Datasheet PN4416, PN4416A Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

PN4416; PN4416A

N-channel field-effect transistor

Product specification
File under Discrete Semiconductors, SC07

December 1997

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

FEATURES

• Low noise

• Interchangeability of drain and

source connections

• High gain.

DESCRIPTION

N-channel symmetrical silicon
junction FETs in a SOT54 envelope.
These devices are intended for use in
VHF/UHF amplifiers, oscillators and
mixers.

PINNING - SOT54 (TO-92).

PIN DESCRIPTION

1 gate
2 source
3 drain

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

drain-source voltage

PN4416 − 30 V
PN4416A − 35 V

I

DSS

P

tot

drain current VDS = 15 V; VGS = 0 5 15 mA
total power

up to T

= 25 °C − 400 mW

amb

dissipation

V

GS(off)

gate-source cut-off
voltage

VDS = 15 V;

= 1 nA

I

D

PN4416 −−6V
PN4416A −2.5 −6V

 Y

 common-source

fs

transfer admittance

VDS = 15 V;
VGS = 0; f = 1 kHz

4.5 7.5 mS

handbook, halfpage

1

2

3

Fig.1 Simplified outline and symbol.

MAM042

g

d
s

December 1997 2

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V

V

I

G

P
T
T

DS

GSO

GDO

tot
stg
j

drain-source voltage

PN4416 − 30 V
PN4416A − 35 V

gate-source voltage

PN4416 −−30 V
PN4416A −−35 V

gate-drain voltage

PN4416 −−30 V

PN4416A −−35 V
DC forward gate current − 10 mA
total power dissipation up to T

= 25 °C (note 1) − 400 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-a

from junction to ambient (note 1) 350 K/W

Note

2

1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm

.

STATIC CHARACTERISTICS

= 25 °C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)GSS

gate-source breakdown voltage VDS = 0; IG = −1 µA

PN4416 −30 − V
PN4416A −35 − V

I

GSS

I

DSS

V

GSS

V

GS(off)

reverse gate leakage current VDS = 0; VGS = −15 V −−1nA
drain current VDS = 15 V; VGS = 0 5 15 mA
gate-source forward voltage VDS = 0; IG = 1 mA − 1V
gate-source cut-off voltage VDS = 15 V; ID = 1 nA

PN4416 −−6V
PN4416A −2.5 −6V

 common source transfer admittance VDS = 15 V; VGS = 0 4.5 7.5 mS

 Y

fs

 common source output admittance VDS = 15 V; VGS = 0

 Y

os

PN4416 − 50 µS
PN4416A − 50 µS

December 1997 3

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

DYNAMIC CHARACTERISTICS

T

= 25 °C; VDS = 15 V; VGS = 0.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

is

C

os

C

rs

g

is

g

fs

g

rs

goscommon source output conductance f = 100 MHz −−75 µS

V

n

input capacitance f = 1 MHz −−4pF
output capacitance f = 1 MHz −−2pF
feedback capacitance f = 1 MHz −−0.8 pF
common source input conductance f = 100 MHz −−100 µS

f = 400 MHz −−1mS

common source transfer conductance f = 100 MHz − 5.2 − mS

f = 400 MHz 4 5 − mS

common source feedback conductance f = 100 MHz −−8−µS

f = 400 MHz −−100 −µS

f = 400 MHz −−100 µS

equivalent input noise voltage f = 100 Hz − 5 − nV/√Hz

25

handbook, halfpage

I

DSS

(mA)

20

15

10

5

0

0246

VDS = 15 V; Tj = 25 °C.

Fig.2 Drain current as a function of

gate-source cut-off voltage; typical values.

–V

GS(off)

MRC168

(V)

GS(off)

MRC169

(V)

10

handbook, halfpage

Y

fs

(mS)

8

6

4

2

0

0246

VDS = 15 V; Tj = 25 °C.

–V

Fig.3 Common source transfer admittance as a

function of gate-source cut-off voltage;
typical values.

December 1997 4

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

–V

GS(off)

MRC167

(V)

80

handbook, halfpage

G

os

µ

( S)

60

40

20

0

0123456

VDS = 15 V; Tj = 25 °C.

Fig.4 Common source output conductance as a

function of gate-source cut-off voltage;
typical values.

12

handbook, halfpage

I

D

(mA)

8

4

0

0 4 8 12 16

Tj = 25 °C.

Fig.5 Typical output characteristics.

MRC163

VGS= 0 V

–0.5 V

–1V

VDS(V)

12

handbook, halfpage

I

D

(mA)

8

4

0

–5 –4 –3 –2 –1 0

VDS = 15 V; Tj = 25 °C.

Fig.6 Typical input characteristics.

MRC164

VGS(V)

handbook, halfpage

1

C

rs

(pF)

0.8

0.6

0.4

0.2

0

–10 –8 –6 –4 –2 0

VDS = 15 V; Tj = 25 °C.

Fig.7 Typical feedback capacitance.

MRC158

VGS(V)

December 1997 5

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

3.5

handbook, halfpage

C

is

(pF)

3

2.5

2

1.5

1

0.5

0

–10 –8 –6 –4 –2 0

VDS = 15 V; Tj = 25 °C.

Fig.8 Typical input capacitance.

MRC157

VGS(V)

4

10

handbook, halfpage

–I

G

(pA)

3

10

2

10

10

1

–1

10

–2

10

048121620

ID= 1 mA

MRC165

0.1 mA

I

GSS

VDG(V)

Fig.9 Gate current as a function of drain-gate

voltage, typical values.

500

handbook, halfpage

P

tot

(mW)

400

300

200

100

0

0 50 100 150

T

amb

Fig.10 Power derating curve.

MRC139

o

( C)

100

handbook, halfpage

g , b

isis

(mS)

10

1

0.1

0.01
10 100 1000

VDS = 15 V; VGS = 0; T

amb

b

g

= 25 °C.

MRC160

is

is

f (MHz)

Fig.11 Common source input conductance; typical

values.

December 1997 6

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

100

handbook, halfpage

g , –b

fsfs

(mS)

10

1

0.1
10 100 1000

VDS = 15 V; VGS = 0; T

amb

= 25 °C.

g

fs

–b

fs

f (MHz)

Fig.12 Common source transfer conductance;

typical values.

100

handbook, halfpage

g , b

osos

(mS)

10

b

os

1

0.1
g

os

0.01
10 100 1000

f (MHz)

MRC159

MRC161

100

handbook, halfpage

–g , –b

rs

rs

(mS)

10

–b

rs

1

0.1

0.01

0.001
10 100 1000

VDS = 15 V; VGS = 0; T

amb

= 25 °C.

–g

rs

f (MHz)

Fig.13 Common source feedback conductance;

typical values.

SPICE parameters for PN4416

September 1992; version 1.0.

1VTO =−3.553 V
2 BETA = 792.6 µA/V
3 LAMBDA = 18.46 m/V
4 RD = 7.671 Ω
5 RS = 7.671 Ω
6 IS = 333.4 aA
7 CGSO = 2.920 pF
8 CGDO = 2.261 pF
9 PB = 1.090 V
10 (note 1) FC = 500.0 m

Note

1. Parameter not extracted; default value.

MRC162

2

VDS = 15 V; VGS = 0; T

amb

= 25 °C.

Fig.14 Common source output conductance;

typical values.

December 1997 7

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

e

2.54

e

1.27

1

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

December 1997 8

Philips Semiconductors Product specification

N-channel field-effect transistor PN4416; PN4416A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

December 1997 9