Datasheet PIP 3221 DC Datasheet (Philips)

www.DataSheet4U.com

1. Product profile

1.1 Description

1.2 Features

PIP3221-DC

Dual channel high-side TOPFET™

Rev. 01 — 20 February 2004 Product data

Monolithic temperature and overload protected dual high-side powerswitch based on
TOPFET™ Trench technology in a 7-pin surface mount plastic package.

■ Very low quiescent current ■ CMOS logic compatibility

■ Power TrenchMOS™ ■ Current limitation

■ Overtemperature protection ■ Soft latched overload protection

■ Over and undervoltage protection ■ ESD protection for all pins

■ Reverse battery protection ■ Diagnostic status indication

■ Low charge pump noise ■ Off-state open load detection

■ Loss of ground protection ■ Load dump protection

■ Negative load clamping ■ Internal ground resistor.

1.3 Applications

■ 12 and 24 V grounded loads ■ High inrush current loads

■ Inductive loads ■ Replacement for relays and fuses.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Min Max Units

R

BLon

I

L

I

L(nom)

I

L(lim)

V

BG(oper)

battery-load on-state resistance - 90 mΩ
load current - 4 A
nominal load current (ISO) 3.6 - A
self-limiting load current 8 16 A
battery-ground operating voltage 5.5 35 V

Philips Semiconductors

2. Pinning information

PIP3221-DC

Dual channel high-side TOPFET™

B

S

mb

1234567

Front view

No connection can be made to pin 4 (cropped). P represents protection circuitry.

MBK128

I1
I2

P

G

L1

L2

03pa68

Fig 1. Pinning; SOT427 (D2-PAK). Fig 2. Symbol; (Dual High-Side Switch) TOPFETTM.

2.1 Pin description

Table 2: Pin description

Symbol Pin I/O Description

L1 1 O load 1
G 2 - circuit common ground
I1 3 I input 1
B4-

[1] [2]

S 5 O status
I2 6 I input 2
L2 7 O load 2

-mb-

[2]

battery

mounting base

[1] Pin 4 is cropped and cannot be connected to the PCB by surface mounting.
[2] The battery is connected to the mounting base.

3. Ordering information

Table 3: Ordering information

Type number Package

Name Description Version

2

PIP3221-DC D

-PAK Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)

9397 750 12361

Product data Rev. 01 — 20 February 2004 2 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

SOT427

Philips Semiconductors

4. Block diagram

CHANNEL1

REGULATOR

CHARGE PUMP

CURRENT LIMIT

VOLTAGE

PIP3221-DC

Dual channel high-side TOPFET™

4/mb

B

POWER
MOSFET1

3

I1

6

I2

CONTROL

LOGIC1

STATUS DIAGNOSIS

CONTROL

LOGIC2

OPEN CIRCUIT

OVERVOLTAGE

PROTECTION

UNDERVOLTAGE

PROTECTION

SHORT CIRCUIT

PROTECTION

TEMPERATURE

CHANNEL2

REGULATOR

CHARGE PUMP

CURRENT LIMIT

OPEN CIRCUIT

OVERVOLTAGE

PROTECTION

UNDERVOLTAGE

PROTECTION

SHORT CIRCUIT

PROTECTION

TEMPERATURE

SENSOR

SENSOR

VOLTAGE

SENSOR

SENSOR

POWER
MOSFET2

R

LG1

R

LG2

1

L1

5

S

7

L2

R

2

G

G

03ap07

Fig 3. Elements of the dual high-side TOPFET switch.

9397 750 12361

Product data Rev. 01 — 20 February 2004 3 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

5. Functional description

A diagnostic status ensures faster fault detection.
Active current limit is combined with a soft latched short circuit protection feature in

order to protect the device in the event of a short circuit.
Thermal shutdown for high temperature conditions has an automatic restart at a

lower temperature so providing protection against excessive power dissipation.
Active clamping protects the device against low energy spikes.
Undervoltage lockout means the device shuts down for low battery voltages, thus

avoiding faulty operation.
Overvoltage shutdown in the on-state protects a load such as a lamp filament from

potentially destructive voltage spikes.

Table 4: Truth table

Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature

Input Supply Load 1 Load 2 Load output Status Operating mode

1 2 UV OV OC SC OT OC SC OT 1 2

L L 0 X 0 X X 0 X X OFF OFF H both off & normal
LL0X1XXXXXOFFOFF Lboth off, one/both OC or

shorted to V

Figure 10

L H 0 X 1 X X 0 0 0 OFF ON L one off & OC, with other on

& normal

HL00000000ONOFFHone on & normal, with other

off & normal
HH00000000ONON Hboth on & normal
H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout
H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage

shutdown
HX0001XXXXOFFX Lone SC shutdown
HL0001X00XOFFOFFLoneSCshutdown,with other

off & normal
HH0001X000OFFON LoneSCshutdown,with other

on & normal
HX00001XXXOFFX Lone OT shutdown
HL0000100XOFFOFFLoneOTshutdown, withother

off & normal
HH00001000OFFON LoneOTshutdown, withother

on & normal

[1]

.

or battery;

S

[1] The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature.

See “Overtemperature protection” characteristics in Table 7 “Static characteristics”.

9397 750 12361

Product data Rev. 01 — 20 February 2004 4 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

6. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

BG

I

L

P

tot

T

stg

T

j

T

mb

battery-ground supply voltage
load current Tmb≤ 130 °C-4A
total power dissipation Tmb≤ 25 °C - 44.6 W
storage temperature −55 +175 °C
junction temperature −40 +150 °C
mounting base temperature during soldering (≤ 10 s) - 260 °C

Reverse battery voltage

V
V

BGR
BGRR

reverse battery-ground supply voltage RI≥ 3.3 kΩ; RSS≥ 3.3 kΩ; Figure 10
repetitive reverse battery-ground

supply voltage

Input current

I
I

I
IRM

input current −5+5mA
repetitive peak input current δ≤0.1; tp= 300 µs −50 +50 mA

Status current

I

S

I

SRM

status current −5+5mA
repetitive peak status current δ≤0.1; tp= 300 µs −50 +50 mA

Inductive load clamping

E

BL(CL)S

non-repetitive battery-load clamping
energy

Electrostatic discharge voltage

V

esd

electrostatic discharge voltage Human Body Model 1; C = 100 pF;

Tj= 150 °C prior to turn-off; VBG=13V;

= 5 A; (one channel) Figure 13

I

L

R = 1.5 kΩ

[1]

-45V

[2]

-16V

-32V

-60mJ

-2kV

[1] The device will not be harmed by exposure to the maximum supply voltage, but normal operation isnot possiblebecause of overvoltage

shutdown - see Table 7 “Static characteristics” for the operating range.

[2] Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load

must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical

dynamic response circuit diagram including reverse supply protection and open load detection.”

7. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to
mounting base

R

th(j-a)

thermal resistance from junction to
ambient

9397 750 12361

Product data Rev. 01 — 20 February 2004 5 of 16

per channel - 4 5.6 K/W
both channels - 2 2.8 K/W
mounted on printed circuit board;

- 50 - K/W

minimum footprint

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

8. Static characteristics

Table 7: Static characteristics

Limits are valid for−40°C≤T

Symbol Parameter Conditions Min Typ Max Unit

Clamping voltage

V

BG(CL)

V

BL(CL)

V

LG(CL)

battery-ground clamping voltage IG=1mA 455565V
battery-load clamping voltage IL=IG= 1 mA 50 55 65 V
load-ground clamping voltage IL=10mA;Figure 13

Supply voltage

V

BG(oper)

Current

I

B

I

L(off)

I

G(on)

I

L(nom)

battery-ground operating voltage 5.5 - 35 V

[2]

battery quiescent current VLG=VIG=0V;Figure 9

off-state load current VBL=VBG; per channel

operating current one channel on; Figure 5 - 23mA

nominal load current (ISO) VBL= 0.5 V; Tmb=85°C

Resistance

R

BLon

R

G

Input

I

I

V

IG(CL)

V

IG(on)

V

IG(off)

V

IG(on)(hys)

I

I(on)

I

I(off)

battery-load on-state resistance 9 ≤ VBG≤ 35 V; IL=4A;Figure 4

ground resistor IG= −200 mA; tp= 300 µs

[7]

input current VIG= 5 V 20 60 160 µA
input-ground clamping voltage II= 200 µA 5.5 7 8.5 V
input-ground turn-on voltage Figure 8 - 2.1 3 V
input-ground turn-off voltage 1.2 1.8 - V
input-ground turn-on hysteresis 0.15 0.3 0.5 V
input turn-on current VIG=3V - - 100 µA
input turn-off current VIG= 1.2 V 12 - - µA

Open current detection

V

LG(oc)

I

G(oc)

load-ground open circuit voltage VBG≥ 9 V 1.5 2.5 3.5 V
open-circuit operating current VBG=VLG=16V

[8][9]

≤

+150°C and typical values for Tmb=25°C unless otherwise specified.

mb

[1]

= 4 A; tp= 300 µs −20 −25 −30 V

I

L

[3]

Tmb= 150 °C --20µA

=25°C - 0.1 1 µA

T

mb

= 150 °C --10µA

T

mb

=25°C - 0.1 1 µA

T

mb

both channels on - 4 6 mA

[4]

[5]

Tmb=25°C - 73 90 mΩ

= 150 °C - 146 180 mΩ

T

mb

= 5.5 V; IL=4A

V

BG

=25°C - 76 120 mΩ

T

mb

= 150 °C - 150 240 mΩ

T

mb

[6]

open load detected; other
channel is off

−18 −23 −28 V

3.6 - - A

40 75 100 Ω

- 0.8 1.5 mA

9397 750 12361

Product data Rev. 01 — 20 February 2004 6 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

Table 7: Static characteristics

Limits are valid for−40°C≤T

…continued

≤

+150°C and typical values for Tmb=25°C unless otherwise specified.

mb

Symbol Parameter Conditions Min Typ Max Unit

I

L(oc)

R

L(oc)

load open circuit current VLG= 3.5 V; per channel - −22 −40 µA

= 16 V; per channel - −200 −300 µA

V

LG

open circuit load resistor VS= 5 V; connected externally;

-10-kΩ

per channel; Figure 10

Undervoltage

V

BG(uv)

V

BG(uv)(hys)

[9]

battery-ground undervoltage
battery-ground undervoltage

[11]

2 4.2 5.3 V

- 0.5 1.5 V

hysteresis

Overvoltage

V

BG(ov)

V

BG(ov)(hys)

I

G(ov)

[9]

battery-ground overvoltage

[12]

35 40 45 V

battery-ground overvoltage hysteresis 0.2 1 2 V
overvoltage operating current VBG= 45 V; per channel - 1 2.5 mA

Overload protection

I

L(lim)

self-limiting load current VBG≥ 8 V; VBL=V

Overtemperature protection

T

j(th)

T

j(th)(hys)

threshold junction temperature
threshold junction temperature

[9][10]

Figure 7 8 1216A

BG;

[13]

150 170 190 °C

31020°C

hysteresis

[9]

Status

V

SG(CL)

V

SG(L)

I

S(off)

R

S

status-ground clamping voltage IS= 100 µA 5.5 7 8.5 V
status-ground low voltage IS= 100 µA; Figure 6 - 0.7 0.9 V

= 250 µA - - 1.1 V

I

S

status leakage current VSG=5V

= 150 °C --10µA

T

mb

=25°C - 0.1 1 µA

T

mb

status resistor VSG= 5 V; connected externally;

[14]

-47-kΩ

Figure 10

[1] For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This

negative voltage is clamped by the device.
[2] 9 V ≤ VBG≤ 35 V
[3] This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
[4] Defined as in ISO10483-1. For comparison purposes only.
[5] This only applies to the R

duration is tp = 300 µs, and refers only to the applied load current.
[6] RG is a resistor incorporated internally into the package.
[7] 5.5 V ≤ VBG≤ 35 V
[8] An open circuit load can be detected in the off-state and requires an external pull-up resistor, R
[9] See Table 4 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH.

9397 750 12361

Product data Rev. 01 — 20 February 2004 7 of 16

per channel. The supply and input voltages for the R

BLon

tests are continuous. The specified pulse

BLon

.

L(oc)

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

200

R

BLon

(mΩ)

160

120

80

40

0

0 10203040

Tj = 150°C

Tj = 25°C

Tj = -40°C

VBG (V)

IL= 4 A; VIG=5V

Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values.

4

03pa96

03pa95

I

G

(mA)

overvoltage

3

undervoltage
shutdown

Tj = −40 °C

2

1

0

0 255075

Tj = 25 °C

Tj = 150 °C

shutdown

clamping

VBG (V)

VIG=5V

Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel

only; typical values.

9397 750 12361

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 01 — 20 February 2004 8 of 16

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

VSG (V)

max

03pa94

03pa98

16

I

L(lim)

(A)

12

8

4

0

0 4 8 12 16

= 16 V; VIG=5V;Tmb=25°C

BG

Fig 7. Self-limiting load current as a function of

battery-load voltage; typical values.

6

I

B

(µA)

5

I

S

(mA)

4

3

2

1

0

0123

VBG= 13 V; VIG=5V;Tj=25°CV

Fig 6. Status current as a function of status-ground

voltage; typical values.

3.5

V

IG(th)

(V)

3

03pa93

VBL (V)

03pa97

2.5

2

1.5

1

-50 0 50 100 150 200

V

IG(on)

V

IG(off)

min

Tj (°C)

5.5 V ≤ VBG≤ 35 V VBG=35V

Fig 8. Input-ground threshold voltage as a function of

Fig 9. Battery quiescent current as a function of

junction temperature.

4

2

0

-50 0 50 100 150 200
Tj (°C)

junction temperature; typical values.

9397 750 12361

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 01 — 20 February 2004 9 of 16

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

9. Dynamic characteristics

Table 8: Switching characteristics

Tmb=25°C; VBG= 13 V; resistive load RL=13Ω per channel; Figure 12.

Symbol Parameter Conditions Min Typ Max Unit

Turn-on measured from the input going HIGH

t

d(on)

dV/dt
t

on

turn-on delay time to 10 % V
rising slew rate 30 to 70 % V

on

turn-on switching time to 90 % V

L

L

L

Turn-off measured from the input going LOW

t

d(off)

dV/dt
t

off

turn-off delay time to 90 % V
falling slew rate 70 to 30 % V

off

turn-off switching time to 10 % V

L

L

L

Table 9: Capacitances

Tmb=25°C; f = 1 MHz; VIG=0V.

Symbol Parameter Conditions Min Typ Max Unit

C

sg

status-ground capacitance VSG= 5 V - 11 15 pF

Per channel

C

ig

C

bl

input-ground capacitance VBG=13V - 1520pF
battery-load capacitance VBL= 13 V - 130 180 pF

-30-µs

0.5 1 2 V/µs

- 60 220 µs

-20-µs

0.5 1 2 V/µs

- 40 200 µs

Table 10: Short circuit load protection characteristics

T

≤

125°C prior to the overload short circuit condition.

mb

Symbol Parameter Conditions Min Typ Max Unit

P

BL(OV)(th)

t

BL(d)(sc)

battery-load overload power threshold 5.5 ≤ VBG≤ 35 V; device trips if
battery-load short-circuit characteristic

P

BL>PBL(OV)(th)

; Figure 11

10 55 100 W

[1]

200 350 800 µs

time

[1] Short circuit response time t

t

BL(d)(sc)

≈

t

------------------------------------ -

d(sc)

P

BL



ln

------------------------- -



P

BL(OV)(th)

varies with battery-load power PBL according to the logarithmic model equation:

d(sc)

Table 11: Status response times

Limits are valid for−40°C≤T

≤

+150°C and typical values for Tmb=25°C unless otherwise specified.

mb

Symbol Parameter Conditions Min Typ Max Unit

Measured from when the input goes LOW to when the status goes LOW

t

d(oc)

open-circuit response time Figure 10 and 14 - 65 100 µs

9397 750 12361

Product data Rev. 01 — 20 February 2004 10 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

I

B

R

S

I

R

S

SS

V

SG

R

L(oc)

R

V

BG

I

I

I

V

IG

RI≥ 3.3 kΩ; RS=47kΩ; RSS≥ 3.3 kΩ and R

L(oc)

P

I

G

=10kΩ.

I

L

V

R

L

L

03pa90

V

S

Fig 10. Typical dynamic response circuit diagram including reverse supply protection and open load detection.

t

d(sc)

V

I

L

0 A

5 V

V

SG

0.7 V
0 V

5 V

V

IG

L

0 V

5 V

V

SG

0 V

5 V

V

IG

t

on

90%

dV/dt

dV/dt

on

t

off

off

10%

0

03pb03

0

03pa51

VBG= 13 V; VIG= 5 V and Tj=25°C

Fig 11. Short circuit protection waveforms. Fig 12. Resistive switching waveforms and definitions.

9397 750 12361

Product data Rev. 01 — 20 February 2004 11 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

V

0 V

L

PIP3221-DC

Dual channel high-side TOPFET™

t

E

BL(CL)S

I

L

0 A

5 V

V

SG

0 V

5 V

V

IG

0

03pa99

V

L

0 V

5 V

V

SG

0.7 V
0 V

5 V

V

IG

0

on

90%

t

off

Fig 13. Switching a large inductive load. Fig 14. Open circuit detect waveforms.

10. Package information for SOT427

Epoxy meets requirements of UL 94 V-0 at 1/8 inch thickness. Net mass: 1.5 g.
For soldering guidelines and surface mount footprint design, please visit

http://www.semiconductors.philips.com/package/

10%

t

d(oc)

03pb00

9397 750 12361

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 01 — 20 February 2004 12 of 16

Philips Semiconductors

11. Package outline

Plastic single-ended surface mounted package (Philips version of D2-PAK);
7 leads (one lead cropped)

E

D

1

mounting

base

D

PIP3221-DC

Dual channel high-side TOPFET™

SOT427

A

A

1

H

D

1

eeeeee

DIMENSIONS (mm are the original dimensions)

UNIT

mm

A

4.50

4.10

A

1.40

1.27

bc e

1

0.85

0.64

0.60

0.46

D

max.

11

4

D

1.60

1.20

L

7

b

0 2.5 5 mm

scale

L

2.90

2.10

H

p

D

15.80

14.80

E

1

10.30

1.27

9.70

p

c

Q

Q

2.60

2.20

OUTLINE
VERSION

SOT427

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-04-18

Fig 15. SOT427 (D2-PAK).

9397 750 12361

Product data Rev. 01 — 20 February 2004 13 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

12. Revision history

Table 12: Revision history

Rev Date CPCN Description

01 20040220 - Product data (9397 750 12361)

PIP3221-DC

Dual channel high-side TOPFET™

9397 750 12361

Product data Rev. 01 — 20 February 2004 14 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

Philips Semiconductors

13. Data sheet status

PIP3221-DC

PIP3221-DC

Dual channel high-side TOPFET™

Dual channel high-side TOPFET™

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheet containsdata from the preliminary specification. Supplementary data willbe published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

14. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitablefor
the specified use without further testing or modification.

[2][3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations orwarranties that theseproducts are
free from patent, copyright,or mask work right infringement, unless otherwise
specified.

16. Trademarks

15. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

9397 750 12361

9397 750 12361

Product data Rev. 01 — 20 February 2004 15 of 16

Product data Rev. 01 — 20 February 2004 15 of 16

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Functional description . . . . . . . . . . . . . . . . . . . 4

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

8 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

9 Dynamic characteristics . . . . . . . . . . . . . . . . . 10

10 Package information for SOT427 . . . . . . . . . . 12

11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 15

14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

PIP3221-DC

Dual channel high-side TOPFET™

© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 20 February 2004 Document order number: 9397 750 12361