Datasheet PHN603S Datasheet (Philips)

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

FEATURES SYMBOL QUICK REFERENCE DATA

• Schottky diode across each

D4

MOSFET VDS = 25 V

• Low on-state resistance

• Fast switching ID = 5.5 A

• Logic level compatible

• Surface mount package R

G6

D1

G1 G2

S1

G5
D2

S2

G4
D3

G3

S3

≤ 35 mΩ (VGS = 10 V)

DS(ON)

R

≤ 55 mΩ (VGS = 4.5 V)

DS(ON)

GENERAL DESCRIPTION PINNING SOT137-1 (SO24)

Six n-channel, enhancement PIN DESCRIPTION
mode, logic level, field-effect
power transistors and six schottky 1,4 drain 1
diodes configured as three 2 source 1
half-bridges. This device has low 3 gate 1
on-state resistance and fast 5,8 drain 2
switching. The intended 6 source 2
applicationisincomputerdisk and 7 gate 2
tape drives as a three phase 9,12 drain 3
brushless d.c. motor driver. 10 source 3

11 gate 3
The PHN603S is supplied in the 13 gate 4
SOT137-1 (SO24) surface 14-16, 18-20, 22-24 drain 4
mounting package. 17 gate 5

21 gate 6

1

12 13

Top view

24

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

P

tot

T

, T

stg

j

1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.

October 1998 1 Rev 1.000

Repetitive peak drain-source Tj = 25 ˚C to 150˚C - 25 V
voltage
Continuous drain-source voltage Tj ≤ 80 ˚C

1

-25V
Drain-gate voltage RGS = 20 kΩ -25V
Gate-source voltage - ± 20 V
Drain current per device (DC) Ta = 25 ˚C - 5.5 A

Ta = 100 ˚C - 3.5 A
Drain current per device (pulse Ta = 25 ˚C - 22 A
peak value)
Total power dissipation per device Ta = 25 ˚C - 1.67 W

Ta = 100 ˚C - 0.67 W
Total power dissipation all devices Ta = 25 ˚C - 2.78 W
conducting Ta = 100 ˚C - 1.11 W
Storage & operating temperature - 55 150 ˚C

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S

Three phase brushless d.c. motor driver

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

R

DS(ON)

I

GSS

I

DSS

Q

g(tot)

Q

gs

Q

gd

t

d on

t

r

t

d off

t

f

C

iss

C

oss

C

rss

Thermal resistance junction to FR4 board, minimum
ambient footprint

Per device 75 - K/W

All devices conducting 42 - K/W

Drain-source breakdown VGS = 0 V; ID = 1 mA 25 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.8 - V

Tj = 150˚C 0.4 - - V
Drain-source on-state VGS = 10 V; ID = 5 A - 30 35 mΩ
resistance VGS = 4.5 V; ID = 2.5 A - 50 55 mΩ

VGS = 10 V; ID = 5 A; Tj = 150˚C - 50 60 mΩ
Gate source leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 25 V; VGS = 0 V; - 0.2 1.0 mA
current Tj = 100˚C - 5 10 mA

Total gate charge ID = 1 A; V

= 20 V; VGS = 10 V - 17 - nC

DD

Gate-source charge - 1.7 - nC
Gate-drain (Miller) charge - 5.2 - nC

Turn-on delay time VDD = 20 V; ID = 1 A; - 8 - ns
Turn-on rise time VGS = 10 V; RG = 6 Ω -11-ns
Turn-off delay time Resistive load - 31 - ns
Turn-off fall time - 17 - ns

Input capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz - 650 - pF
Output capacitance - 320 - pF
Feedback capacitance - 130 - pF

SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

F

I

FRM

V

F

t

rr

October 1998 2 Rev 1.000

Continuous forward diode Ta = 25 ˚C - - 5.5 A
current
Repetitive peak forward diode - - 22 A
current
Diode forward voltage IF = 2.5 A; VGS = 0 V - 0.4 0.6 V

IF = 2.5 A; VGS = 0 V, Tj = 100 ˚C - 0.3 0.55 V

Reverse recovery time IF = 0.5 A to IR = 0.5 A - 20 - ns

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

Normalised Power Dissipation, PD (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

Normalised Drain Current, ID (%)

120

100

80

60

40

20

0

0 25 50 75 100 125 150

Ambient Temperature, Ta (C)

D 25 ˚C

= f(Ta)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ta); conditions: VGS ≥ 4.5 V

D 25 ˚C

tp

T

MOSFET

D = tp/T

t

Transient Thermal Impedance, Zth j-a (K/W)

100

D = 0.5

10

0.2

0.1

0.05

1

0.02

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Single pulse

pulse width, tp (s)

P

D

Fig.4. Transient thermal impedance; MOSFET.

Z

= f(t); parameter D = tp/T

th j-a

Transient Thermal Impedance, Zth j-a (K/W)

100

10

Single pulse

1

0.1

0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

pulse width, tp (s)

SCHOTTKY

P

D

tp

t

Fig.5. Transient thermal impedance; Schottky Diode.

Z

= f(t)

th j-a

junctions

Peak Pulsed Drain Current, IDM (A)

100

RDS(on) = VDS/ ID

10

1

0.1

0.01

0.1 1 10 100
Drain-Source Voltage, VDS (V)

d.c.

Fig.3. Safe operating area. Ta = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

PHN603S

tp = 100 us

1 ms
10 ms

100 ms

Rth j-b

40K/W

40K/W

MOSFET SCHOTTKY

6 PAIRS

MOSFET SCHOTTKY

40K/W

40K/W

board

Rth b-a

35K/W

ambient

Fig.6. Thermal model; typical values.

R

p

th j-b

and R

th b-a

October 1998 3 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

Drain Current, ID (A)

5

4.5 V

4

10V

3

2

1

0

012345

Drain-Source Voltage, VDS (V)

VGS = 3.4 V

2.4 V

PHN603S

Tj = 25 C

3.2 V

3 V

2.8 V

2.6 V

Fig.7. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

Drain-Source On Resistance, RDS(on) (Ohms)

0.5

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05
0

012345

2.8V

3V

3.2V

Drain Current, ID (A)

GS

Tj = 25 C

10V

PHN603S

VGS = 3.4 V

4.5V

Fig.8. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID); parameter V

DS(ON)

GS

Transconductance, gfs (S)

10

VDS > ID X RDS(ON)

9
8
7
6
5
4
3
2
1
0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

.

Fig.10. Typical transconductance, Tj = 25 ˚C

Tj = 25 C

Drain current, ID (A)

PHN603S

150 C

.

gfs = f(ID)

a

2

1.5

1

0.5

0

-50 0 50 100 150

.

Fig.11. Normalised drain-source on-state resistance.

SOT223 30V Trench

R

DS(ON)/RDS(ON)25 ˚C

Normalised RDS(ON) = f(Tj)

Tj / C

= f(Tj)

Drain current, ID (A)

5

VDS > ID X RDS(ON)

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

0 0.5 1 1.5 2 2.5 3 3.5

Gate-source voltage, VGS (V)

150 C

PHN603S

Tj = 25 C

Fig.9. Typical transfer characteristics.

ID = f(VGS)

VGS(TO) / V

5

4

3

typ.

2

min.

1

0

-100 -50 0 50 100 150 200
Tj / C

Fig.12. Gate threshold voltage.

V

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

PHN1013

GS

October 1998 4 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S
Three phase brushless d.c. motor driver

Drain current, ID (A)

100mA

10mA

1mA

100uA

10uA

1uA

012345

min

Gate-source voltage, VGS (V)

Sub-Threshold Conduction

typ

VDS = VGS

Tj = 25 C

Fig.13. Sub-threshold drain current.

ID = f(V

Capacitances, Ciss, Coss, Crss (pF)

10000

1000

100

0.1 1 10 100

Fig.14. Typical capacitances, C

; conditions: Tj = 25 ˚C

GS)

Drain-Source Voltage, VDS (V)

iss

, C

PHN603S

Ciss

Coss

Crss

, C

oss

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

rss

Gate-source voltage, VGS (V)

15

ID = 1A

14
13

Tj = 25 C

12
11

VDD = 20 V

10

9
8
7
6
5
4
3
2
1
0

0 5 10 15 20 25

Gate charge, QG (nC)

PHN603S

Fig.15. Typical turn-on gate-charge characteristics.

V

= f(QG)

GS

Source-Drain Diode Current, IF (A)

5

VGS = 0 V

4.5
4

3.5
3

2.5
2

1.5
1

0.5
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

.

Fig.16. Typical reverse diode current.

IF = f(V

); conditions: V

SDS

150 C

Tj = 25 C

Drain-Source Voltage, VSDS (V)

= 0 V; parameter T

GS

PHN603S

j

October 1998 5 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S

Three phase brushless d.c. motor driver

MECHANICAL DATA

SO24: plastic small outline package; 24 leads; body width 7.5 mm

D

c

y

Z

24

pin 1 index

1

e

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

max.

2.65

0.10

OUTLINE

VERSION

SOT137-1

A

1A2A3bp

0.30

2.45

0.10

0.012

0.004

0.25

2.25

0.096

0.01

0.089

IEC JEDEC EIAJ

075E05 MS-013AD

0.49

0.36

0.019

0.014

cD

0.32

0.23

0.013

0.009

REFERENCES

13

12

w

M

b

p

scale

(1)E(1) (1)

15.6

15.2

0.61

0.60

eHELLpQ

7.6

7.4

0.30

0.29

1.27

0.050

10.65

10.00

0.419

0.394

A

1.4

0.055

SOT137-1

E

H

E

2

A

1

detail X

1.1

1.1

1.0

0.043

0.039

0.25

0.01

EUROPEAN

PROJECTION

0.4

0.043

0.016

Q

L

p

L

(A )

3

0.25 0.1

0.01

0.004

A

X

v

M

A

θ

ywv θ

Z

0.9

0.4

0.035

0.016

ISSUE DATE

95-01-24

97-05-22

A

o

8

o

0

Fig.17. SOT137-1 (SO24) surface mounting package.

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.

2. Refer to Integrated Circuit Packages, Data Handbook IC26.

3. Epoxy meets UL94 V0 at 1/8".

October 1998 6 Rev 1.000

Philips Semiconductors Product specification

TrenchMOS/ Schottky diode array PHN603S

Three phase brushless d.c. motor driver

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1998 7 Rev 1.000