Datasheet PMBFJ308, PMBFJ309, PMBFJ310 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

PMBFJ308; PMBFJ309;
PMBFJ310

N-channel silicon field-effect
transistors

Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07

1996 Sep 11

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

FEATURES

• Low noise

• Interchangeability of drain and source connections

• High gain.

APPLICATIONS

• AM input stage in car radios

• VHF amplifiers

• Oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.

CAUTION

The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

PMBFJ308; PMBFJ309;

PMBFJ310

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 s source
2 d drain
3 g gate

handbook, halfpage

Marking codes:

PMBFJ308: M08.
PMBFJ309: M09.
PMBFJ310: M10.

21

Top view

3

Fig.1 Simplified outline and symbol.

g

MAM036

d
s

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

DS
GSoff

drain-source voltage −±25 V
gate-source cut-off voltage VDS=10V; ID=1µA

PMBFJ308 −1 −6.5 V
PMBFJ309 −1 −4V
PMBFJ310 −2 −6.5 V

I

DSS

drain current VGS= 0; VDS=10V

PMBFJ308 12 60 mA
PMBFJ309 12 30 mA
PMBFJ310 24 60 mA

P

tot

 forward transfer admittance VDS=10V; ID=10mA 10 − mS

y

fs

total power dissipation up to T

=25°C − 250 mW

amb

1996 Sep 11 2

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GSO

V

GDO

I

G

P

tot

T

stg

T

j

400

handbook, halfpage

P

tot

(mW)

300

drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T

=25°C − 250 mW

amb

storage temperature −65 150 °C
operating junction temperature − 150 °C

MBB688

200

100

0

0 50 100 200

150

T

amb

Fig.2 Power derating curve.

(°C)

1996 Sep 11 3

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

Note

1. Device mounted on an FR4 printed-circuit board.

STATIC CHARACTERISTICS

=25°C; unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)GSS

V

GSoff

V

GSS

I

DSS

I

GSS

R

DSon

y

 forward transfer admittance ID= 10 mA; VDS=10V 10 −−mS

fs

 common source output

y

os

thermal resistance from junction to ambient; note 1 500 K/W

gate-source breakdown voltage IG= −1 µA; VDS=0 −25 −−V
gate-source cut-off voltage ID=1µA; VDS=10V V

PMBFJ308 −1 −−6.5 V
PMBFJ309 −1 −−4V

PMBFJ310 −2 −−6.5 V
gate-source forward voltage IG= 1 mA; VDS=0 −−1V
drain current VDS=10V; VGS=0

PMBFJ308 12 − 60 mA

PMBFJ309 12 − 30 mA

PMBFJ310 24 − 60 mA
gate leakage current VGS= −15 V; VDS=0 −−−1nA
drain-source on-state

VGS= 0; VDS= 100 mV − 50 −Ω

resistance

ID= 10 mA; VDS=10V −−250 µS

admittance

1996 Sep 11 4

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

DYNAMIC CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

is

C

rs

g

is

g

fs

g

rs

g

os

V

n

input capacitance VDS=10V; VGS= −10 V; f = 1 MHz 3 5 pF

=10V; VGS= 0; T

V

DS

=25°C6−pF

amb

reverse transfer capacitance VDS= 0; VGS= −10 V; f = 1 MHz 1.3 2.5 pF
common source input

conductance
common source transfer

conductance
common source reverse

conductance
common source output

conductance

VDS=10V; ID= 10 mA; f = 100 MHz 200 −µS

=10V; ID= 10 mA; f = 450 MHz 3 − mS

V

DS

VDS=10V; ID= 10 mA; f = 100 MHz 13 − mS

=10V; ID= 10 mA; f = 450 MHz 12 − mS

V

DS

VDS=10V; ID= 10 mA; f = 100 MHz −30 −µS

=10V; ID= 10 mA; f = 450 MHz −450 −µS

V

DS

VDS=10V; ID= 10 mA; f = 100 MHz 150 −µS

=10V; ID= 10 mA; f = 450 MHz 400 −µS

V

DS

equivalent input noise voltage VDS=10V; ID= 10 mA; f = 100 Hz 6 − nV/√Hz

50

handbook, halfpage

I

DSS

(mA)

40

30

20

10

0

0 −1 −2 −4

VDS= 10V; Tj=25°C.

MCD220

−3
V

(V)

GSoff

Fig.3 Drain current as a function of gate-source

cut-off voltage; typical values.

20

handbook, halfpage

y

fs

(mS)

16

12

8

4

0

0 −2 −4 −8

VDS= 10 V; ID= 10 mA; Tj=25°C.

MCD219

−6
V

(V)

GSoff

Fig.4 Forward transfer admittance as a function

of gate-source cut-off voltage; typical
values.

1996 Sep 11 5

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

150

handbook, halfpage

g

os

(µS)

100

50

0

0

VDS= 10 V; ID= 10 mA; Tj=25°C.

−1 −2 −4

MCD221

−3
V

(V)

GSoff

PMBFJ308; PMBFJ309;

80

handbook, halfpage

R

DSon

(Ω)

60

40

20

0

0 −1 −2 −4

VDS= 100 mV; VGS= 0; Tj=25°C.

PMBFJ310

MCD222

−3
V

(V)

GSoff

Fig.5 Common-source output conductance as a

function of gate-source cut-off voltage;
typical values.

16

handbook, halfpage

ID

(mA)

12

8

4

0

0 4 8 12 16

MCD216

VGS = 0 V

−0.25 V

−0.5 V

−0.75 V

−1 V

VDS (V)

Fig.6 Drain-source on-state resistance as a

function of gate-source cut-off voltage;
typical values.

16

handbook, halfpage

ID

(mA)

12

8

4

0

−2 −1.5 −1 −0.5 0
VGS (V)

MCD213

Tj=25°C.

Fig.7 Typical output characteristics; PMBFJ308.

1996 Sep 11 6

VDS= 10 V; Tj=25°C.

Fig.8 Typical transfer characteristics; PMBFJ308.

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

20

handbook, halfpage

ID

(mA)

16

12

8

4

0

0 4 8 12 16

MCD218

VGS = 0 V

−0.25 V

−0.5 V

−0.75 V

−1 V

VDS (V)

20

handbook, halfpage

ID

(mA)

16

12

8

4

0

−2 −1.5 −1 −0.5 0

PMBFJ308; PMBFJ309;

PMBFJ310

MCD215

VGS (V)

Tj=25°C.

Fig.9 Typical output characteristics; PMBFJ309.

40

handbook, halfpage

I

D

(mA)

30

20

10

0

048 16

MCD217

VGS = 0 V

−0.5 V

−1 V

−1.5 V

−2 V

−2.5 V

12

VDS (V)

VDS= 10 V; Tj=25°C.

Fig.10 Typical transfer characteristics; PMBFJ309.

40

handbook, halfpage

I

D

(mA)

30

20

10

0

−4 −3 −20

MCD214

−1
VGS (V)

Tj=25°C.

Fig.11 Typical output characteristics; PMBFJ310.

1996 Sep 11 7

VDS= 10 V; Tj=25°C.

Fig.12 Typical transfer characteristics; PMBFJ310.

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

handbook, halfpage

4

C

rs

(pF)

3

2

1

0

−10 −40

−8 −6 −2

MCD224

VGS (V)

10

handbook, halfpage

C

is

(pF)

8

6

4

2

0

−10 0

PMBFJ308; PMBFJ309;

PMBFJ310

MCD223

−8 −6 −4 −2
VGS (V)

VDS= 10 V; Tj=25°C.

Fig.13 Reverse transfer capacitance as a function

of gate-source voltage; typical values.

3

10

handbook, full pagewidth

I

D

(µA)

2

10

10

1

−1

10

−2

10

−3

10

−2.5 −2 −1.5 −1 −0.5 0

VDS= 10 V; Tj=25°C.

Fig.14 Input capacitance as a function of

gate-source voltage; typical values.

MCD229

VGS (V)

VDS= 10 V; Tj=25°C.

Fig.15 Drain current as a function of gate-source voltage; typical values.

1996 Sep 11 8

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

4

−10

handbook, full pagewidth

I

G

(pA)

3

−10

2

−10

−10

−1

−1

−10

02

4 6 8 10 12 14

PMBFJ308; PMBFJ309;

PMBFJ310

MCD230

ID = 10 mA

1 mA

100 µA

I

GSS

VDG (V)

16

Tj=25°C.

4

10

handbook, full pagewidth

I

GSS
(pA)

3

10

2

10

10

1

−1

10

−25 0

Fig.16 Gate current as a function of drain-gate voltage; typical values.

25 50 75 100 125 150

Tj (

MCD231

o

C)

175

Fig.17 Gate current as a function of junction temperature; typical values.

1996 Sep 11 9

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

100

handbook, halfpage

gis, b

is

(mS)

10

1

0.1
10

b

is

g

is

100 1000

MCD228

f (MHz)

100

handbook, halfpage

gfs, −b

fs

(mS)

10

1

PMBFJ308; PMBFJ309;

PMBFJ310

MCD227

g

fs

−b

fs

10010

f (MHz)

1000

VDS= 10 V; ID= 10 mA; T

amb

=25°C.

Fig.18 Input admittance; typical values.

2

10

handbook, halfpage

−brs, −g

rs

(mS)

10

− b

rs

1

− g

−1

10

−2

10

rs

10010

f (MHz)

MCD226

1000

VDS= 10 V; ID= 10 mA; T

amb

=25°C.

Fig.19 Forward transfer admittance; typical values.

100

handbook, halfpage

bos, g

os

(mS)

10

1

0.1
10

b

os

g

os

100 1000

MCD225

f (MHz)

VDS= 10 V; ID= 10 mA; T

amb

=25°C.

Fig.20 Reverse transfer admittance; typical values.

1996 Sep 11 10

VDS= 10 V; ID= 10 mA; T

amb

=25°C.

Fig.21 Output admittance; typical values.

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

PACKAGE OUTLINE

handbook, full pagewidth

0.150

30

max

0.090

0.1

max

max

o

o

10

0.48

0.38

10

max

0.55

0.45

o

1.1

max

3.0

2.8

1.9

0.95

21

3

TOP VIEW

A

M0.1 AB

PMBFJ308; PMBFJ309;

PMBFJ310

B

A

M

0.2

2.5

1.4
max

1.2

MBC846

Dimensions in mm.

Fig.22 SOT 23.

1996 Sep 11 11

Philips Semiconductors Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Sep 11 12