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Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
For optical control systems
PNZ107F
ø4.6±0.15
Unit : mm
Glass window
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : tr = 8 µs (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
* PNZ108F only
V
CEO
*
V
CBO
V
ECO
*
V
EBO
C
P
C
T
opr
stg
150 mW
–25 to +85 ˚C
–30 to +100 ˚C
20 V
30 V
3V
5V
30 mA
PNZ108F
4.5±0.2
12.7 min.
1.0±0.15
4.5±0.2
12.7 min.
1.0±0.2
12
ø5.75 max.
ø4.6±0.15
2-ø0.45±0.05
2.54±0.25
45±3˚
Glass window
3-ø0.45±0.05
2.54±0.25
1: Emitter
2: Collector
Unit : mm
1.0±0.15
ø5.75 max.
1.0±0.2
45±3˚
3
1
2
1: Emitter
2: Base
3: Collector
1
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PNZ107F, PNZ108F Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
CEO
CE(L)
Peak sensitivity wavelength
Acceptance half angle θ
Rise time t
Fall time t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
V
CE(sat)ICE(L)
VCE = 10V 0.05 2 µA
VCE = 10V, L = 100 lx
λ
VCE = 10V 900 nm
P
Measured from the optical axis to the half power point
*2
VCC = 10V, I
r
*2
RL = 100Ω 9 µs
f
CE(L)
= 1mA, L = 1000 lx
*1
0.4 4 mA
40 deg.
= 5mA 8 µs
*1
0.3 0.6 V
Sig.IN
50Ω R
200
160
(mW)
C
120
80
40
P
— Ta
C
V
CC
L
Collector power dissipation P
0
0 20406080100
– 20
Ambient temperature Ta (˚C )
Sig.OUT
(Input pulse)
(Output pulse)
(mA)
CE(L)
Collector photo current I
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
I
CE(L)
900 lx
t
f
10%
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
— V
CE
Ta = 25˚C
T = 2856K
700 lx800 lx
600 lx
500 lx
400 lx
300 lx
200 lx
100 lx
50 lx
10 lx
2
10
10
(mA)
CE(L)
1
–1
10
Collector photo current I
–2
10
1
Illuminance L (lx)
t
d
t
r
12
1000 lx
L =
10
1500 lx
8
6
4
2
0
02016812424
Collector to emitter voltage VCE (V)
I
— L
CE(L)
10 10
V
= 10V
CE
Ta = 25˚C
T = 2856K
2
3
10
2
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Phototransistors PNZ107F, PNZ108F
I
— Ta
2
10
10
(µA)
1
CEO
–1
10
Dark current I
–2
10
–3
10
– 20 0 40 8020 60 100
CEO
VCE = 10V
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
10
(mA)
CE(L)
1
Collector photo current I
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
4
10
30˚
40˚
50˚
60˚
70˚
80˚
90˚
3
10
(µs)
r
2
10
10
Rise time t
1
–1
10
–2
Collector photo current I
I
CE(L)
— Ta
VCE = 10V
L = 100 lx
T = 2856K
Spectral sensitivity characteristics
100
= 10V
V
CE
Ta = 25˚C
80
60
40
Relative sensitivity S (%)
20
0
400 600 800 1000 1200
200
Wavelength λ (nm)
t
— I
r
CE(L)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
–1
10
10 10
110
CE(L)
2
(mA)
4
10
3
10
(µs)
2
f
10
10
Fall time t
1
–1
10
–2
Collector photo current I
t
— I
f
CE(L)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
–1
10
10 10
110
CE(L)
2
(mA)
3
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