Datasheet PRLL5817, PRLL5818, PRLL5819 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

page

M3D121

PRLL5817; PRLL5818; PRLL5819

Schottky barrier diodes

Product specification
Supersedes data of 1996 May 03

1999 Apr 22

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

FEATURES

• Low switching losses

• Fast recovery time

• Guard ring protected

• Hermetically sealed glass SMD

package.

APPLICATIONS

• Low power, switched-mode power
supplies

• Rectifying

• Polarity protection.

handbook, halfpage

Fig.1 Simplified outline (SOD87) and symbol.

ka

MAM190

DESCRIPTION

The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating Implotec

TM(1)

technology.

(1) Implotec is a trademark of Philips.

MARKING

TYPE NUMBER MARKING CODE

PRLL5817 9
PRLL5818 9
PRLL5819 9

1999 Apr 22 2

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

V

RSM

V

RRM

V

RWM

I

F(AV)

I

FSM

T

stg

T

j

continuous reverse voltage

PRLL5817
PRLL5818
PRLL5819

non-repetitive peak reverse voltage

PRLL5817
PRLL5818
PRLL5819

repetitive peak reverse voltage

PRLL5817
PRLL5818
PRLL5819

crest working reverse voltage

PRLL5817
PRLL5818
PRLL5819

average forward current T

=60°C −

amb

non-repetitive peak forward current t = 10 ms half sine wave;

Tj=T

prior to surge: VR=0

j max

storage temperature
junction temperature

−

−

−

−

−

−

−

−

−

−

−

−

−

−65

−

20 V
30 V
40 V

24 V
36 V
48 V

20 V
30 V
40 V

20 V
30 V
40 V
1A
25 A

+175 °C
125 °C

1999 Apr 22 3

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

V

F

V

F

I

R

C

d

forward voltage see Fig.2

PRLL5817 I

= 0.1 A

F

I

=1A

F

=3A

I

F

forward voltage see Fig.2

PRLL5818 I

= 0.1 A

F

=1A

I

F

I

=3A

F

forward voltage see Fig.2

PRLL5819 I

reverse current VR=V

= 0.1 A

F

I

=1A

F

I

=3A

F

RRMmax

V

R=VRRMmax

; note 1
; Tj= 100 °C

diode capacitance VR= 4 V; f = 1 MHz

PRLL5817
PRLL5818
PRLL5819

−−

−−

−−

−−

−−

−−

−−

−−

−−

320
450
750

330
550
875

340
600
900

− 0.5 1

− 510

−

−

−

70
50
50

−

−

−

mV
mV
mV

mV
mV
mV

mV
mV
mV
mA
mA

pF
pF
pF

Note

1. Pulse test: t

= 300 µs; δ = 0.02.

p

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 150 K/W

Note

1. Refer to SOD87 standard mounting conditions.

1999 Apr 22 4

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

GRAPHICAL DATA

handbook, halfpage

5

I

F

(A)

4

3

2

1

0

01

Tj = 125 oC

0.5 VF (V)

Fig.2 Typical forward voltage.

MBE634

25 oC

1

2.5 1.57

a = 3

P

F(AV)

(W)

0.5

0

0 0.5 1.5

2

1

1.42 1

I

F(AV)

MBE642

(A)

Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward

current; a = I

F(RMS)/IF(AV).

1999 Apr 22 5

2

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

(A)

MBE641

2

1

a = 3 2.5 1.57 1.42 12

P

F(AV)

(W)

0.5

0

0 0.5 1.5

1

I

F(AV)

Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward

current; a = I

F(RMS)/IF(AV).

(A)

MBE643

2

1

a = 3 2.5 1.57 1.42 12

P

F(AV)

(W)

0.5

0

0 0.5 1.5

1

I

F(AV)

Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward

current; a = I

F(RMS)/IF(AV).

1999 Apr 22 6

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

V

RWM

δ = 0.2

δ = 0.5

MBE635

200

T

j

(oC)

100

0

020

V

R

10 VR (V)

Fig.6 PRLL5817. Maximum permissible junction

temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.

MBE640

V

V

0

020

P

(W)

0.05

0.1

R

RWM

δ = 0.5

R

δ = 0.2

10 VR (V)

Fig.7 PRLL5817. Reverse power dissipation as a

function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.

200

T

j

(oC)

100

0

040

V

RWM

δ = 0.2

V

R

δ = 0.5

20 VR (V)

MBE636

Fig.8 PRLL5818. Maximum permissible junction

temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.

1999 Apr 22 7

MBE638

V

RWM

V

δ = 0.5

0.1

P

R

(W)

0.05

0

040

R

δ = 0.2

20 VR (V)

Fig.9 PRLL5818. Reverse power dissipation as a

function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

V

RWM

δ = 0.2

δ = 0.5

MBE637

200

T

j

(oC)

100

0

020

V

R

10 VR (V)

Fig.10 PRLL5819. Maximum permissible junction

temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.

MBE639

V

V

0.1

P

R

(W)

0.05

0

040

R

RWM

δ = 0.5

20 VR (V)

δ = 0.2

Fig.11 PRLL5819. Reverse power dissipation as a

function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.

1999 Apr 22 8

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

PACKAGE OUTLINE

Hermetically sealed glass surface mounted package;

TM(1)

Implotec

DIMENSIONS (mm are the original dimensions)

UNIT

mm

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

OUTLINE

VERSION

technology; 2 connectors

D

2.1

2.0

SOD87 100H03

D1

2.0

1.8

3.7

3.3

IEC JEDEC EIAJ

H

L

0.3

REFERENCES

ka

(2)

DD

1

LL

H

0 1 2 mm

scale

EUROPEAN

PROJECTION

SOD87

ISSUE DATE

99-03-31

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 22 9

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

NOTES

1999 Apr 22 10

Philips Semiconductors Product specification

Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

NOTES

1999 Apr 22 11

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