Storage Temperature ..........................................................–65°C to +150°C
Ambient Temperature with Power Applied ..........................–40°C to +85°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) ......... –0.5V to +7.0V
Supply Voltage to Ground Potential (Outputs & D/O Only) ..... –0. 5V to +7.0V
DC Input Voltage ...................................................................–0.5V to +7.0V
DC Output Current ............................................................................ 120mA
Power Dissipation................................................................................. 0.5W
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Parameters
(4)
Description Test Conditions Typ. Units
C
IN
Input Capacitance VIN = 0V 3 pF
C
OFF
A/B Capacitance, Switch Off VIN = 0V 5 pF
C
ON
A/B Capacitance, Switch On VIN = 0V 10 pF
Notes:
1 . For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for
the applicable device type.
2 . Typical values are at VCC = 5.0V, TA = 25°C ambient and maximum loading.
3. Measured by the voltage drop between A and B pin at indicated current through the switch.
ON resistance is determined by the lower of the voltages on the two (A, B) pins.
4 . This parameter is determined by device characterization but is not production tested.
DC Electrical Characteristics (Over the Operating Range, T
A
= –40°C to +85°C, VCC = 5V ± 10%)
sretemaraPnoitpircseDsnoitidnoCtseT
)1(
.niM.pyT
)2(
.xaMstinU
V
HI
egatloVHGIHtupnIleveLHGIHcigoLdeetnarauG0.2
V
V
LI
egatloVWOLtupnIleveLWOLcigoLdeetnarauG5.0-8.0
I
HI
tnerruCHGIHtupnIV
CC
V,.xaM=
NI
V=
CC
1±
Αµ
I
LI
tnerruCWOLtupnIV
CC
V,.xaM=
NI
DNG=1±
I
HZO
tnerruCtuptuOecnedepmIhgiHV
CC
V,.xaM=
TUO
VroV0=
CC
1±
I
LZO
tnerruCtuptuOecnedepmIwoLV
CC
V,.xaM=
TUO
VroV0=
CC
1±
V
H
sniPlortnoCtasiseretsyHtupnI 003Vm
R
NO
ecnatsiseRnOhctiwS
)3(
V
CC
V,V4=
NI
I,V4.2=
NO
Am51=4102
Ω
V
CC
V,V5.4=
NI
I,V0.0=
NO
Am46roAm03=57
V
CC
V,V5.4=
NI
I,V4.2=
NO
Am51=0151
Capacitance (TA = 25°C, f = 1 MHz)