Datasheet PHB83N03LT, PHP83N03LT Datasheet (Philips)

1. Description

2. Features

PHP83N03LT; PHB83N03LT;
PHE83N03LT

N-channel TrenchMOS transistor

Rev. 01 — 23 January 2001 Product specification

N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHP83N03LT in a SOT78 (TO-220AB)
PHB83N03LT in a SOT404 (D2-PAK)
PHE83N03LT in a SOT226 (I2-PAK).

■ Low on-state resistance

■ Fast switching.

3. Applications

■ High frequency computer motherboard DC to DC converters

c

c

4. Pinning information

Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)
3 source (s)
mb mounting base,

connected to
drain (d)

[1]

MBK106

12mb3

SOT78 (TO-220AB) SOT404 (D

mb

2

13

MBK116

2

-PAK) SOT226 (I2-PAK)

123

MBK112

MBB076

d

g

s

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. TrenchMOS is a trademark of Royal Phillips Electronics.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to175°C − 25 V
drain current (DC) Tmb=25°C; VGS=5V − 75 A
total power dissipation Tmb=25°C − 115 W
junction temperature − 175 °C
drain-source on-state resistance VGS= 10 V; ID= 25 A; Tj=25°C 6.5 9 mΩ

=5V; ID= 25 A; Tj=25°C 1012mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

AS

I

AS

drain-source voltage (DC) Tj=25to175°C − 25 V
drain-gate voltage (DC) Tj=25to175°C; RGS=20kΩ−25 V
gate-source voltage (DC) −±15 V
gate-source voltage tp≤ 50 µs; pulsed;

duty cycle 25%; T

≤ 150 °C

j

−±20 V

drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 − 75 A

= 100 °C; VGS=5V;Figure 2 − 61 A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 − 240 A
total power dissipation Tmb=25°C; Figure 1 − 115 W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C − 75 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs − 240 A

non-repetitive avalanche energy unclamped inductive load;

=75A;tp= 0.1 ms; VDD=15V;

I

D

=50Ω; VGS= 5V; starting Tj=25°C

R

GS

non-repetitive avalanche current unclamped inductive load;

=15V;RGS=50Ω; VGS=5V;

V

DD

starting T

=25°C

j

− 120 mJ

− 75 A

9397 750 07815

Product specification Rev. 01 — 23 January 2001 2 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

120

P

110

der

(%)

100

90
80
70
60
50
40
30

20
10

0

0 20 40 60 80 100 120 140 160 180

P

P

der

tot

----------------------

P

tot 25 C°()

100%×= I

03ac97

Tmb (oC)

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

I

D

R

DSon

(A)

2

10

= V

T

03ad95

mb

(ºC)

der

120

I

der

(%)

100

80

60

40

20

0

0 60 120 180

I

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03ad86

/ I

DS

D

tp = 10 µs

100 µs

1 ms

10

1

1 10 10

D.C.

t

P

p

δ

=

T

t

t

p

T

10 ms
100 ms

V

DS

(V)

2

Tmb=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07815

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 23 January 2001 3 of 15

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting
base

thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

7.1 Transient thermal impedance

Figure 4 1.3 K/W

vertical in still air; SOT226 package 65 K/W
mounted on a printed circuit board; minimum

50 K/W

footprint; SOT404 and SOT226 packages

10

Z

th(j-sp)

(K/W)

1

10

10

10

-1

-2

-3
10

δ = 0.5

0.2

0.1

0.05

0.02

single pulse

-5

P

-4

10

-3

10

-2

10

-1

10

1 10

03ad85

t

p

δ

=

T

t

p

t

T

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 07815

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 23 January 2001 4 of 15

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

drain-source breakdown voltage ID= 0.25 mA; VGS=0V

=25°C25−−V

T

j

= −55 °C22−−V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 1 1.5 2 V

T

j

= 175 °C 0.5 −−V

T

j

= −55 °C −−2.3 V

T

j

drain-source leakage current VDS=25V; VGS=0V

=25°C − 0.05 10 µA

T

j

= 175 °C −−500 µA

T

j

gate-source leakage current VGS= ±5 V; VDS=0V − 10 100 nA
drain-source on-state resistance VGS=5V; ID=25A;Figure 7 and 8

=25°C − 10 12 mΩ

T

j

= 175 °C − 17 20.5 mΩ

T

j

= 10 V; ID=25A

V

GS

=25°C − 6.5 9 mΩ

T

j

forward transconductance VDS=25V; ID=30A;Figure 11 − 55 − S
total gate charge ID= 30 A; VDD=15V; VGS=5V;Figure 14 − 33 − nC
gate-source charge − 7 − nC
gate-drain (Miller) charge − 12.5 − nC
input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 12 − 1660 − pF
output capacitance − 590 − pF
reverse transfer capacitance − 380 − pF
turn-on delay time VDD=15V; ID= 1 A; VGS=10V; RG=6Ω;
turn-on rise time − 14 30 ns

resistive load

− 920ns

turn-off delay time − 75 95 ns
turn-off fall time − 60 80 ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 13 − 0.9 1.2 V

=40A;VGS=0V − 0.95 − V

I

S

9397 750 07815

Product specification Rev. 01 — 23 January 2001 5 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

75

I

D

(A)

60

45

30

15

0

0 0.4 0.8 1.2 1.6 2

4.5 V

10 V 3.5 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

0.06

2.5 V

R

(Ω)

0.05

0.04

0.03

0.02

DSon

VGS = 3 V Tj = 25 ºC

03ad87

Tj = 25 ºC

3 V

VGS = 2.5 V

(V)

V

DS

03ad88

3.5 V

75

VDS > ID x R

I

D

(A)

60

45

30

15

0

01234

=25°C and 175 °C; VDS>IDxR

j

DSon

175 ºC

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2

a

1.6

1.2

0.8

Tj = 25 ºC

DSon

03ad89

V

GS

03ad57

(V)

I

D

4.5 V
10 V

(A)

0.01

0

0 1530456075

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

0.4

=

a

----------------------------

R

0

-60 0 60 120 180

R

DSon

DSon 25 C°()

T

(ºC)

j

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 07815

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 23 January 2001 6 of 15

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 -20 20 60 100 140 180

ID= 1 mA; VDS=V

max

typ

min

GS

03aa33

Tj (oC)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

90

g

fs

(S)
75

60

45

30

15

VDS > ID x R

DSon

Tj = 25 ºC

175 ºC

03ad90

-1

10

I

D

-2

(A)

10

-3

10

-4

10

-5

10

-6

10

0

min

0.5 1 1.5 2 2.5 3

03aa36

maxtyp

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

10

C
C
C
(pF)

10

4

,

iss

,

oss

rss

3

03ad92

C

iss

C

oss

C

rss

0

0 1530456075

Tj=25°C and 175 °C; VDS> ID× R

DSon

(A)

I

D

Fig 11. Forward transconductance as a function of

drain current; typical values.

VGS=0V;f=1MHz

Fig 12. Input, output and reverse transfer capacitances

2

10

-1

10

1 10 10

V

2

(V)

DS

as a function of drain-source voltage; typical
values.

9397 750 07815

Product specification Rev. 01 — 23 January 2001 7 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

75

VGS = 0 V

I

S

(A)

60

45

30

15

0

0 0.3 0.6 0.9 1.2

175 ºC

03ad91

Tj = 25 ºC

V

(V)

SD

10

ID = 30 A

V

GS

(V)

Tj = 25 ºC

8

6

4

2

0

0 20406080

Tj=25°C and 175 °C; VGS=0V ID= 30 A; VDD= 5 V, 10V and 15 V

Fig 13. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

values.

VDD = 5 V

10 V 15 V

03ad93

(nC)

Q

G

9397 750 07815

© Philips Electronics N.V. 2001. All rights reserved.

Product specification Rev. 01 — 23 January 2001 8 of 15

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

P

A

1

q

D

1

D

(1)

L

2

b

L

1

L

1

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

3.30

2.79

(1)

L

2

L

1

max.

3.0

qQ

P

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

99-09-13
00-09-07

Fig 15. SOT78 (TO-220AB).

9397 750 07815

Product specification Rev. 01 — 23 January 2001 9 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

A

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE
VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.40

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

98-12-14
99-06-25

Fig 16. SOT404 (D2-PAK)

9397 750 07815

Product specification Rev. 01 — 23 January 2001 10 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

Plastic single-ended package; low-profile 3 lead TO-220AB SOT226

A

D

1

D

E

mounting

base

A

1

L

2

b

b

1.3

1.0

1

1

c

0.7

0.4

3-lead TO-220AB

L

DIMENSIONS (mm are the original dimensions)

A

UNIT

Note

1. Terminals in this zone are not tinned.

Ab

1

1.40

4.5

mm

OUTLINE
VERSION

SOT226

4.1

1.27

0.9

0.7

IEC JEDEC EIAJ

123

e

D

9.65

8.65

REFERENCES

low-profile

L

1

b

e

0 5 10 mm

scale

D

E

1

10.3

1.5

1.1

9.7

2.54

Q

c

(1)

L

3.30

2.79

L

2

1

max

2.6

3.0

2.2

EUROPEAN

PROJECTION

ISSUE DATE

99-05-27
99-09-13

L

eQ

15.0

13.5

Fig 17. SOT226 (I2-PAK)

9397 750 07815

Product specification Rev. 01 — 23 January 2001 11 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20010123 - Product specification; initial version

PHP83N03LT series

N-channel TrenchMOS transistor

9397 750 07815

Product specification Rev. 01 — 23 January 2001 12 of 15

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

11. Data sheet status

PHP83N03LT series

N-channel TrenchMOS transistor

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

9397 750 07815

© Philips Electronics N.V. 2001 All rights reserved.

Product specification Rev. 01 — 23 January 2001 13 of 15

Philips Semiconductors

PHP83N03LT series

N-channel TrenchMOS transistor

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Internet: http://www.semiconductors.philips.com

(SCA71)

9397 750 07815

Product specification Rev. 01 — 23 January 2001 14 of 15

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Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

PHP83N03LT series

N-channel TrenchMOS transistor

© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
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liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 23 January 2001 Document order number: 9397 750 07815