Datasheet PMLL4150, PMLL4151, PMLL4153 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

1/3 page (Datasheet)

M3D054

PMLL4150; PMLL4151;
PMLL4153

High-speed diodes

Product specification
Supersedes data of April 1996

1996 Sep 18

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

FEATURES

• Small hermetically sealed glass
SMD package

• High switching speed: max. 4 ns

• General application

• Continuous reverse voltage:

max. 50 V

• Repetitive peak reverse voltage:
max. 75 V

• Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.

APPLICATIONS

• High-speed switching

• The PMLL4150 is primarily

intended for general purpose use in
computer and industrial
applications.

• The PMLL4151 and PMLL4153 are
intended for military and industrial
applications.

DESCRIPTION

The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.

handbook, 4 columns

Cathode indicated by black band.

ka

MAM061

Fig.1 Simplified outline (SOD80C) and symbol.

1996 Sep 18 2

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V
I

F

I

FRM

I

FSM

P
T
T

RRM

R

tot
stg
j

repetitive peak reverse voltage

PMLL4151 − 75 V

PMLL4153 − 75 V
continuous reverse voltage − 50 V
continuous forward current see Fig.2; note 1

PMLL4150 − 300 mA

PMLL4151 − 200 mA

PMLL4153 − 200 mA
repetitive peak forward current

PMLL4150 − 600 mA

PMLL4151 − 450 mA

PMLL4153 − 450 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

total power dissipation T

=25°C; note 1 − 500 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 18 3

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

ELECTRICAL CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

I

R

C

d

forward voltage see Fig.3

PMLL4150 I

PMLL4151 I

PMLL4153 I

= 1 mA 540 620 mV

F

I

= 10 mA 660 740 mV

F

= 50 mA 760 860 mV

I

F

I

= 100 mA 820 920 mV

F

I

= 200 mA 870 1000 mV

F

=50mA − 1000 mV

F

= 0.1 mA 490 550 mV

F

I

= 0.25 mA 530 590 mV

F

= 1 mA 590 670 mV

I

F

I

= 2 mA 620 700 mV

F

I

= 10 mA 700 810 mV

F

I

= 50 mA 740 880 mV

F

reverse current VR= 50 V; see Fig.5

PMLL4150 − 0.1 µA

PMLL4151 − 0.05 µA

PMLL4153 − 0.05 µA
reverse current VR= 50 V; Tj= 150 °C; see Fig.5

PMLL4150 − 100 µA

PMLL4151 − 50 µA

PMLL4153 − 50 µA
diode capacitance f = 1 MHz; VR= 0; see Fig.6

PMLL4150 − 2.5 pF

PMLL4151 − 2pF

PMLL4153 2pF

1996 Sep 18 4

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

t

rr

t

rr

t

rr

t

fr

reverse recovery time when switched from IF= 10 mA to

PMLL4150 − 6ns

IR= 1 mA; RL= 100 Ω; measured at
IR= 0.1 mA; see Fig.7

when switched from I

= 10 mA to

F

− 4ns
200 mA to IR= 10 mA to 200 mA;
RL= 100 Ω; measured at IR= 0.1 × IF;
see Fig.7

when switched from I

= 200 mA to

F

− 6ns
400 mA to IR= 200 mA to 400 mA;
RL= 100 Ω; measured at IR= 0.1 × IF;
see Fig.7

reverse recovery time when switched from IF= 10 mA to

PMLL4151 − 4ns

IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7

when switched from I

= 10 mA to

F

− 2ns
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7

reverse recovery time when switched from IF= 10 mA to

PMLL4153 − 4ns

IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7

when switched from I

= 10 mA to

F

− 2ns
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7

forward recovery time when switched to IF= 200 mA; tr= 0.4 ns;

− 10 ns
measured at VF= 1 V; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 300 K/W
thermal resistance from junction to ambient note 1 350 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 18 5

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

GRAPHICAL DATA

amb

MBG456

(oC)

400

handbook, halfpage

I

F

(mA)

300

(1)

200

(2)

100

0

0 100 200

Device mounted on an FR4 printed-circuit board.
(1) PMLL4150.
(2) PMLL4151; PMLL4153.

T

Fig.0 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

012

(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (2) (3)

MBG464

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

10

2

10

3

10

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

tp (µs)

MBG704

4

10

1996 Sep 18 6

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

3

10

handbook, halfpage

I

R

(µA)

2

10

10

1

−1

10

−2

10

0 100

(1) VR= 75 V; maximum values.
(2) VR= 75 V; typical values.
(3) VR= 20 V; typical values.

(1) (2)

Tj (

MGD006

(3)

o

C)

Fig.5 Reverse current as a function of junction

temperature.

200

1.2

handbook, halfpage

C

d

(pF)

1.0

0.8

0.6

0.4
01020

f = 1 MHz; Tj=25°C.

MGD004

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1996 Sep 18 7

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

handbook, full pagewidth

D.U.T.

R = 50SΩ

V = V I x R

RF S

I

F

(1) The value of IR is dependent on product type.

Fig.7 Reverse recovery voltage test circuit and waveforms.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

input signal

t

p

t

I

F

t

rr

t

(1)

output signal

I

R = 50SΩ

Ω1 k Ω450

D.U.T.

OSCILLOSCOPE

R = 50iΩ

MBH181

I

10%

t

r

90%

t

p

input

signal

Input signal: forward pulse rise time tr= 0.4 ns; forward pulse duration tp= 100 ns; duty factor δ = 0.01.

Fig.8 Forward recovery time test circuit and waveforms.

1996 Sep 18 8

1.0

V

F

(V)

V

fr

t

t

fr

t

output

signal

Philips Semiconductors Product specification

High-speed diodes PMLL4150; PMLL4151; PMLL4153

PACKAGE OUTLINE

handbook, full pagewidth

1.60

O

1.45

0.3 0.3

3.7

3.3

MBA390 - 2

Dimensions in mm.

Fig.9 SOD80C.

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 18 9