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Description
The enhancement mode MOS is extremely high density cell and low
on-resistance.
MOSFET Product Summary
VDS(V)
45
R
(mΩ)
DS(on)
100@ V
110@ VGS=4.5V
160@ VGS=2.5V
GS
=10V
ID(A)
2
2.5V Drive N-Channel MOSFET
Absolute maximum rating@25℃
PNMT45V2
D（3）
G（1）
S（2）
Rating Symbol Value Units
Drain-Source Voltage VDS 45 V
Gate-Source Voltage VGS ±12 V
Drain Current
Source current(Body
diode)
Total Power Dissipation PD 1.0 W
Channel temperature Tch 150 °C
Range of storage temperature Tstg -55 to +150 °C
Continuous I
Pulsed ID 8 A
Continuous I
Pulsed ISP 8 A
2.0 A
D
0.8 A
S
Thermal resistance
Parameter Symbol Limits Units
Channel to ambient Rth(ch-a)* 125 ℃/W
Body diode characteristics(Source-drain)(Ta=25℃)
Parameter Symbol Min. Typ. Max. Units Conditions
Forward voltage VSD -- -- 1.2 V IS=0.8A,VGS=0V
Rev.06 1 www.prisemi.com
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2.5V Drive N-Channel
)
MOSFET PNMT45V2
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Body Leakage Current I
Gate Threshold Voltage V
Static Drain-Source On-Resistance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time t
Rise time tr -- 15 -- ns
Turn-Off Delay Time t
Fall time tf -- 10 -- ns
I
DSS
V
DSS
GSS
V
GS(th)
=1mA,VGS=0V 45 - V
D
=45V,VGS=0V - - 1 μA
DS
=0V,VGS=12V
V
DS
=10V, ID =1mA 0.5 1.5 V
DS
- - 1 μA
VGS=10V, ID =2.0A - 100 130 mΩ
DS(ON)
VGS=4.5V, ID =2.0A - 110 150 mΩ
VGS=2.5V, ID =2.0A - 160 220 mΩ
DYNAMIC PARAMETERS
ISS
- 30 pF
DSS
- 20 pF
RSS
VGS=0V, V
DS
f=1MHz
=10V,
- 240 pF
SWITCHING PARAMETERS
d(on)
=25V, V
V
DS
R
=25Ω, RG=10Ω,
- 15 -- ns
d(off)
L
I
=1.0A
D
=4.5V,
GS
- 6 -- ns
Total gate charge Qg
Gate-source charge Qgs -- 0.7 -- nC
VDS=25V, V
=4.5V,
GS
RL=12.5Ω, RG=10Ω,
-- 2.9 4.1 nC
ID =2.0A
Gate-drain charge Qgd -- 0.9 -- nC
Typical Characteristics
5.0
0.30
0.24
On-Resistance (Ω)
DS(ON)
R
0.18
0.12
0.06
VGS=4.5V
VGS=10V
0
2
ID -Drain Current (A
4 6 10
8
10
=10 thru 5V
V
GS
8
6
4
-Drain Current (A)
D
I
2
0
0.0
1.0
2.0
VDS -Drain-Source Voltage (V)
3.0
VGS=4V
VGS=2V
4.0
Fig 1. Output characteristics Fig 2. Drain-Source On-Resistance
Rev.06 2 www.prisemi.com
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)
)
)
)
)
2.5V Drive N-Channel
MOSFET PNMT45V2
4
2.0
50
VGS=10V
V
GS
ID=2A
100
=4.5V
1.7
2.8
1.4
1.1
Normalized On-Resistance
0.8
0.5
-50
0
TJ-Junction Temperature (℃
3
TC=125℃
2
T
=25℃
0.7
C
=-55℃
T
C
1.4
-Drain Current (A)
D
I
1
0
0 2.1
VGS -Gate-Source Voltage (V
Fig 3. Transfer Characteristics Fig 4. Drain-Source On-Resistance
0.30
360
I
=2A
On-Resistance (mΩ)
DS(ON)
R
0.25
0.20
0.15
0.10
D
TJ=125℃
TJ=25℃
3
VGS -Gate-Source Voltage (V
Fig 5. R
6
DS(ON)
vs. V
5 7 9
4
8
Fig 6. Capacitance vs. VDS
GS
10
300
240
C
ISS
180
120
C-Capacitance (pF)
60
C
OSS
C
RSS
0
0
20
V
-Drain-Source Voltage (V
DS
40
100
10
R
DS(ON)
Limited
100us
1ms
-Drain Current (A)
D
I
1
TA=25℃
Single Pulse
0.1
VDS-Drain-Source Voltage:(V
BV
1100.1
DSS
Figure 7. Safe Operation Area
10ms
100ms
1s,10s
DC
Limited
100
Rev.06 3 www.prisemi.com
150
60
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q
)
2.5V Drive N-Channel
t (t), Normalized Effective Transient
1
Duty Cycle=0.5
0.2
0.1
0.1
0.05
Thermal Impedance
0.01
0.0001
0.02
Single Pulse
0.001
Fig 8.Normalized Maximum Transient Thermal Impedance
Product dimension(SOT-23)
MOSFET PNMT45V2
Notes:
P
DM
t1
t2
Zth
t1
t2
(t)
JA
600
(3)
0.01
A
0.1 1 10 100
S
uare Wave Pulse Duration(sec
1. Duty Cycle, D=
2. Per Unit Base=RthJA=100℃/W
3.T
JM-TA=PDM
4.Surface Mounted
θ
B
C
(1) (2)
D
E F
J
L
K
Rev.06 4 www.prisemi.com
H
G
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a b a
b
c d
2.5V Drive N-Channel
MOSFET PNMT45V2
Millimeters Inches
Dim
MIN MAX MIN MAX
A 2.80 3.04 0.1102 0.1197
B 1.20 1.40 0.0472 0.0551
C 2.10 2.50 0.0830 0.0984
D 0.89 1.02 0.0350 0.0401
E 0.45 0.60 0.0177 0.0236
F 1.78 2.04 0.0701 0.0807
G 0.085 0.177 0.0034 0.0070
H 0.45 0.60 0.0180 0.0236
J 0.37 0.50 0.0150 0.0200
K 0.89 1.11 0.0350 0.0440
L 0.013 0.100 0.0005 0.0040
θ
0° 10° 0° 10°
Dim
a -- 0.7
b -- 1.2
c -- 2.04
d -- 2.2
Millimeters
MIN MAX
Ordering information
Device Package Shipping
PNMT45V2 SOT-23 (Pb-Free) 3000 / Tape & Reel
Rev.06 5 www.prisemi.com
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2.5V Drive N-Channel
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reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices,
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
MOSFET PNMT45V2
IMPORTANT NOTICE
Should you
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For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
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