Datasheet PMV31XN Datasheet (Philips)

1. Description

2. Features

PMV31XN

µTrenchMOS™ extremely low level FET

Rev. 01 — 26 February 2003 Product data

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.

Product availability:

PMV31XN in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Low threshold voltage

■ Surface mount package.

3. Applications

■ Battery powered motor control

■ High-speed switch in set top box power supplies.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

12

Top view

3

MSB003

SOT23

g

MBB076

d

s

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V
drain current (DC) Tsp=25°C; VGS= 4.5 V - 5.9 A
total power dissipation Tsp=25°C-2W
junction temperature - 150 °C
drain-source on-state resistance VGS= 4.5 V; ID= 1.5 A; Tj=25°C 3137mΩ

= 2.5 V; ID= 1 A; Tj=25°C 4453mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DSR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 20 V
drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -20V
gate-source voltage (DC) - ±12 V
drain current (DC) Tsp=25°C; VGS= 4.5 V; Figure 2 and 3 - 5.9 A

= 100 °C; VGS= 4.5 V; Figure 2 - 3.75 A

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 - 23.7 A
total power dissipation Tsp=25°C; Figure 1 -2W
storage temperature −55 +150 °C
junction temperature −55 +150 °C

source (diode forward) current (DC) Tsp=25°C - 1.7 A

9397 750 11066

Product data Rev. 01 — 26 February 2003 2 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

P

der

tot

----------------------

P

tot 25 C°()

100%×= I

03aa17

Tsp (°C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

2

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

------------------ -

I

D25C°()

100%×=

03aa25

Tsp (°C)

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03al69

I

D

(A)

10

1

10

10

-1

-2

-1

10

Limit R

DSon

= V

/ I

DS

D

DC

1 10 10

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

VDS (V)

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

2

9397 750 11066

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 26 February 2003 3 of 12

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistance from junction to solder point Figure 4 --60K/W

7.1 Transient thermal impedance

2

10

Z

th(j-sp)

(K/W)

= 0.5

δ

0.2

10

0.1

1

0.05

0.02

single pulse

-4

10

-3

10

-2

10

-1

10

1 10 10

P

t

p

T

tp (s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

03al68

δ =

t

p

T

t

2

9397 750 11066

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 26 February 2003 4 of 12

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

drain-source breakdown voltage ID= 250 µA; VGS=0V

=25°C 20--V

T

j

= −55 °C 18--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 0.5 - 1.5 V

T

j

= 150 °C 0.35 - - V

T

j

= −55 °C - - 1.8 V

T

j

drain-source leakage current VDS=20V; VGS=0V

=25°C --1µA

T

j

= 150 °C - - 100 µA

T

j

gate-source leakage current VGS= ±12 V; VDS= 0 V - 10 100 nA
drain-source on-state resistance VGS= 4.5 V; ID= 1.5 A; Figure 7 and 8 - 3137mΩ

= 2.5 V; ID=1A;Figure 7 and 8 - 4453mΩ

V

GS

total gate charge VDD=10V; VGS= 4.5 V; ID=6A;Figure 13 - 5.8 - nC
gate-source charge - 1.4 - nC
gate-drain (Miller) charge - 1.7 - nC
input capacitance VGS=0V; VDS= 20 V; f = 1 MHz; Figure 11 - 410 - pF
output capacitance - 115 - pF
reverse transfer capacitance - 80 - pF
turn-on delay time VDD=10V; RD=10Ω; VGS= 4.5 V; RG=6Ω -10-ns
rise time -15-ns
turn-off delay time - 25 - ns
fall time -12-ns

source-drain (diode forward) voltage IS= 1.5 A; VGS=0V;Figure 12 - 0.75 1.2 V

9397 750 11066

Product data Rev. 01 — 26 February 2003 5 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

20

I

D

(A)

15

10

5

0

0 0.2 0.4 0.6 0.8 1

4.5 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

R

DSon

(mΩ)

80

Tj = 25 °C

60

VGS = 2.5 V

03al70

3.1 V3.5 V

2.9 V

2.5 V

2.1 V

VGS = 1.7 V

V

DS

03al71

2.9 V

(V)

20

V

> ID x R

DS

I

D

(A)

15

10

5

0

01234

=25°C and 150 °C; VDS>IDxR

j

DSon

Tj = 150 °C

25 °C

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2

a

1.5

03al72

VGS (V)

DSon

03af18

3.1 V

40

20

0

0 5 10 15 20

3.5 V

4.5 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

1

0.5

0

-60 0 60 120 180

R

a

DSon

=

----------------------------

R

DSon 25 C°()

Tj (°C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 11066

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 26 February 2003 6 of 12

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

2

V

GS(th)

(V)

1.5

1

0.5

0

-60 0 60 120 180

ID= 1 mA; VDS=V

max

typ

min

GS

03al82

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

3

10

C

(pF)

V

03al83

GS

(V)

-3

10

I

D

(A)

-4

10

min maxtyp

-5

10

-6

10

0 0.5 1 1.5 2

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03al74

C

iss

C

10

10

2

-1

10

1 10 10

oss

C

rss

VDS (V)

2

VGS= 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 11066

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 26 February 2003 7 of 12

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

20

VGS = 0 V

I

S

(A)

15

10

5

150 °C

0

00.511.5

Tj = 25 °C

03al73

VSD (V)

5

ID = 6 A

V

GS

(V)

Tj = 25 °C

4

VDD = 10 V

3

2

1

0

02468

Tj=25°C and 150 °C; VGS=0V ID= 6 A; VDD=10V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

03al75

QG (nC)

9397 750 11066

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Product data Rev. 01 — 26 February 2003 8 of 12

Philips Semiconductors

PMV31XN

µTrenchMOS™ extremely low level FET

9. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

3.0

0.09

2.8

IEC JEDEC EIAJ

e

E

1.4

1.9

1.2

REFERENCES

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Fig 14. SOT23.

9397 750 11066

Product data Rev. 01 — 26 February 2003 9 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20030226 - Product data (9397 750 11066)

PMV31XN

µTrenchMOS™ extremely low level FET

9397 750 11066

Product data Rev. 01 — 26 February 2003 10 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

Philips Semiconductors

11. Data sheet status

PMV31XN

PMV31XN

µTrenchMOS™ extremely low level FET

µTrenchMOS™ extremely low level FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[2][3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date.Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

14. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics

N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 11066

9397 750 11066

Product data Rev. 01 — 26 February 2003 11 of 12

Product data Rev. 01 — 26 February 2003 11 of 12

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PMV31XN

µTrenchMOS™ extremely low level FET

© Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 26 February 2003 Document order number: 9397 750 11066