Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
page
M3D121
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
Page 2
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
• Hermetically sealed glass SMD
package.
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
• Polarity protection.
handbook, halfpage
Fig.1 Simplified outline (SOD87) and symbol.
ka
MAM190
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
PRLL5817 817 PH
PRLL5818 818 PH
PRLL5819 819 PH
1996 May 03 2
Page 3
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RSM
V
RRM
V
RWM
I
F(AV)
I
FSM
T
stg
T
j
continuous reverse voltage
PRLL5817
PRLL5818
PRLL5819
non-repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
repetitive peak reverse voltage
PRLL5817
PRLL5818
PRLL5819
crest working reverse voltage
PRLL5817
PRLL5818
PRLL5819
average forward current T
=60°C −
amb
non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
prior to surge: VR=0
j max
storage temperature
junction temperature
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
20 V
30 V
40 V
24 V
36 V
48 V
20 V
30 V
40 V
20 V
30 V
40 V
1A
25 A
+175 °C
125 °C
1996 May 03 3
Page 4
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
F
I
R
C
d
forward voltage see Fig.2
PRLL5817 I
= 0.1 A
F
I
=1A
F
=3A
I
F
forward voltage see Fig.2
PRLL5818 I
= 0.1 A
F
=1A
I
F
=3A
I
F
forward voltage see Fig.2
PRLL5819 I
reverse current VR=V
= 0.1 A
F
=1A
I
F
=3A
I
F
RRMmax
V
R=VRRMmax
; note 1
; Tj= 100 °C
diode capacitance VR=4V; f=1MHz
PRLL5817
PRLL5818
PRLL5819
−−
−−
−−
−−
−−
−−
−−
−−
−−
320
450
750
330
550
875
340
600
900
− 0.5 1
− 510
−
−
−
70
50
50
−
−
−
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
pF
pF
pF
Note
1. Pulsed test: t
= 300 µs; δ = 0.02.
p
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
Note
1. Refer to SOD87 standard mounting conditions.
1996 May 03 4
Page 5
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
GRAPHICAL DATA
handbook, halfpage
5
I
F
(A)
4
3
2
1
0
01
Tj = 125 oC
0.5 VF (V)
Fig.2 Typical forward voltage.
MBE634
25 oC
1
2.5 1.57
a = 3
P
F(AV)
(W)
0.5
0
0 0.5 1.5
2
1
1.42 1
I
F(AV)
MBE642
(A)
Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
1996 May 03 5
2
Page 6
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
(A)
MBE641
2
1
a = 3 2.5 1.57 1.42 12
P
F(AV)
(W)
0.5
0
0 0.5 1.5
1
I
F(AV)
Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
(A)
MBE643
2
1
a = 3 2.5 1.57 1.42 12
P
F(AV)
(W)
0.5
0
0 0.5 1.5
1
I
F(AV)
Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)/IF(AV).
1996 May 03 6
Page 7
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
V
RWM
δ = 0.2
δ = 0.5
MBE635
200
T
j
(oC)
100
0
020
V
R
10 VR (V)
Fig.6 PRLL5817. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
MBE640
V
V
0
020
P
(W)
0.05
0.1
R
RWM
δ = 0.5
R
δ = 0.2
10 VR (V)
Fig.7 PRLL5817. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
200
T
j
(oC)
100
0
040
V
RWM
δ = 0.2
V
R
δ = 0.5
20 VR (V)
MBE636
Fig.8 PRLL5818. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
1996 May 03 7
MBE638
V
RWM
V
δ = 0.5
0.1
P
R
(W)
0.05
0
040
R
δ = 0.2
20 VR (V)
Fig.9 PRLL5818. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
Page 8
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
V
RWM
δ = 0.2
δ = 0.5
MBE637
200
T
j
(oC)
100
0
020
V
R
10 VR (V)
Fig.10 PRLL5819. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
MBE639
V
V
0.1
P
R
(W)
0.05
0
040
R
RWM
δ = 0.5
20 VR (V)
δ = 0.2
Fig.11 PRLL5819. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
1996 May 03 8
Page 9
Philips Semiconductors Product specification
Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819
PACKAGE OUTLINE
andbook, full pagewidth
Dimensions in mm.
O
MBA505
D =
2.05
0.05
0.3
3.5 0.2
O
D1 =
1.9
0.1
Fig.12 SOD87.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 9
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