Page 1
N-Channel JFET
High Frequency Amplifier
2N4416 / 2N4416A / PN4416
CORPORATION
FEATURES
Low Noise
••
Low Feedback Capacitance
••
Low Output Capacitance
••
High Trans cond uctanc e
••
High Powe r Gain
••
PIN CONFIGU R ATION
G
CJ1
C
D
S
TO-72
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise noted)
(T
A
Gate-Source or Gate-Dr ain Voltage
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperatur e Ra nge
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
Operating Temperatur e Ra nge
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
Lead Temperature (Soldering, 10se c). . . . . . . . . . . . . +300
TO-92
G
D
S
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N4416 Hermetic TO-72 -55
2N4416A Hermetic TO-72 -55
PN4416 Plastic TO- 92 -55
X2N4416 Sorted Chips in Carriers -55
o
C
o
C to +200oC
o
C +150oC
o
C to +200oC
o
C to +135oC
o
C to +135oC
o
C to +135oC
o
C to +135oC
o
C to +135oC
o
C
o
C
o
C
Page 2
2N4416 / 2N4416A / PN4416
CORPORATION
ELECTRICAL CHARACTERISTIC S (TA = 25oC unless otherwise sp ecif ied)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
I
GSS
Gate Reverse Current
-0.1 nA V
-0.1 µAT
BV
GSS
Gate-Source Breakdown Voltage
2N4416/PN4416 -30
2N4416A -35
V
GS(off)
Gate-Source Cutoff Voltage
2N4416/PN4416 -6
2N4416A -2.5 -6
V
I
g
g
C
C
C
GS(f)
DSS
fs
os
rss
iss
oss
Gate-Source Forward Voltage 1 V IG = 1mA, VDS = 0
Drain Current at Zero Gate Voltage 5 15 mA
Common-Source Forward Transconductance 4500 7500 µS
Common-Source Output Conductance 50 µs
Common-Source Reverse Transfer Capacitance (Note 1) 0.8 pF
Common-Source Input Capacitance (Note 1) 4
Common-Source Input Capacitance (Note 1) 2
ELECTRICAL CHARACTERISTIC S (Continued) (TA = 25oC unless otherwise specified)
SYMBOL PARAMETER
100MHz 400MHz
MIN MAX MIN MAX
UNITS TEST CONDITIONS
pF
= -20V, VDS = 0
GS
= 150oC
A
IG = -1µA, VDS = 0
V
V
= 15V, ID = 1nA
DS
f = 1kHz
V
= 15V,
DS
V
= 0
GS
f = 1MHz
g
iss
b
iss
g
oss
b
oss
g
fs
G
ps
Common-Source Input Conductance 100 1000
Common-Source Input Susceptance 2500 10,000
Common-Source Output
Conductance
75 100
Common-Source Output Susceptance 1000 4000
Common-Source Forward
Transconductance
4000
Common-Source Power Gain 18 10
µSV
dB
NF Noise Figure (Note 1) 2 4 V
NOTE 1: For design reference only, not 100% tested.
= 15V, VGS = 0 (Note 1)
DS
VDS = 15V, ID = 5mA (Note 1)
= 15V, ID = 5mA, RG = 1kΩ
DS
Loading...