Datasheet PRF949 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

M3D173

DATA SHEET

PRF949

UHF wideband transistor

Preliminary specification 1999 Oct 29

Philips Semiconductors Preliminary specification

UHF wideband transistor PRF949

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT416
(SC75) package. The transistor is primarily intended for
wideband applications in the GHz-range in the RF front
end of analog and digital cellular telephones, cordless
phones, radar detectors, pagers and satellite TV-tuners.

QUICK REFERENCE DATA

PINNING SOT416 (SC75)

PIN DESCRIPTION

1base
2 emitter
3 collector

handbook, halfpage

12

Marking code: V0

3

Fig.1 Simplified outline (SOT416).

MAM337

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

re

f

T

G

UM

NF noise figure Γ

feedback capacitance IC=0; VCB=6V; f=1MHz − 0.3 tbf pF
transition frequency IC=15mA; VCE=6V; fm=1GHz 7 9 − GHz
maximum unilateral power gain IC=15mA; VCE=6V;

T

=25°C; f = 1 GHz

amb

= Γ

S

; IC=5mA; VCE=6V;

opt

− 16 − dB

− 1.5 2.5 dB

f=1GHz
P
R

tot

th j-s

total power dissipation Ts=90°C; note 1 −−180 mW
thermal resistance from junction

P

= 180 mW −−335 K/W

tot

to soldering point

Note

is the temperature at the soldering point of the collector pin.

1. T

s

1999 Oct 29 2

Philips Semiconductors Preliminary specification

UHF wideband transistor PRF949

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

C(AV)

P

tot

T

stg

T

j

Note

1. T

s

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
DC collector current − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 250 mW
storage temperature −65 +150 °C
junction temperature − 175 °C

is the temperature at the soldering point of the collector pin.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction

P

= 180 mW; Ts=90°C; note 1 335 K/W

tot

to soldering point

Note

1. T

is the temperature at the soldering point of the collector pin.

s

1999 Oct 29 3

Philips Semiconductors Preliminary specification

UHF wideband transistor PRF949

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC characteristics

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

V

BEF

I

CBO

I

EBO

h

FE

AC characteristics

C

re

f

T

2

|s

|

21

G

UM

NF noise figure Γ

collector-base breakdown voltage IC=100µA; IE=0 20 −−V
collector-emitter breakdown

IC=100µA; IB=0 10 −−V

voltage
emitter-base breakdown voltage IE=10µA; IC=0 1.5 −−V
forward base-emitter voltage IE=25mA −−1.05 V
collector-base leakage current VCB=10V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC=5mA; VCE= 6 V 100 150 200

=15mA; VCE=6V − 150 −

I

C

feedback capacitance IC=0; VCB=6V; f=1MHz − 0.3 tbf pF
transition frequency IC=15mA; VCE=6V; fm=1GHz 7 9 − GHz
insertion gain IC=15mA; VCE= 6 V; f = 1 GHz 13 15 − dB
maximum unilateral power gain;

note 1

IC=15mA; VCE=6V;
T

=25°C; f = 1 GHz

amb

I

=15mA; VCE=6V;

C

=25°C; f = 2 GHz

T

amb

= Γ

S

; IC=5mA; VCE=6V;

opt

− 16 − dB

− 10 − dB

− 1.5 2.5 dB

f=1GHz

= Γ

Γ

S

; IC=5mA; VCE=6V;

opt

− 2.1 − dB

f=2GHz

Note

1. G

is the maximum unilateral power gain, assuming s12 is zero.

UM

G

UM

--------------------------------------------------------

10

1s

–()1s

2

s

21

2

11

–()

22

dBlog=

2

1999 Oct 29 4

Philips Semiconductors Preliminary specification

UHF wideband transistor PRF949

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT416

D

v M

A

3

12

e

b

1

p

e

w M

B

E

H

E

A

A

1

detail X

AB

L

p

X

Q

c

0 0.5 1 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

0.95

mm

0.60

OUTLINE
VERSION

SOT416 SC-75

max

0.1

b

cD

p

0.30

0.25

0.10

1.8

1.4

0.15

IEC JEDEC EIAJ

e

E

0.9
1

0.7

REFERENCES

0.5

e

H

L

Qw

1

1.75

1.45

p

E

0.45

0.23

0.15

0.13

v

0.2

0.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

1999 Oct 29 5

Philips Semiconductors Preliminary specification

UHF wideband transistor PRF949

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Oct 29 6

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1999

Internet: http://www.semiconductors.philips.com

68

Printed in The Netherlands 125006/03/pp7 Date of release: 1999 Oct 29 Document order number: 9397 750 06402