Datasheet PHP33N10 Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring stable V
blocking voltage, fast switching and I
high thermal cycling performance P
withlowthermalresistance.Intended R
for use in Switched Mode Power

DS

D

tot

DS(ON)

Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 100 V
Drain current (DC) 34 A
Total power dissipation 175 W
Drain-source on-state resistance 0.057 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

D

I

DM

P

D

∆PD/∆TmbLinear derating factor Tmb > 25 ˚C - 1.167 W/K
V

GS

Tj, T

Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 34 A

Tmb = 100 ˚C; VGS = 10 V - 24 A
Pulsed drain current Tmb = 25 ˚C - 136 A
Total dissipation Tmb = 25 ˚C - 150 W

Gate-source voltage - ± 30 V
Operating junction and - 55 175 ˚C

stg

storage temperature range

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

April 1998 1 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V
∆T

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

d

L

s

C

iss

C

oss

C

rss

(BR)DSS
j

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.15 - V/K

voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 17 A - 0.052 0.057 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 50 V; ID = 17 A 12 16 - S
Drain-source leakage current VDS = 100 V; VGS = 0 V - 1 25 µA

VDS = 80 V; VGS = 0 V; Tj = 150 ˚C - 100 250 µA

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Total gate charge ID = 17 A; V

Gate-source charge - 8 11 nC

= 80 V; VGS = 10 V - 42 50 nC

DD

Gate-drain (Miller) charge - 20 30 nC
Turn-on delay time VDD = 50 V; ID = 17 A; - 18 - ns

Turn-on rise time RG = 9.1 Ω; RD = 2.9 Ω -40-ns
Turn-off delay time - 125 - ns
Turn-off fall time - 50 - ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF
Output capacitance - 450 - pF
Feedback capacitance - 130 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous source current Tmb = 25˚C - - 34 A
(body diode)
Pulsed source current (body Tmb = 25˚C - - 136 A
diode)
Diode forward voltage IS = 34 A; VGS = 0 V - - 1.5 V

Reverse recovery time IS = 17 A; VGS = 0 V; - 200 - ns

dI/dt = 100 A/µs

Reverse recovery charge - 1.0 - µC

April 1998 2 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

t

D =

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

70
60
50
40
30
20
10

0

VGS / V =

0 2 4 6 8 10

20

15

VDS / V

10

BUK456-100A

8

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

GS

p

t
T

t

7

6

5

4

.

1000

100

10

ID / A

RDS(ON) = VDS/ID

DC

1

1

10

VDS / V

BUK456-100A,B

A
B

tp = 10 us

100 us

1 ms
10 ms

100 ms

100

1000

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

0.2

0.1

4.5 5 5.5

0

0 20 40 60 80

6

ID / A

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

6.5

BUK456-100A

VGS / V =

7

7.5

.

GS

8

10

20

April 1998 3 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

ID / A

70
60
50
40
30
20
10

0

0 2 4 6 8 10

Tj / C =

VGS / V

BUK456-100A

25

150

Fig.7. Typical transfer characteristics.

ID = f(VGS); parameter T

gfs / S

20

10

j

BUK456-100A

VGS(TO) / V

4

3

2

1

0

-60 -20 20 60 100 140 180

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage

V

= f(Tj); conditions: ID = 0.25 mA; VDS = V

GS(TO)

1E-01

1E-02

1E-03

1E-04

ID / A

SUB-THRESHOLD CONDUCTION

2 %

typ

.

GS

98 %

0

0 20 40 60

Fig.8. Typical transconductance

gfs = f(ID); parameter T

a

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

-60 -20 20 60 100 140 180

ID / A

.

j

Normalised RDS(ON) = f(Tj)

Tj / C

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 17 A; VGS = 10 V

1E-05

1E-06

0 1 2 3 4

VGS / V

Fig.11. Sub-threshold drain current.

ID = f(V

10000

1000

100

10

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

; conditions: Tj = 25 ˚C; VDS = V

GS)

C / pF

0 20 40

VDS / V

BUK4y6-100

, C

iss

oss

Ciss

Coss

Crss

, C

GS

rss

.

April 1998 4 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

VGS / V

12

10

8

6

4

2

0

0 20 40

VDS / V =20

QG / nC

BUK456-100

80

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); parameter V

GS

Normalised Drain-source breakdown voltage

1.15

V(BR)DSS @ Tj
V(BR)DSS @ 25 C

1.1

1.05

1

0.95

DS

EAS, Normalised unclamped inductive energy (%)

120
110
100

90
80
70
60
50
40
30
20
10

0

20 40 60 80 100 120 140 160 180

Starting Tj ( C)

Fig.16. Normalised unclamped inductive energy.

EAS% = f(Tj)

VDD

+

L

VDS

VGS

0

T.U.T.

-

-ID/100

0.9

0.85

-100 -50 0 50 100 150
Tj, Junction temperature (C)

Fig.14. Normalised drain-source breakdown voltage

V

(BR)DSS/V(BR)DSS 25 ˚C

IF / A

70

60
50

40

30
20

10

0

0 1 2

Tj / C = 150

VSDS / V

= f(Tj)

BUK456-100A

25

Fig.15. Source-Drain diode characteristic.

IF = f(V

); parameter T

SDS

j

RGS

.

Fig.17. Unclamped inductive test circuit.

EAS= 0.5⋅LI

2

⋅V

D

(BR)DSS

/(V

R 01

shunt

(BR)DSS−VDD

)

April 1998 5 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

April 1998 6 Rev 1.100

Philips Semiconductors Product specification

PowerMOS transistor PHP33N10

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1998 7 Rev 1.100