Datasheet PLVA650A, PLVA656A, PLVA659A, PLVA662A, PLVA665A Datasheet (Philips)

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Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PLVA600A series
Low-voltage avalanche regulator diodes
Product specification Supersedes data of 1996 Apr 26
1999 May 25
Page 2
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
FEATURES
Very low dynamic impedance at low currents: approximately1⁄20 of conventional series
Hard breakdown knee
Low noise: approximately1⁄10 of
conventional series
Total power dissipation: max. 250 mW
Small tolerances of V
Z
Working voltage range: nom. 5.0 to 6.8 V
Non-repetitive peak reverse power dissipation: max. 30 W.
APPLICATIONS
Low current, low power, low noise applications
CMOS RAM back-up circuits
Voltage stabilizers
Voltage limiters
Smoke detector relays.
DESCRIPTION
High performance voltage regulator diodes in small SOT23 plastic SMD packages.
The series consists of PLVA650A to PLVA668A.
PINNING
PIN DESCRIPTION
1 anode 2 not connected 3 cathode
handbook, halfpage
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER MARKING CODE
PLVA650A 9A PLVA653A 9B PLVA656A 9C PLVA659A 9D PLVA662A 9E PLVA665A 9F PLVA668A 9G
Note
1. = p: Made in Hong Kong.= t: Made in Malaysia.
2
n.c.
1
3
MAM243
(1)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
continuous forward current 250 mA repetitive peak working current tp= 100 µs; δ = 10% 250 mA non-repetitive peak reverse power dissipation tp= 100 µs; Tj= 150 °C30W total power dissipation T
=25°C; note 1 250 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
1999 May 25 2
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Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
Z
V
Z
R
Z
S
Z
I
R
forward voltage IF=10mA −−0.9 V working voltage IZ= 250 µA
PLVA650A 4.80 5.00 5.20 V PLVA653A 5.10 5.30 5.50 V PLVA656A 5.40 5.60 5.80 V PLVA659A 5.70 5.90 6.10 V PLVA662A 6.00 6.20 6.40 V PLVA665A 6.30 6.50 6.70 V PLVA668A 6.60 6.80 7.00 V
working voltage IZ=10µA
PLVA650A 4.30 V PLVA653A 5.20 V PLVA656A 5.51 V PLVA659A 5.85 V PLVA662A 6.19 V PLVA665A 6.49 V PLVA668A 6.80 V
dynamic resistance 1 kHz superimposed;
I
is 10% of I
PLVA650A −−700
ZAC
; IZ= 250 µA
ZDC
PLVA653A −−250 PLVA656A to PLVA668A −−100
temperature coefficient IZ= 250 µA
PLVA650A 0.20 mV/K PLVA653A 1.60 mV/K PLVA656A 1.90 mV/K PLVA659A 2.40 mV/K PLVA662A 2.65 mV/K PLVA665A 2.90 mV/K PLVA668A 3.40 mV/K
reverse current VR= 80% VZnominal
PLVA650A −−20000 nA PLVA653A −−5000 nA PLVA656A −−1000 nA PLVA659A −−500 nA PLVA662A −−100 nA PLVA665A −−50 nA PLVA668A −−10 nA
1999 May 25 3
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Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
I
R
V
Z
V
n
reverse current VR= 50% VZnominal
PLVA650A 34 nA PLVA653A 22 nA PLVA656A 1.1 nA PLVA659A 0.9 nA PLVA662A 0.9 nA PLVA665A 0.9 nA PLVA668A 0.8 nA
reverse current VR= 90% VZnominal
PLVA650A 21 −µA PLVA653A 3.5 −µA PLVA656A 1.3 −µA PLVA659A 1.0 −µA PLVA662A 0.05 −µA PLVA665A 0.04 −µA PLVA668A 0.006 −µA
line regulation
PLVA659A to PLVA668A I PLVA656A I PLVA650A I PLVA653A I
noise voltage density f = 1 kHz; B = 1 kHz; IZ= 250 µA
=10µA; IHi=1mA −−0.1 V
LO
=50µA; IHi=1mA −−0.1 V
LO
= 100 µA; IHi=1mA −−0.4 V
LO
= 100 µA; IHi=1mA −−0.2 V
LO
−−1.0
µV
----------- ­Hz
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 330 K/W thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed circuit-board.
1999 May 25 4
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Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
3.0
0.38
0.09
IEC JEDEC EIAJ
2.8
1.4
1.2
e
E
1.9
REFERENCES
0.95
e
1
UNIT
mm
A
1.1
0.9
OUTLINE VERSION
SOT23
max.
1999 May 25 5
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 6
Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 25 6
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Philips Semiconductors Product specification
Low-voltage avalanche regulator diodes PLVA600A series
NOTES
1999 May 25 7
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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 25 Document order number: 9397 750 05918
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