Datasheet PM800HSA060 Datasheet (Mitsubishi)

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

A

JK

L

M

LABEL

5 FO
4 VC
3 CI
2 SR
1 V1

VI

FO
SR
CI
VC

V (2 REQD)

U φ (4 HOLES)

G

N

FO
SR
IN

CE

VCC

TEMP
OUT1
OUT2
SENS
SINK

GND

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.46 88.0
B 3.85 98.0
C 1.16 29.5
D 2.76 70.0
E 3.15±0.01 80.0±0.25
F 2.56 65.0
G 1.34+0.04/-0.02 34.0+1/-0.5
H 0.63 16.0

J 0.63 16.1
K 1.00 25.4
L 0.20 5.1

S φ

(2 PLS)

B

E

R

W

12 34 5

TYP

Q

T SQ PIN
(5 PLS)

F
D

H

P

C

C

E

Dimensions Inches Millimeters

M 1.83 46.6
N 0.28 7.0

P 0.59 15.0
Q 0.10 2.54
R 0.71 18.0

S 0.08 2.0

T 0.02 SQ 0.64 SQ
U 0.26 6.5

VM8M8
W 0.79 20.0

Description:

Mitsubishi Intelligent Power Mod­ules are isolated base modules de­signed for power switching applica­tions operating at frequencies to
20kHz. Built-in control circuits pro­vide optimum gate drive and pro­tection for the IGBT and free-wheel
diode power devices.

Features:

u Complete Output Power

Circuit

u Gate Drive Circuit
u Protection Logic

– Short Circuit
– Over Current
– Over Temperature
– Under Voltage

Applications:

u Inverters
u UPS
u Motion/Servo Control
u Power Supplies

Ordering Information:

Example: Select the complete
part number from the table below

-i.e. PM800HSA060 is a 600V,
800 Ampere Intelligent Power Mod­ule.

Type Current Rating V

Amperes Volts (x 10)

PM 800 60

CES

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM800HSA060 Units
Power Device Junction Temperature T
Storage T emperature T
Case Operating Temperature T
Mounting Torque, M6 Mounting Screws — 3.92 ~ 5.88 N · m
Mounting Torque, M8 Main Terminal Screws — 8.83 ~ 10.8 N · m
Module Weight (Typical) — 630 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 ~16.5V, Inverter Part) V
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

j

stg

C

CC(prot.)

iso

Control Sector, Tj = 25°C unless otherwise specified

Supply Voltage (Applied between V1-VC)V
Input Voltage (Applied between C1-VC)V
Fault Output Supply Voltage (Applied between FO and VNC)V
Fault Output Current (Sink Current of FO Terminal) I

D

CIN

FO

FO

-20 to 150 °C

-40 to 125 °C

-20 to 100 °C

400 Volts

2500 Vrms

20 Volts
10 Volts
20 Volts
20 mA

IGBT Inverter Sector, Tj = 25°C unless otherwise specified

Collector-Emitter Voltage (VD = 15V, V
Collector Current, (TC = 25°C) I
Peak Collector Current, (TC = 25°C) I
Collector Dissipation P

= 5V) V

CIN

CES

C

CP

C

600 Volts

800 Amperes
1600 Amperes
2100 Watts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector

Over Current Trip Level Inverter Part OC -20°C ≤ Tj ≤ 125°C, VD = 15V 1000 1350 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ Tj ≤ 125°C, VD = 15V 1350 1870 — Amperes
Over Current Delay Time t
Over T emperature Protection OT Trip Level 100 110 120 °C

Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts

Supply Voltage V
Circuit Current I
Input ON Threshold Voltage V
Input OFF Threshold Voltage V
PWM Input Frequency f
Arm Shoot-through Blocking Time t
Fault Output Current I

Minimum Fault Output Pulse Width t
SR Terminal Output Voltage V

off(OC)

OT

r

UV

r

D

D
th(on)
th(off)

PWM

dead

FO(H)

I

FO(L)

FO

SR

-20°C ≤ Tj ≤ 125°C, Rin = 6.8kΩ 4.5 5.1 5.6 Volts

VD = 15V — 5 — µs

Reset Level 85 95 105 °C

Reset Level — 12.5 — V olts

Applied between V1-V

VD = 15V, V
Applied between C1-V
Applied between C1-V

3-φ Sinusoidal — 15 20 kHz

At IPM's Input Terminals 3.5 — — µs

VD = 15V , VFO = 15V — — 0.01 mA
VD = 15V , VFO = 15V — 10 15 mA

CIN

VD = 15V 1.0 1.8 — ms

C

= 5V — 23 30 mA

C
C

13.5 15 16.5 Volts

1.2 1.5 1.8 Volts

1.7 2.0 2.3 Volts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector Cutoff Current I

Emitter-Collector Voltage V
Collector-Emitter Saturation Voltage V

Inductive Load Switching Times t

t

t

CES

EC

CE(sat)

on

t

rr

C(on)

t

off

C(off)

VCE = V

VCE = V

-IC = 800A, VD = 15V , V
VD = 15V , V

Tj = 25°C, Pulsed

VD = 15V , V

Tj = 125°C, Pulsed

VD = 15V , V

VCC = 300V, IC = 800A — 0.4 1.0 µs

, Tj = 25°C — — 1.0 mA

CES

, Tj = 125°C — — 10.0 mA

CES

= 5V — 1.9 2.8 Volts

CIN

= 0V, IC = 800A, — 2.0 2.7 Volts

CIN

= 0V, IC = 800A, — 2.1 2.8 Volts

CIN

0.5 1.4 2.5 µs

= 0 ↔ 5V — 0.15 0.3 µs

CIN

Tj = 125°C — 2.5 3.5 µs

— 0.5 1.0 µs

Thermal Characteristics

Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R

Contact Thermal Resistance R

th(j-c)Q

R

th(j-c)F

th(c-f)

Each IGBT — — 0.06 °C/Watt

Each FWDi — — 0.09 °C/Watt
Case to Fin Per Module, — — 0.038 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage V

Input ON Voltage V
Input OFF Voltage V
PWM Input Frequency f
Minimum Dead Time t

CC

V

D
CIN(on)
CIN(off)

PWM

dead

Applied across C-E Terminals 0 ~ 400 Volts

Applied between V1-V
Applied between C1-V
Applied between C1-V

Using Application Circuit 5 ~ 20 kHz

Input Signal ≥ 3.5 µs

C
C
C

15 ± 1.5 Vol

0 ~ 0.8 Volts

4.0 ~ VSRVolts

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED P ACKAGE

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

3

VD = 15V

Tj = 25oC

= 125oC

T

, (VOLTS)

2

CE(sat)

j

1

SATURATION VOLTAGE V

0

200 400 600 800 10000

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

, (µs)

off

, t

on

0

10

SWITCHING TIMES, t

-1

10

2

10

COLLECTOR CURRENT, IC, (AMPERES)

DIODE FORWARD CHARACTERISTICS

3

10

= 15V

V

D

Tj = 25oC

o

= 125

C

T

, (AMPERES)

C

j

t

off

t

on

10

VCC = 300V
V

Inductive Load

3

= 15V

D

Tj = 25oC

= 125oC

T

j

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS (TYPICAL)

3

800

600

2

, (VOLTS)

CE(sat)

V

1

IC = 800A

COLLECTOR-EMITTER SATURATION VOLTAGE

0

= 25oC

T

j

= 125

T

j

o

C

, (AMPERES)

C

400

200

COLLECTOR CURRENT, I

013 1714 15 16

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME VS.

COLLECTOR CURRENT (TYPICAL)

1

10

VCC = 300V

= 15V

V

D

Inductive Load

, (µs)

c(off)

, t

c(on)

0

10

SWITCHING TIMES, t

-1

10

4

10

2

10

1.2

o

= 25

T

C

j

o

= 125

C

T

j

t

c(off)

t

c(on)

3

COLLECTOR CURRENT, IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS.

SUPPLY VOLTAGE (TYPICAL)

= 25

T

j

10

o

C

4

10

1.1

1.0

10

, (µs)

rr

10

REVERSE RECOVERY TIME, t

-1

10

1.2

1.1

1.0

OUTPUT CHARACTERISTICS

(TYPICAL)

Tj = 25oC

VD = 17V

15

0

012

COLLECTOR-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT VS.

COLLECTOR CURRENT (TYPICAL)

1

VCC = 300V

= 15V

V

D

Inductive Load

T

= 25

j

= 125oC

T

j

o

C

0

2

10

COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS.

TEMPERATURE (TYPICAL)

CE(sat)

I

rr

t

rr

3

10

13

, (VOLTS)

3

3

10

, (AMPERES)

rr

2

10

REVERSE RECOVERY CURRENT, I

1

10

4

10

2

10

COLLECTOR REVERSE CURRENT, -I

1

10

01 3

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

2

0.9

0.8

0.7

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

130151719

SUPPLY VOLTAGE, VD, (VOLTS)

0.9

0.8

0.7

OVER CURRENT TRIP LEVEL % (NORMALIZED)

0

-20 20 60 100 140

JUNCTION TEMPERATURE, Tj, (oC)

V

D

= 15V

Sep.1998

MITSUBISHI INTELLIGENT POWER MODULES

PM800HSA060

FLA T-BASE TYPE

INSULA TED PACKAGE

FAULT OUTPUT PULSE WIDTH VS.

TEMPERATURE (TYPICAL)

1.2

1.1

1.0

0.9

0.8

0.7

FAULT OUTPUT PULSE WIDTH % (NORMALIZED)

0

-20 20 60 100 140

JUNCTION TEMPERATURE, Tj, (oC)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10

(Each FWDi)

-2

-1

10

TIME, (s)

th(j-c)F

1

10

0

10

, (NORMALIZED VALUE)

-1

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

-3

10

= 15V

V

D

= 0.09oC/W

0

10

CONTROL SUPPLY VOLTAGE TRIP-RESET

LEVEL TEMPERATURE DEPENDANCY

(TYPICAL)

15

UV

t

UV

14

r

1

10

0

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(Each IGBT)

13

, (NORMALIZED VALUE)

-1

12

, (VOLTS)

r

UV, UV

11

UV TRIP-RESET LEVEL,

10

0

JUNCTION TEMPERATURE, Tj, (oC)

1

10

100-20 20 60

140

th(j-c)

10

-2

10

SINGLE PULSE
STANDARD VALUE = R

-3

10

TRANSIENT IMPEDANCE, Z

10

-2

-3

10

-1

10

TIME, (s)

th(j-c)Q

= 0.06oC/W

0

10

1

10

Sep.1998