Datasheet PHB66NQ03LT, PHD66NQ03LT, PHP66NQ03LT Datasheet (Philips)

1. Description

2. Features

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Rev. 02 — 10 December 2001 Product data

N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

PHP66NQ03LT in SOT78 (TO-220AB)
PHB66NQ03LT in SOT404 (D2-PAK)
PHD66NQ03LT in SOT428 (D-PAK).

■ Low on-state resistance

■ Fast switching.

3. Applications

■ High frequency computer motherboard DC to DC converters.

4. Pinning information

Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 drain (d)

[1]

3 source (s)
mb mounting base,

connected to drain (d)

MBK106

12mb3

SOT78 (TO-220AB) SOT404 (D

[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.

mb

2

13

MBK116

2

-PAK) SOT428 (D-PAK)

mb

2

13

Top view

MBK091

MBB076

d

g

s

1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I

D

P
T
R

DS

tot
j
DSon

drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 25 V
drain current (DC) Tmb=25°C; VGS=10V - 66 A

=25°C; VGS=5V - 57 A

T

mb

total power dissipation Tmb=25°C - 93 W
junction temperature - 175 °C
drain-source on-state resistance VGS= 10 V; ID= 25 A; Tj = 25 °C 9.1 12 mΩ

=5V; ID= 25 A; Tj = 25 °C 12.3 16 mΩ

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 25 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 175 °C; RGS=20kΩ -25V
gate-source voltage (DC) - ±15 V
peak gate-source voltage tp≤ 50 µs; pulsed;

duty cycle 25%; T

≤ 150 °C

j

- ±20 V

drain current (DC) Tmb=25°C; VGS=5V;Figure 2 and 3 -57A

= 100 °C; VGS=5V;Figure 2 -40A

T

mb

=25°C; VGS=10V - 66 A

T

mb

= 100 °C; VGS=10V - 45 A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 228 A
total power dissipation Tmb=25°C; Figure 1 -93W
storage temperature −55 +175 °C
operating junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C - 57 A
peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 228 A

9397 750 09119

Product data Rev. 02 — 10 December 2001 2 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×= I

03aa16

T

(oC)

mb

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------

I

D25C

()

100%×=

°

03aa24

T

(oC)

mb

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03ag19

I

D

(A)

2

10

10

1

1 10 10

R

DSon

= V

DS

/ I

D

DC

tp = 10 µs

100 µs

1 ms

10 ms
100 ms

(V)

V

DS

2

Tmb=25°C; IDM is single pulse; VGS=5V.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 02 — 10 December 2001 3 of 14

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting
base

thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W

7.1 Transient thermal impedance

Figure 4 1.6 K/W

mounted on a printed circuit board; minimum

50 K/W

footprint; SOT404 and SOT428 packages

03ag18

t

p

δ =

T

t

p

t

T

(s)

t

p

Z

th(j-mb)

(K/W)

10

1

10

10

δ = 0.5

0.2

0.1

-1

0.05

0.02

single pulse

-2
10

-5

10

-4

10

-3

10

-2

10

-1

P

1 10

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 02 — 10 December 2001 4 of 14

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

g

fs

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 0.25 mA; VGS=0V

=25°C 25--V

T

j

= −55 °C 22--V

T

j

gate-source threshold voltage ID= 1 mA; VDS=VGS; Figure 9

=25°C 1 1.5 2 V

T

j

= 175 °C 0.5 - - V

T

j

= −55 °C - - 2.3 V

T

j

drain-source leakage current VDS=25V; VGS=0V

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

T

j

gate-source leakage current VGS= ±5 V; VDS= 0 V - 10 100 nA
drain-source on-state resistance VGS=5V; ID=25A;Figure 7 and 8

=25°C - 12.3 16 mΩ

T

j

= 175 °C - 22.1 28.8 mΩ

T

j

=10V; ID=25A

V

GS

=25°C - 9.1 12 mΩ

T

j

forward transconductance VDS=25V; ID=30A - 40 - S
total gate charge ID= 50 A; VDD=15V; VGS=5V;Figure 13 - 13.5 - nC
gate-source charge - 7 - nC
gate-drain (Miller) charge - 3.9 - nC
input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 - 1150 - pF
output capacitance - 330 - pF
reverse transfer capacitance - 180 - pF
turn-on delay time VDD=15V; ID= 25 A; VGS=5V;

= 5.6 Ω; resistive load

R

rise time - 90 135 ns

G

- 1525ns

turn-off delay time - 25 40 ns
fall time - 2540ns

source-drain (diode forward) voltage IS= 25 A; VGS=0V;Figure 12 - 0.95 1.2 V
reverse recovery time IS= 10 A; dIS/dt = −100 A/µs; VGS=0V - 32 - ns
recovered charge - 20 - nC

9397 750 09119

Product data Rev. 02 — 10 December 2001 5 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

VGS = 3 V

V

VGS = 4.5 VTj = 25 ºC

03ag20

4.5 V

3.5 V

DS

03ag21

10 V

5V

6 V

4 V

(V)

75

I

D

VDS > ID x R

(A)

60

45

30

15

0

012345

=25°C and 175 °C; VDS> IDx R

j

DSon

175 ºC

Tj = 25 ºC

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

2

a

1.6

1.2

0.8

75
I

D

Tj = 25 ºC

(A)

60

45

30

15

0

0 0.4 0.8 1.2 1.6 2

10 V

6 V

5 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

0.02

R

DSon

(Ω)

0.016

0.012

0.008

DSon

03ag22

(V)

V

GS

03af18

0.004

0

0 1530456075

(A)

I

D

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 09119

Fig 8. Normalized drain-source on-state resistance

0.4

0

-60 0 60 120 180

R

DSon

=

a

---------------------------- -

R

DSon 25 C°()

(ºC)

T

j

factor as a function of junction temperature.

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 02 — 10 December 2001 6 of 14

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 0 60 120 180

ID= 1 mA; VDS=V

max

typ

min

GS

03aa33

T

(oC)

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

4

10

C

(pF)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0 0.5 1 1.5 2 2.5 3

03aa36

maxtypmin

(V)

V

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03ag24

10

10

3

2

-1

10

1 10 10

C

iss

C

oss

C

rss

VDS (V)

2

VGS=0V;f=1MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 02 — 10 December 2001 7 of 14

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

75

I

VGS = 0 V

S

(A)

60

45

30

15

175 ºC

0

0 0.3 0.6 0.9 1.2

Tj = 25 ºC

03ag23

(V)

V

SD

10

V

GS

(V)

8

6

4

2

0

0102030

Tj=25°C and 175 °C; VGS=0V ID= 50 A; VDD= 15 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

Tj = 25 ºC
ID = 50 A

VDD = 15 V

03ag25

Q

(nC)

G

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Product data Rev. 02 — 10 December 2001 8 of 14

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

00-09-07
01-02-16

Fig 14. SOT78 (TO-220AB).

9397 750 09119

Product data Rev. 02 — 10 December 2001 9 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)

A

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE

VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25
01-02-12

Fig 15. SOT404 (D2-PAK).

9397 750 09119

Product data Rev. 02 — 10 December 2001 10 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)

seating plane

y

A

E

b

2

A

mounting

base

A

2

A

1

E

1

SOT428

D

1

D

H

E

L

2

2

L

13

b

1

e

e

1

DIMENSIONS (mm are the original dimensions)

A

(1)

A

UNIT

mm

Note

1. Measured from heatsink back to lead.

OUTLINE
VERSION

A

1

max.

0.65

2.38

0.45

2.22

SOT428 TO-252 SC-63

b

2

0.89

0.89

0.71

0.71

IEC JEDEC EIAJ

bc

b

1

max.

1.1

0.9

b

5.36

5.26

2

wAM

D

c

max.

0.4

6.22

0.2

5.98

REFERENCES

L

1

0 10 20 mm

scale

E

max.

6.73

6.47

E

min.

4.0

1

D

max.

4.81

4.45

1

ee

4.57

2.285

H

E

1

max.

10.4

9.6

L

1

L

min.

2.95

0.5

2.55

EUROPEAN

PROJECTION

L

0.7

0.5

2

y

w

max.

0.2 0.2

ISSUE DATE

98-04-07
99-09-13

Fig 16. SOT428 (D-PAK)

9397 750 09119

Product data Rev. 02 — 10 December 2001 11 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

02 20011210 - Includes product data; second version; supersedes initial version 29 August 2001.

• Section 1 “Description” Correction to typing mistake in name.

01 20010829 - Product data; initial version

9397 750 09119

Product data Rev. 02 — 10 December 2001 12 of 14

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Philips Semiconductors

Philips Semiconductors

11. Data sheet status

PHP/PHB/PHD66NQ03LT

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

N-channel TrenchMOS transistor

Data sheet status

Objective data Development This data sheet contains data from the objectivespecification for product development. Philips Semiconductors

Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a

Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representationor warranty that such applications will be suitable for
the specified use without further testing or modification.

[2]

Definition

reserves the right to change the specification in any manner without notice.

later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail]. Fax: [phone]

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

9397 750 09119

9397 750 09119

Product data Rev. 02 — 10 December 2001 13 of 14

Product data Rev. 02 — 10 December 2001 13 of 14

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 10 December 2001 Document order number: 9397 750 09119