Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
April 1995
Page 2
Philips Semiconductors Product specification
N-channel junction FETs
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low R
( < 30 Ω for PMBFJ111).
DESCRIPTION
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
PINNING - SOT23
PIN DESCRIPTION
1 drain
2 source
3 gate
Note
1. Drain and source are
interchangeable.
at zero gate voltage
DSon
PMBFJ111;
PMBFJ112; PMBFJ113
handbook, halfpage
12
Top view
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
DS
GSO
GDO
G
drain-source voltage −±40 V
gate-source voltage −−40 V
drain-drain voltage −−40 V
forward gate current
(DC)
P
tot
T
stg
T
j
total power dissipation T
storage temperature −65 150 °C
operating junction
temperature
3
=25°C;
amb
note 1
g
MAM385
d
s
− 50 mA
− 300 mW
− 150 °C
April 1995 2
Page 3
Philips Semiconductors Product specification
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
THERMAL CHARACTERISTICS
T
=P(R
j
R
th j-a
R
th j-a
Notes
1. Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
2. Mounted on printed circuit board.
STATIC CHARACTERISTICS
=25°C.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
−I
GSS
I
DSS
−V
(BR)GSS
−V
GS(off)
R
DS(on)
th j-t
+ R
th t−s
+ R
th s-a
) + T
amb
SYMBOL PARAMETER MAX. UNIT
from junction to ambient (note 1) 430 K/W
from junction to ambient (note 2) 500 K/W
reverse gate current −VGS= 15 V; VDS=0 − 1nA
drain current VGS= 0; VDS= 15 V
PMBFJ111 20 − mA
PMBFJ112 5 −
PMBFJ113 2 −
gate-source breakdown voltage −IG=1µA; VDS=0 40 − V
gate-source cut-off voltage ID=1µA; VDS=5 V
PMBFJ111 3 10 V
PMBFJ112 1 5
PMBFJ113 0.5 3
drain-source on-resistance VGS= 0 V; VDS= 0.1 V
PMBFJ111 − 30 Ω
PMBFJ112 − 50
PMBFJ113 − 100
April 1995 3
Page 4
Philips Semiconductors Product specification
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
DYNAMIC CHARACTERISTICS
T
=25°C.
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
iss
C
rss
input capacitance VDS= 0
feedback capacitance VDS= 0
Switching times (see Fig.2)
t
r
t
on
t
f
t
off
rise time note 1 6 − ns
turn-on time note 1 13 − ns
fall time note 1 15 − ns
turn-off time note 1 35 − ns
−VGS= 10 V
f = 1 MHz
= 0
V
DS
−VGS=0
f = 1 MHz
T
=25°C
amb
−VGS= 10 V
f = 1 MHz
6 − pF
22 28 pF
3 − pF
Notes
1. Test conditions for switching times are as follows:
V
−V
−V
−V
k, halfpage
V
DD
= 10 V, VGS= 0 to −V
DD
= 12 V, RL= 750 Ω (PMBFJ111);
GS(off)
= 7 V, RL= 1550 Ω (PMBFJ112);
GS(off)
= 5 V, RL= 3150 Ω (PMBFJ113).
GS(off)
50 Ω
10 nF
10 µF
50 Ω
R
DUT
GS(off)
1 µF
L
(all types);
VGS = 0 V
V
SAMPLING
SCOPE
50 Ω
V
MBK289
i
−V
o
GS off
10%
90%
90%
10%
t
off
t
t
f
s
t
on
t
t
d
r
MBK294
Fig.2 Switching circuit.
April 1995 4
Fig.3 Input and output waveforms.
Page 5
Philips Semiconductors Product specification
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
max.
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
April 1995 5
Page 6
Philips Semiconductors Product specification
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995 6
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