Datasheet PHE13009 Datasheet (Philips)

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

GENERAL DESCRIPTION

The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FEsat

t

f

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 12 A
Collector current peak value - 24 A
Total power dissipation Tmb ≤ 25 ˚C - 80 W
Collector-emitter saturation voltage IC = 5.0 A;IB = 1.0 A 0.32 1.0 V

IC = 5.0 A; VCE = 5 V - 40

Fall time IC = 5.0 A; IB1 = 1.0 A 0.1 0.5 µs

PIN DESCRIPTION

tab

c

1 base
2 collector

b

3 emitter

tab collector

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

C

I

CM

I

B

I

BM

P
T
T

CESM
CEO
CBO

tot
stg
j

Collector to emitter voltage VBE = 0 V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Collector current (DC) - 12 A
Collector current peak value - 24 A
Base current (DC) - 6 A
Base current peak value - 12 A
Total power dissipation Tmb ≤ 25 ˚C - 80 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

e

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R
R

th j-mb

th j-a

Junction to mounting base - 1.56 K/W
Junction to ambient in free air 60 - K/W

March 1999 1 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES,ICBO

I

CES

I

CEO

I

EBO

V

CEOsust

V

CEsat

Collector cut-off current

Collector cut-off current V
Emitter cut-off current VEB = 9 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V

Collector-emitter saturation voltage IC = 5.0 A;IB = 1.0 A - 0.32 1.0 V

1

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CEO

= V

(400V) - - 0.1 mA

CEOMmax

CESMmax

; - - 5.0 mA

CESMmax

- - 1.0 mA

L = 25 mH

IC = 8.0 A;IB = 1.6 A - - 2.0 V
V
h

h

BEsat

FE
FEsat

Base-emitter saturation voltage IC = 5.0 A;IB = 1.0 A - 1.0 1.3 V

IC = 8.0 A;IB = 1.6 A - 1.1 1.6 V

DC current gain IC = 5.0 A; VCE = 5 V 8 - 40

IC = 8.0 A; VCE = 5 V 6 - 30

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

s

t

f

Turn-off storage time 2.2 3.3 µs
Turn-off fall time 0.26 0.7 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 1.35 2.3 µs
Turn-off fall time 0.1 0.5 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time - 3.2 µs
Turn-off fall time - 0.9 µs

= 5 A; I

Con

RL = 75 ohms; V

= 5 A; I

Con

-VBB = 5 V

= 5A; I

Con

-VBB = 5 V; Tj = 100 ˚C

= -I

Bon

Bon

= 1 A; LB = 1 µH;

Bon

= 1 A;

Boff

= 4 V;

BB2

= 1 A; LB = 1 µH;

1 Measured with half sine-wave voltage (curve tracer).

March 1999 2 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

ICon

90 %

10 %

tf

IBon

30-60 Hz

6V

300R

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

Fig.

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

4.

Switching times waveforms with resistive load.

ts
toff

IC / mA

250

100

10

0

VCE / V

Fig.2. Oscilloscope display for V

VIM
0

tp

T

R

B

min

VCEOsust

VCC

R

L

T.U.T.

CEOsust

VCC

LC

IBon

-VBB

.

Fig.

5.

LB

T.U.T.

Test circuit inductive load.

VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

ICon

90 %

IC

10 %

ts
toff

IB

IBon

tf

t

t

-IBoff

Fig

.3.

Test circuit resistive load. VIM = -6 to +8 V

Fig.

6.

Switching times waveforms with inductive load.

VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from I

Con

and I

requirements.

Bon

March 1999 3 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

120

PD%

Normalised Power Derating

110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

Fig.7. Normalised power dissipation.

PD% = 100⋅PD/PD

HFE

50

30

20

15

10

5

= f (Tmb)

25˚C

1V

VBEsat VOLTAGE/V

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

0.5 0.8 3 5 7 9 12

IC/IB = 3

IC, COLLECTOR CURRENT/A

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V

VCEsat VOLTAGE/V

1.75

1.5

5V

1.25

1

0.75

= f(IC); at IC/IB =5.

BEsat

IC/IB = 3

2

0.01 0.05 0.1 0.5 1 2 3 5 12
IC/A

Fig.8. Typical DC current gain. hFE = f(IC)

parameter V

VCEsat/V

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0.01 0.1 1 10

CE

4A

3A
2A

1A

IB/A

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V

= f(IB); Tj=25˚C.

CEsat

0.5

0.25

0

0.5 0.8 3 5 7 9 12
IC, COLLECTOR CURRENT/A

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V

Zth / (K/W)

10

1

0.5

D=

0.2

0.1

0.05

0.1

0.02
0

0.01
1E-06 1E-04 1E-02 1E+00

= f(IC); at IC/IB =5.

CEsat

t

p

P

D

D =

T

t / s

t

p

T

t

Fig.12. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

March 1999 4 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

IC/A

14

12

10

VCC

8

6

-5V

4

2

0

0 100 200 300 400 500 600 700 800 900

VCEclamp/V

-3V

-1V

Fig.13. Reverse bias safe operating area (Tj < T

for -Vbe = 5V,3V and 1V.

jmax

LC

VCL(RBSOAR)

IBon

LB

-VBB

)

Fig.14. Test circuit for reverse bias safe operating

PROBE POINT

T.U.T.

area.

V

< 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;

clamp

LB = 1µH; LC = 200µH

March 1999 5 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.15. TO220AB; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

March 1999 6 Rev 1.000

Philips Semiconductors Preliminary specification

Silicon Diffused Power Transistor PHE13009

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

March 1999 7 Rev 1.000