Datasheet PIP 3210 R Datasheet (Philips)

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Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

DESCRIPTION QUICK REFERENCE DATA

Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
a 5 pin plastic surface mount

L

package.

SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

V
General controller for driving I
lamps, motors, solenoids, heaters. T

BG

L

j

R

ON

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection

STATUS

INPUT

GROUND

Nominal load current (ISO) 9 A

Continuous off-state supply voltage 50 V
Continuous load current 20 A
Continuous junction temperature 150 ˚C
On-state resistance Tj = 25˚C 38 mΩ

BATT

POWER
MOSFET

CONTROL &

PROTECTION

CIRCUITS

LOAD

RG

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load

3

12 45

mb Battery

September 2001 1 Rev 1.000

mb

B

I

TOPFET

HSS

S

Fig. 2. Fig. 3.

G

L

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

BG

I

L

P

D

T

stg

T

j

T

sold

-V

BG

-V

BG

RI, R

II, I

S

II, I

S

E

BL

Continuous supply voltage 0 50 V
Continuous load current T

Total power dissipation T

95˚C - 20 A

mb ≤

25˚C - 67 W

mb ≤

Storage temperature -55 175 ˚C
Continuous junction temperature

1

- 150 ˚C

Mounting base temperature during soldering - 260 ˚C

Reverse battery voltages

2

Continuous reverse voltage - 16 V
Peak reverse voltage - 32 V

Application information

S

External resistors

3

to limit input, status currents 3.2 - kΩ

Input and status

Continuous currents -5 5 mA
Repetitive peak currents δ ≤ 0.1, tp = 300 µs -50 50 mA
Inductive load clamping IL = 10 A, VBG = 16 V
Non-repetitive clamping energy Tj ≤ 150˚C prior to turn-off - 150 mJ

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

Electrostatic discharge capacitor Human body model; - 2 kV
voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

R

th j-mb

1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold T

2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must

3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.

Junction to mounting base - - 1.52 1.86 K/W

to protect the switch.

limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
rating must be observed.

4

the over temperature trip operates

j(TO)

j

September 2001 2 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

STATIC CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Clamping voltages

V
V

-V

-V

V

I

I

I
I

BG

BL

LG

LG

BG

B

L

G

L

Battery to ground IG = 1 mA 50 55 65 V
Battery to load IL = IG = 1 mA 50 55 65 V
Negative load to ground IL = 10 mA 18 23 28 V
Negative load voltage

1

IL = 10 A; tp = 300 µs202530V

Supply voltage battery to ground
Operating range

2

5.5 - 35 V

Currents 9 V ≤ VBG ≤ 16 V
Quiescent current

3

VLG = 0 V - - 20 µA

Tmb = 25˚C - 0.1 2 µA

Off-state load current

4

VBL = V

BG

--20µA

Tmb = 25˚C - 0.1 1 µA
Operating current
Nominal load current

Resistances V

5

6

IL = 0 A - 2 4 mA
VBL = 0.5 V Tmb = 85˚C 9 - - A

BG

I

L

7

t

p

T

mb

R

ON

On-state resistance 9 to 35 V 10 A 300 µs 25˚C - 28 38 mΩ

150˚C - - 70 mΩ

R

ON

On-state resistance 6 V 10 A 300 µs 25˚C - 36 48 mΩ

150˚C - - 88 mΩ

R

G

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.

Internal ground resistance IG = 10 mA 95 150 190 Ω

September 2001 3 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

INPUT CHARACTERISTICS

9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

I

V

IG

V

IG(ON)

V

IG(OFF)

∆V
I

I(ON)

I

I(OFF)

IG

Input current VIG = 5 V 20 90 160 µA
Input clamping voltage II = 200 µA 5.5 7 8.5 V
Input turn-on threshold voltage - 2.4 3 V
Input turn-off threshold voltage 1.5 2.1 - V
Input turn-on hysteresis - 0.3 - V
Input turn-on current VIG = 3 V - - 100 µA
Input turn-off current VIG = 1.5 V 10 - - µA

STATUS CHARACTERISTICS

The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

SG

V

SG

I

S

I

S

Status clamping voltage IS = 100 µA 5.5 7 8.5 V
Status low voltage IS = 100 µA--1V

Tmb = 25˚C - 0.7 0.8 V
Status leakage current VSG = 5 V - - 15 µA

Tmb = 25˚C - 0.1 1 µA
Status saturation current

1

VSG = 5 V 2 7 12 mA

Application information

R

S

External pull-up resistor - 47 - kΩ

OPEN CIRCUIT DETECTION CHARACTERISTICS

An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Open circuit detection 9 V ≤ VBG ≤ 35 V

I

L(TO)

∆I

L(TO)

1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to

September 2001 4 Rev 1.000

Low current detect threshold 0.24 - 1.6 A

Tj = 25˚C 0.4 0.8 1.2 A

Hysteresis - 0.16 - A

prevent possible interference with normal operation of the device.

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS

Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Undervoltage

V

BG(UV)

Low supply threshold voltage

1

2 4.2 5.5 V

∆V

BG(UV)

Hysteresis - 0.5 - V

Overvoltage

V

BG(OV)

∆V

BG(OV)

High supply threshold voltage
Hysteresis - 1 - V

2

40 45 50 V

TRUTH TABLE

ABNORMAL CONDITIONS

INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION

UV OV LC SC OT

L X X X X X OFF H off
H 0 0 0 0 0 ON H on & normal
H 0 0 1 0 0 ON L on & low current detect
H 1 0 X X X OFF H supply undervoltage lockout
H 0 1 X 0 0 OFF H supply overvoltage shutdown
H 0 0 0 1 X OFF L SC tripped
H 0 0 0 0 1 OFF L OT shutdown

DETECTED LOAD

3

KEY TO ABBREVIATIONS

L logic low UV undervoltage
H logic high OV overvoltage
X don’t care LC low current or open circuit load

0 condition not present SC short circuit

1 condition present OT overtemperature

1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD

PROTECTION CHARACTERISTICS.

September 2001 5 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

OVERLOAD PROTECTION CHARACTERISTICS

5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TRUTH TABLE.

I

L(lim)

Overload protection VBL = V
Load current limiting VBG ≥ 9 V 34 45 64 A

BG

Short circuit load protection

V

BL(TO)

Battery load threshold voltage

1

VBG = 16 V 8 10 12 V
VBG = 35 V 15 20 25 V

t

d sc

Response time

2

VBL > V

BL(TO)

- 180 250 µs

Overtemperature protection

T

∆T

j(TO)

j(TO)

Threshold junction 150 170 190 ˚C
temperature

3

Hysteresis - 10 - ˚C

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

During turn-on from input going high

t

d on

dV/dt
t

on

Delay time to 10% V
Rate of rise of load voltage 30% to 70% V

on

Total switching time to 90% V

L

L

L

-4060µs

- 0.35 1 V/µs

- 140 200 µs

During turn-off from input going low

t

d off

dV/dt
t

off

Delay time to 90% V
Rate of fall of load voltage 70% to 30% V

off

Total switching time to 10% V

L

L

L

-5580µs

- 0.6 1 V/µs

- 85 120 µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

C

ig

C

bl

C

sg

1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has

2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.

September 2001 6 Rev 1.000

Input capacitance VBG = 13 V - 15 20 pF
Output capacitance VBL = 13 V - 250 350 pF
Status capacitance VSG = 5 V - 11 15 pF

operated, the input voltage must be toggled low for the switch to resume normal operation.

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

I

/ mA

BG(ON)

VBL

IB

VBG

VIG

II

IS

VSG

RS

I

S

B

TOPFET

HSS

G

IG

IL

L

VLG

LOAD

Fig.4. High side switch measurements schematic.

(current and voltage conventions)

R

/ mOhm

ON

80

.

60

typ

VBG = 6 V

40

9 V =< VBG =< 35 V

20

0

-50 0 50 100 150 200

Tj / OC

Fig.5. Typical on-state resistance, tp = 300 µs.

RON = f(Tj); parameter VBG; condition IL = 10 A

5

4

UNDERVOLTAGE

SHUTDOWN

CLAMPING

OVERVOLTAGE

3

SHUTDOWN

OPERATING VIG = 5 V

2

1

QUIESCENT VIG = 0 V

0

0 10203040506070

V

/ V

BG

Fig.7. Typical supply characteristics, 25 ˚C.

IG = f(VBG); parameter V

R

/ mOhm

ON

40
38
36
34
32
30
28
26
24
22
20

1 10 100

VBG / V

IG

RON max

Fig.8. Typical on-state resistance,Tj = 25 ˚C.

RON = f(VBG); condition IL = 10 A; tp = 300 µs

/ A

I

L

50

VBG / V

> = 8

40

30

20

7
6

5

3.0

2.5

2.0

1.5

I

G

/ mA

lL = 0 A

lL > IL(TO)

lL > I

L(TO)

9 V <= VBG <= 35 V

typ.

1.0

10

0

012

VBL / V

Fig.6. Typical on-state characteristics, Tj = 25 ˚C.

IL = f(Tj); parameter VBG; tp = 250 µs

0.5

VBG = 50 V

0

-50 0 50 100 150 200
T

/ OC

j

Fig.9. Typical operating supply current.

IG = f(Tj); parameters IL, VBG; condition VIG = 5 V

September 2001 7 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

I

/ A

100E-6

10E-6

1E-6

B

max.

typ.

1.6

1.2

I

L(OC)

/ A

100E-9

10E-9

1E-9

100E-12

-50 0 50 100 150 200

Tj / OC

Fig.10. Typical supply quiescent current.

IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V

/ A

I

L

100E-6

10E-6

1E-6

100E-9

10E-9

1E-9

00E-12

10E-12

-50 0 50 100 150 200

Tj / OC

max.

typ.

Fig.11. Typical off-state leakage current.

IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V.

0.8

0.4

0.0

-50 0 50 100 150 200

Tj / OC

max.

typ.

min.

Fig.13. Low load current detection threshold.

I

= f(Tj); conditions VIG = 5 V; VBG ≥ 9 V

L(OC)

V

/ V

BG(UV)

5.5

4.5
typ.

3.5

2.5

-50 0 50 100 150 200
T

/ OC

j

on

off

Fig.14. Supply undervoltage thresholds.

V

= f(Tj); conditions VIG = 5 V; VBL ≤ 2 V

BG(UV)

/ V

I

/ A

S

100E-6

10E-6

1E-6

100E-9

10E-9

1E-9

-50 0 50 100 150 200

Tj / OC

Fig.12. Status leakage current.

IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V

max.

typ.

V

BG(OV)

55

50

45

40

35

-50 0 50 100 150 200

Tj / OC

max.

on

off
min.

Fig.15. Supply overvoltage thresholds.

V

= f(Tj); conditions VIG = 5 V; IL = 100 mA

BG(OV)

September 2001 8 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

V

/ V

SG(LOW)

1

8

6

IS / mA

0.5

0

-50 0 50 100 150 200

Tj / OC

Fig.16. Typical status low characteristic.

VSG = f(Tj); conditions VBG ≥ 9 V, IS = 100 µA

/ V

V

IG

3.00

2.50

V
V

IG(ON)

IG(OFF)

2.00

1.50

1.00

-50 0 50 100 150 200

Tj / OC

Fig.17. Typical threshold voltage characteristic.

VIG = f(Tj); condition 9V ≤ VBG ≤ 16V

4

2

0

012345

VSG / V

Fig.19. Typical status low characteristic, Tj = 25 ˚C.

IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A

/ V

V

SG

7.50

7.40

7.30

7.20

7.10

7.00

6.90

6.80

6.70

6.60

6.50

-50 0 50 100 150 200

Tj / OC

V

/ V =

IG

5

0

Fig.20. Typical status clamping voltage.

VSG = f(Tj); condition IS = 100µA, VBG = 13V

/ V

V

IG

7.50

7.40

7.30

7.20

7.10

7.00

6.90

6.80

6.70

6.60

6.50

-50 0 50 100 150 200

Tj / OC

Fig.18. Typical input clamping voltage.

VIG = f(Tj); condition II = 200µA, VBG = 13V

IS / mA

20

15

10

5

0

0246810

VSG / V

Fig.21. Typical status characteristic, Tj = 25 ˚C.

IS = f(VSG); conditions VIG = VBG = 0V

September 2001 9 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

/ V

/ V

V

BG

65

60

55

IG =

200 mA

1 mA

-10

-15

-20

-25

V

LG

IL =

10 mA

10 A

50

-50 0 50 100 150 200

Tj / OC

Fig.22. Typical battery to ground clamping voltage.

VBG = f(Tj); parameter I

/ V

V

BL

65

60

55

50

-50 0 50 100 150 200

Tj / OC

G

IL =

600 mA

1 mA

Fig.23. Typical battery to load clamping voltage.

VBL = f(Tj); parameter IL; condition IG = 10mA

IL / A

10

5

0

-30 -25 -20 -15 -10

VLG / V

Fig.24. Typical negative load clamping.

IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C

-30

-50 0 50 100 150 200

Tj / OC

Fig.25. Typical negative load clamping voltage.

VLG = f(Tj); parameter IL; condition VIG = = 0V

IL / A

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

VBL / V

Fig.26. Typical reverse diode characteristic.

IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C

IL / A

50
45
40
35
30
25
20
15
10

5
0

02468101214161820

current limiting

V

typ.

BL(TO)

VBL / V

Short circuit trip = 150us

Fig.27. Typical overload characteristic, Tmb = 25 ˚C.

IL = f(VBL); condition VBG = 16 V; parameter t

p

September 2001 10 Rev 1.000

Philips Semiconductors Product specification

/ V

TOPFET high side switch PIP3210-R

/ A

I

V

BL(TO)

35

30

25

20

15

10

5

0

0 1020304050

VBG / V

BUK215-50Y

max.

typ. 25˚C

min.

Fig.28. Short circuit load threshold voltage.

V

= f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C

BL(TO)

C

BL

10 nF

1nF

100pF

0 1020304050

VBL / V

Fig.29. Typical output capacitance. Tmb = 25 ˚C

Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

L(lim)

50

45

40

35

30

-50 0 50 100 150 200

Tj / OC

Fig.31. Typical overload current, VBL = 8V.

IL = f(Tj); parameter VBG = 13V;tp = 300 µs

V

/ V

BL(TO)

12.0

11.8

11.6

11.4

11.2

11.0

10.8

10.6

10.4

10.2

10.0

-50 0 50 100 150 200

Tj / OC

Fig.32. Typical short circuit load threshold voltage.

V

= f(Tj); condition VBG = 16 V

BL(TO)

IG / mA

0

-50

-100

-150

-200

-20 -15 -10 -5 0

VBG / V

Fig.30. Typical reverse battery characteristic.

IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C

1e+01

1e+00

1e-01

1e-02

1e-03

Zth j-mb ( K / W )

D =

0.5

0.2

0.1

0.05

0.02

t

p

P

1e-07

0

1e-05

t / s

D

T

1e-011e-03

Fig.33. Transient thermal impedance.

Zth

= f(t); parameter D = tp/T

j-mb

D =

September 2001 11 Rev 1.000

t

p

T

t

1e+02

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

MECHANICAL DATA

Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)

E

D

1

mounting

base

D

H

D

3

1

24 5

b

e e ee

A

1

L

p

c

Q

SOT426

A

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

D

1

10.30

1.60

1.20

REFERENCES

9.70

L

H

15.80

14.80

Q

D

2.60

2.20

EUROPEAN

PROJECTION

ISSUE DATE

98-12-14
99-06-25

e

E

1.70

2.90

2.10

p

UNIT

mm

A

4.50

4.10

OUTLINE

VERSION

SOT426

A

bc

1

1.40

0.85

1.27

0.60

IEC JEDEC EIAJ

Fig.34. SOT426 surface mounting package1, centre pin connected to mounting base.

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.

For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

September 2001 12 Rev 1.000

Philips Semiconductors Product specification

TOPFET high side switch PIP3210-R

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

1

STATUS

2

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

September 2001 13 Rev 1.000

available on the Internet at URL http://www.semiconductors.philips.com.