to 15˚
MAX.
2.54
PS2511-4
20.3 MAX.
0.50 ± 0.10
0.25
M
4.55
MAX.
2.8
MIN.
1.25±0.15
3.8
MAX.
0.65
2.54
7.62
0.50 ± 0.10
0.25
0 to 15˚
M
0 to 15˚
TOP VIEW
12
15
14
10
11
13
16
3
6
1
2
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
78
4
5
9
2
Page 3
Lead Bending Type (Gull-wing)
PS2511-1,-2,-4, PS2511L-1,-2,-4
3.8
MAX.
1.25±0.15
0.25
4.6 ± 0.35
6.5
M
5.1 MAX.
6.5
PS2511L-1
2.54
PS2511L-1
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
7.62
0.90 ± 0.25
9.60 ± 0.4
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
7.62
4
1
4
1
3
2
0.05 to 0.2
3
2
3.8
1.25±0.15
0.25
6.5
MAX.
M
2.54
6.5
PS2511L-4
20.3 MAX.
PS2511L-2
10.2 MAX.
TOP VIEW
13
12
16 15
14
2
34
56
1
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
7.62
0.90 ± 0.25
9.60 ± 0.4
TOP VIEW
65
7
8
34
1
2
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
7.62
11
10 9
78
0.05 to 0.2
3.8
MAX.
1.25±0.15
0.25
0.05 to 0.2
0.90 ± 0.25
M
9.60 ± 0.4
2.54
PS2511L-4
3.8
MAX.
1.25±0.15
0.25
0.90 ± 0.25
M
9.60 ± 0.4
2.54
TOP VIEW
12
15
14
11
13
16
10
0.05 to 0.2
9
20.3 MAX.
3
6
78
4
5
6.5
1
2
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
7.62
3.8
MAX.
1.25±0.15
0.25
0.90 ± 0.25
M
9.60 ± 0.4
0.05 to 0.2
2.54
3
Page 4
PS2511-1,-2,-4, PS2511L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2511-1,
PS2511L-1
PS2511-2,-4
PS2511L-2,-4
Diode Reverse Voltage V
Forward Current (DC) I
R
F
6V
50 mA
Power Dissipation Derating∆PD/°C 0.7 0.55 mW/°C
I
CEO
ECO
D
FP
70 55 mW/ch
1A
40 V
5V
C
40 mA
Power Dissipation P
Peak Forward Current
*1
Transistor Collector to Emitter Voltage V
Emitter to Collector Vo lta g e V
Collector Current I
Power Dissipation Derating∆PC/°C 1.5 1.2 mW/°C
Power Dissipation P
Isolation Voltage
*2
Operating Ambient Temperature T
Storage Temperature T
PW = 100
*1
AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*2
µ
s, Duty Cycle = 1 %
C
150 120 mW/ch
BV 5 000 Vr.m.s.
A
stg
−
55 to +100
−
55 to +150
°
C
°
C
4
Page 5
ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
PS2511-1,-2,-4, PS2511L-1,-2,-4
Diode Forward Voltage V
Reverse Current I
Terminal Capacitance C
Transistor
Collector to Emitter
Dark Current
Coupled Current Transfer Ratio
*1
C/IF
)
(I
CTR IF = 5 mA, VCE = 5 V 80 200 400 %
Collector Saturation Voltage V
Isolation Resistance R
Isolation Capacitance C
Rise Time
Fall Time
CTR rank (PS2511-1,PS2511L-1 only)
*1
*2
*2
D : 100 to 300 %
F
IF = 10 mA 1.2 1.4 V
R
VR = 5 V 5
t
V = 0 V, f = 1.0 MHz 50 pF
CEO
I
VCE = 40 V, IF = 0 mA 100 nA
CE(sat)IF
= 10 mA, IC = 2 mA 0.3 V
I-O
I-O
V
= 1.0 kV
I-O
V = 0 V, f = 1.0 MHz 0.5 pF
r
t
VCC = 10 V, IC = 2 mA, RL = 100
f
t
DC
Ω
Test Circuit for Switching Time
*2
Pulse Input
PW = 100 s
µ
10
I
11
3
5
F
Duty Cycle = 1/10
In monitor
50 Ω
V
V
RL = 100 Ω
CC
OUT
µ
A
Ω
µ
s
5
Page 6
PS2511-1,-2,-4, PS2511L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °°°°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
75
(mW)
D
50
PS2511-2
PS2511L-2
PS2511-4
PS2511L-4
25
Diode Power Dissipation P
0255075
Ambient Temperature TA (˚C)
PS2511-1
PS2511L-1
0.55 mW/˚C
0.7 mW/˚C
100
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
10
T
A
(mA)
F
1
0.1
Forward Current I
0.01
= +100 ˚C
+60 ˚C
+25 ˚C
–25 ˚C
–50 ˚C
0.0 0.5 1.0 1.5 2.0
Forward Voltage VF (V)
125 150
0 ˚C
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
(mW)
C
100
PS2511-2
PS2511L-2
PS2511-4
PS2511L-4
50
Transistor Power Dissipation P
25 50 75 100 125 1500
Ambient Temperature TA (˚C)
PS2511-1
PS2511L-1
1.2 mW/˚C
1.5 mW/˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
40
(mA)
C
30
20
10
Collector Current I
50 mA
20 mA
10 mA
5 mA
IF = 1 mA
6108420
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
(nA)
CEO
1 000
100
10
1
0.1
0.01
Collector to Emitter Dark Current I
–50 –25 0 25 50 75 100
VCE = 80 V
40 V
25 V
10 V
5 V
Ambient Temperature TA (˚C)
6
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
(mA)
C
10
1
Collector Current I
0.1
.0
0 0.2 0.4 0.6 0.8 1.0
Collector Saturation Voltage V
50 mA
20 mA
10 mA
5 mA
I
F
= 1 mA
CE(sat)
2 mA
(V)
Page 7
PS2511-1,-2,-4, PS2511L-1,-2,-4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
A
= 25 ˚C,
0.2
Normalized Current Transfer Ratio CTR
0.0
–50
–25 0 25 50 75 100
Ambient Temperature T
at T
F
= 5 mA, VCE = 5 V
I
A
(˚C)
SWITCHING TIME vs.
LOAD RESISTANCE
100
I
C
= 2 mA,
V
CC
= 10 V,
CTR = 220 %
µ
10
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
300
VCE = 5 V
250
200
150
100
50
Current Transfer Ratio CTR (%)
0
0.01 0.1 1 10 100
Forward Current I
F
(mA)
SWITCHING TIME vs.
LOAD RESISTANCE
1 000
IF = 5 mA,
V
CC
= 5 V,
t
f
t
r
100
µ
CTR = 220 %
t
f
t
s
1
Switching Time t ( s)
0.1
10010
Load Resistance R
1 k
L
(Ω)
FREQUENCY RESPONSE
0
V
–5
–10
–15
Normalized Gain G
–20
0.5 1 2 5 10 20 50 100200 500
Frequency f (kHz)
RL = 1 kΩ
t
d
t
s
I
C
= 1 mA,
CC
= 5 V
V
300 Ω
100 Ω
10 k
10
1
Switching Time t ( s)
0.1
10 100 1 k 10 k 100 k
Load Resistance RL (Ω)
LONG TERM CTR DEGRADATION
1.2
I
F
= 5 mA (TYP.)
1.0
0.8
0.6
0.4
CTR (Relative Value)
0.2
0
10
2
TA = 25 ˚C
A
= 60 ˚C
T
3
10
Time (Hr)
10
4
10
t
r
t
d
5
Remark
The graphs indicate nominal characteristics.
7
Page 8
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
8.0±0.1
Tape Direction
1.55±0.1
5.6±0.1
PS2511-1,-2,-4, PS2511L-1,-2,-4
1.75±0.1
7.5±0.1
16.0±0.3
4.3±0.2
10.3±0.1
0.3
PS2511L-1-E3
PS2511L-1-F3
Outline and Dimensions (Reel)
R 1.0
2.0±0.5
φ
13.0±0.5
21.0±0.8
φ
PS2511L-1-E4
PS2511L-1-F4
φ
PS2511L-1-E3, E4: 250
φ
80.0±5.0
φ
PS2511L-1-F3, F4: 330
+2.0
16.4
–0.0
Packing: PS2511L-1-E3, E4 1 000 pcs/reel
PS2511L-1-F3, F4 2 000 pcs/reel
8
Page 9
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
12.0±0.1
Tape Direction
1.55±0.1
10.4±0.1
PS2511-1,-2,-4, PS2511L-1,-2,-4
1.75±0.1
7.5±0.1
16.0±0.3
4.3±0.2
10.3±0.1
0.3
PS2511L-2-E3 PS2511L-2-E4
Outline and Dimensions (Reel)
R 1.0
2.0±0.5
13.0±0.5
φ
21.0±0.8
φ
330
φ
80.0±5.0
φ
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
9
Page 10
PS2511-1,-2,-4, PS2511L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Package Surface Temperature T (˚C)
Time (s)
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
10
Page 11
[MEMO]
PS2511-1,-2,-4, PS2511L-1,-2,-4
11
Page 12
PS2511-1,-2,-4, PS2511L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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