Datasheet PHX3N40E Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

FEATURES SYMBOL QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching V

d

= 400 V

DSS

• Stable off-state characteristics

• High thermal cycling performance I

• Isolated package

g

s

R

DS(ON)

= 1.7 A

D

≤ 3.5 Ω

GENERAL DESCRIPTION PINNING SOT186A

N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.

case isolated
The PHX3N40E is supplied in the
SOT186A full pack, isolated
package.

case

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DSS

V

DGR

V

GS

I

D

I

DM

P

D

Tj, T

Drain-source voltage Tj = 25 ˚C to 150˚C - 400 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 400 V
Gate-source voltage - ± 30 V
Continuous drain current Ths = 25 ˚C; VGS = 10 V - 1.7 A

Ths = 100 ˚C; VGS = 10 V - 1.1 A
Pulsed drain current Ths = 25 ˚C - 10 A
Total dissipation Ths = 25 ˚C - 25 W
Operating junction and - 55 150 ˚C

stg

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

E

AS

E

AR

IAS, I

1 pulse width and repetition rate limited by Tj max.

December 1998 1 Rev 1.200

Non-repetitive avalanche Unclamped inductive load, IAS = 0.9 A; - 120 mJ
energy tp = 0.53 ms; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17
Repetitive avalanche energy1IAR = 2.5 A; tp = 2.5 µs; Tj prior to - 3.2 mJ

avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;

refer to fig:18
Repetitive and non-repetitive - 2.5 A

AR

avalanche current

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

s

C

iss

C

oss

C

rss

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

Thermal resistance junction with heatsink compound - - 5 K/W
to heatsink
Thermal resistance junction - 55 - K/W
to ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K

voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 1.25 A - 2 3.5 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 1.25 A 0.5 1.5 - S
Drain-source leakage current VDS = 400 V; VGS = 0 V - 1 25 µA

VDS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA

Total gate charge ID = 2.5 A; V
Gate-source charge - 2 3 nC

= 320 V; VGS = 10 V - 20 25 nC

DD

Gate-drain (Miller) charge - 8 12 nC
Turn-on delay time VDD = 200 V; RD = 82 Ω; - 10 - ns

Turn-on rise time RG = 24 Ω -25-ns
Turn-off delay time - 46 - ns
Turn-off fall time - 25 - ns

Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH

bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 240 - pF

Output capacitance - 44 - pF
Feedback capacitance - 26 - pF

December 1998 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous source current Ths = 25˚C - - 2.5 A
(body diode)
Pulsed source current (body Ths = 25˚C - - 10 A
diode)
Diode forward voltage IS = 2.5 A; VGS = 0 V - - 1.2 V

Reverse recovery time IS = 2.5 A; VGS = 0 V; dI/dt = 100 A/µs - 200 - ns
Reverse recovery charge - 2 - µC

December 1998 3 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

with heatsink compound

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-hs / (K/W)

1E+01

0.5

1E+00

1E-01

1E-02

0.2

0.1

0.05

0.02

P

D

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

ZTHX43

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

ID, Drain current (Amps)

8

Tj = 25 C

7
6
5
4
3
2
1
0

0 5 10 15 20 25 30

VDS, Drain-Source voltage (Volts)

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

PHP2N40

20 V

10 V

6.5 V
6 V

5.5 V
5 V

VGS = 4.5 V

.

GS

7 V

Drain current, ID (Amps)

10

RDS(ON) = VDS/ID

1

DC

0.1

0.01
10 100 1000

Drain-source voltage, VDS (Volts)

PHX1N40

tp =
10 us

100us

1ms
10ms

100ms

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source on resistance, RDS(ON) (Ohms)

6

5

4

3

2

1

0

012345678

6 V5.5 V5V

6.5 V

7 V

Drain current, ID (Amps)

10 V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

PHP2N40

Tj = 25 C

VGS = 20 V

.

GS

December 1998 4 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

Drain current, ID (A)

8

VDS > ID x RDS(on)max

7
6
5
4
3
2
1
0

0246810

Gate-source voltage, VGS (V)

Tj = 25 C

PHP2N40

150 C

Fig.7. Typical transfer characteristics.

ID = f(VGS); parameter T

Transconductance, gfs (S)

2.5
VDS > ID x RDS(on)max

2

1.5

1

Tj = 25 C

j

PHP2N40

150 C

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage

V

= f(Tj); conditions: ID = 0.25 mA; VDS = V

GS(TO)

1E-01

1E-02

1E-03

1E-04

ID / A

SUB-THRESHOLD CONDUCTION

2 %

typ

.

GS

98 %

0.5

0

012345678

Fig.8. Typical transconductance

a

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

Drain current, ID (A)

gfs = f(ID); parameter T

Normalised RDS(ON) = f(Tj)

Tj / C

.

j

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 1.25 A; VGS = 10 V

1E-05

1E-06

0 1 2 3 4

VGS / V

Fig.11. Sub-threshold drain current.

ID = f(V

Capacitances, Ciss, Coss, Crss (pF)

1000

100

10

1

1 10 100 1000

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

; conditions: Tj = 25 ˚C; VDS = V

GS)

Ciss

Coss

Crss

Drain-source voltage, VDS (V)

, C

iss

PHP2N40

oss

, C

GS

rss

.

December 1998 5 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

Gate-Source voltage, VGS (Volts)

20

ID = 2.5 A

15

10

5

0

0 10203040

Gate charge, Qg (nC)

200 V

100 V

PHP2N40

VDD = 320 V

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); parameter V

GS

Switching times, td(on), tr, td(off), tf (ns)

1000

VDD = 200V
RD = 82 Ohms
Tj = 25 C

100

td(off)

tr

tf

10

td(on)

1

0 20406080100

Gate resistance, RG (Ohms)

Fig.14. Typical switching times; t

d(on)

DS

, tr, t

PHP2N40

, tf = f(RG)

d(off)

Source-drain diode current, IF(A)

10

VGS = 0 V

8

6

4

2

0

0 0.5 1 1.5

Source-Drain voltage, VSDS (V)

PHP2N40

Tj = 25 C150 C

Fig.16. Source-Drain diode characteristic.

IF = f(V

Non-repetitive Avalanche current, IAS (A)

10

VDS

1

tp

ID

0.1
1E-06 1E-05 1E-04 1E-03 1E-02

); parameter T

SDS

Tj prior to avalanche = 25 C

125 C

Avalanche time, tp (s)

j

PHP3N40E

Fig.17. Maximum permissible non-repetitive

avalanche current (IAS) versus avalanche time (tp);

unclamped inductive load

Normalised Drain-source breakdown voltage

1.15

V(BR)DSS @ Tj
V(BR)DSS @ 25 C

1.1

1.05

1

0.95

0.9

0.85

-100 -50 0 50 100 150
Tj, Junction temperature (C)

Fig.15. Normalised drain-source breakdown voltage

V

(BR)DSS/V(BR)DSS 25 ˚C

= f(Tj)

;

Maximum Repetitive Avalanche Current, IAR (A)

10

1

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02

Tj prior to avalanche = 25 C

125 C

PHP3N40E

Avalanche time, tp (s)

Fig.18. Maximum permissible repetitive avalanche

current (IAR) versus avalanche time (tp)

December 1998 6 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10.3

Recesses (2x)

2.5

0.8 max. depth

3 max.

not tinned

13.5
min.

0.4

M

max

3.2

3.0

123

5.08

2.8

2.54

15.8

max.

3

19

max.

seating

plane

0.5

2.5

4.6

max

2.9 max

6.4

0.6

2.5

15.8
max

Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.

1.3

1.0 (2x)

0.9

0.7

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1998 7 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistors PHX3N40E
Avalanche energy rated

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1998 8 Rev 1.200