Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
PHC20512
Complementary enhancement
mode
MOS transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Oct 22
Page 2
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-state resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
DESCRIPTION
One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN SYMBOL DESCRIPTION
1s
2g
3s
4g
5d
6d
7d
8d
handbook, halfpage
58
1
4
MAM118
1
1
2
2
2
2
1
1
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
d
d
1
1
g
s
1
Fig.1 Simplified outline and symbol.
PHC20512
d
d
2
2
g
s
1
2
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per channel
V
DS
drain-source voltage (DC)
N-channel − 30 V
P-channel −−30 V
V
V
V
I
D
SD
GS
GSth
source-drain diode forward voltage
N-channel I
P-channel I
= 1.25 A − 1V
S
= −1.25 A −−1.3 V
S
gate-source voltage (DC) −±20 V
gate-source threshold voltage
N-channel V
P-channel V
DS=VGS;ID
DS=VGS
= 1 mA 1 2.8 V
; ID= −1mA −1 −2.8 V
drain current (DC) Ts=80°C
N-channel − 6.4 A
P-channel −−4A
R
DSon
P
tot
drain-source on-state resistance
N-channel V
P-channel V
=10V; ID= 3.2 A − 0.05 Ω
GS
= −10 V ID= −2A − 0.12 Ω
GS
total power dissipation Ts=80°C − 3.5 W
1997 Oct 22 2
Page 3
Philips Semiconductors Product specification
Complementary enhancement mode
PHC20512
MOS transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per channel
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
I
SM
drain-source voltage (DC)
N-channel − 30 V
P-channel −−30 V
gate-source voltage (DC) −±20 V
drain current (DC) Ts=80°C; note 1
N-channel − 6.4 A
P-channel −−4A
peak drain current note 2
N-channel − 25 A
P-channel −−16 A
total power dissipation Ts=80°C; note 3 − 3.5 W
T
=25°C; note 4 − 2.6 W
amb
T
=25°C; note 5 − 1.1 W
amb
T
=25°C; note 6 − 1.5 W
amb
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source current (DC) Ts=80°C
N-channel − 3.5 A
P-channel −−2.6 A
peak pulsed source current note 2
N-channel − 14 A
P-channel −−10 A
Notes
is the temperature at the soldering point of the drain lead.
1. T
s
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an R
(ambient to tie-point) of 90 K/W.
th a-tp
1997 Oct 22 3
Page 4
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
handbook, halfpage
8
P
tot
(W)
6
4
2
0
0 50 100 150
MGG340
Ts (°C)
2
10
handbook, halfpage
I
D
(A)
10
P
1
−1
10
−1
10
PHC20512
MGG341
tp =
(1)
t
p
δ =
T
t
p
T
t
11010
10 µs
100 µs
1 ms
10 ms
100 ms
DC
V
DS
(V)
2
2
−10
handbook, halfpage
I
D
(A)
−10
−1
−1
−10
−1
−10
Fig.2 Power derating curve.
(1)
t
P
t
p
p
δ =
T
t
T
−1 −10 −10
VDS (V)
MBH587
tp =
10 µs
100 µs
1 ms
10 ms
100 ms
DC
δ =0.01; Ts=80°C.
(1) R
DSon
limitation.
Fig.3 SOAR; N-channel.
2
δ = 0.01; Ts=80°C.
(1) R
DSon
limitation.
Fig.4 SOAR; P-channel.
1997 Oct 22 4
Page 5
Philips Semiconductors Product specification
Complementary enhancement mode
PHC20512
MOS transistors
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per channel
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
C
iss
C
oss
C
rss
Q
G
Q
GS
thermal resistance from junction to soldering point 20 K/W
drain-source breakdown voltage
N-channel V
P-channel V
= 0; ID=10µA30−−V
GS
= 0; ID= −10 µA −30 −−V
GS
gate-source threshold voltage
N-channel V
P-channel V
GS=VDS
GS=VDS
; ID= 1 mA 1 − 2.8 V
; ID= −1mA −1 −−2.8 V
drain-source leakage current
N-channel V
P-channel V
= 0; VDS=24V −−100 nA
GS
= 0; VDS= −24 V −−−100 nA
GS
gate leakage current VGS= ±20 V; VDS=0
N-channel −−±100 nA
P-channel −−±100 nA
drain-source on-state resistance
N-channel V
P-channel V
= 4.5 V; ID= 1.6 A −−0.1 Ω
GS
V
= 10 V; ID= 3.2 A −−0.05 Ω
GS
= −4.5 V; ID= −1A −−0.25 Ω
GS
V
= −10 V; ID= −2A −−0.12 Ω
GS
input capacitance
N-channel V
P-channel V
= 0; VDS=24V; f=1MHz − 450 − pF
GS
= 0; VDS= −24 V; f = 1 MHz − 450 − pF
GS
output capacitance
N-channel V
P-channel V
= 0; VDS=24V; f=1MHz − 200 − pF
GS
= 0; VDS= −24 V; f = 1 MHz − 200 − pF
GS
reverse transfer capacitance
N-channel V
P-channel V
= 0; VDS=24V; f=1MHz − 100 − pF
GS
= 0; VDS= −24 V; f = 1 MHz − 100 − pF
GS
total gate charge
N-channel V
P-channel V
= 10 V; VDD= 15 V; ID= 3.2 A − 15 − nC
GS
= −10 V; VDD= −15 V; ID= −2A − 13 − nC
GS
gate-source charge
N-channel V
P-channel V
= 10 V; VDD= 15 V; ID= 3.2 A − 1 − nC
GS
= −10 V; VDD= −15 V; ID= −2A − 1 − nC
GS
1997 Oct 22 5
Page 6
Philips Semiconductors Product specification
Complementary enhancement mode
PHC20512
MOS transistors
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
GD
t
d(on)
t
d(off)
t
f
t
r
t
on
t
off
Source-drain diode
V
SD
t
rr
gate-drain charge
N-channel V
P-channel V
turn-on delay time
N-channel V
P-channel V
turn-off delay time
N-channel V
P-channel V
fall time
N-channel V
P-channel V
rise time
N-channel V
P-channel V
turn-on switching time
N-channel V
P-channel V
turn-off switching time
N-channel V
P-channel V
source-drain diode forward
voltage
N-channel V
P-channel V
reverse recovery time
N-channel I
P-channel I
= 10 V; VDD= 15 V; ID= 3.2 A − 5 − nC
GS
= −10 V; VDD= −15 V; ID= −2A − 4 − nC
GS
= 0to10V; VDD=15V; ID=1A;
GS
R
=6Ω
gen
=0to−10 V; VDD= −15 V;
GS
ID= −1 A; R
=10to0V; VDD=15V;
GS
ID= 1 A; R
= −10 to 0 V; VDD= −15 V;
GS
ID= −1 A; R
= 0to10V; VDD=15V; ID=1A;
GS
R
=6Ω
gen
= −10 to 0 V; VDD= −15 V;
GS
ID= −1 A; R
=10to0V; VDD=15V; ID=1A;
GS
R
=6Ω
gen
=0to−10 V; VDD= −15 V;
GS
ID= −1 A; R
= 0to10V; VDD=15V; ID=1A;
GS
R
=6Ω
gen
=0to−10 V; VDD= −15 V;
GS
ID= −1 A; R
=10to0V; VDD=15V;
GS
ID= 1 A; R
= −10 to 0 V; VDD= −15 V;
GS
ID= −1 A; R
= 0; IS= 1.25 A −−1V
GD
= 0; IS= −1.25 A −−−1.3 V
GD
= 1.25 A; di/dt = −100 A/µs − 45 − ns
S
= −1.25 A; di/dt = 100 A/µs − 75 − ns
S
gen
gen
gen
gen
gen
gen
gen
gen
=6Ω
=6Ω
=6Ω
=6Ω
=6Ω
=6Ω
=6Ω
=6Ω
− 7 − ns
− 6 − ns
− 20 − ns
− 29 − ns
− 8 − ns
− 16 − ns
− 12 − ns
− 4 − ns
− 15 − ns
− 10 − ns
− 32 − ns
− 45 − ns
1997 Oct 22 6
Page 7
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
andbook, full pagewidth
V
in
V
DD
R
L
V
out
MAM274
PHC20512
90 %
V
in
10 %
0
90 %
V
out
0
t
d(on)
10 %
t
t
f
t
on
d(off)
t
r
t
off
handbook, full pagewidth
Fig.5 Switching times test circuit with input and output waveforms; N-channel.
0
10 %
−V
DD
R
L
V
out
V
in
V
in
90 %
0
V
out
t
d(on)
10 %
90 %
t
t
r
t
on
d(off)
10 %
t
f
t
off
90 %
MGD391
Fig.6 Switching times test circuit with input and output waveforms; P-channel.
1997 Oct 22 7
Page 8
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
2
10
handbook, full pagewidth
R
th js
(K/W)
(1)
10
1
−1
10
−6
10
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
−5
10
−4
10
PHC20512
MGG342
t
P
t
p
T
−3
10
−2
10
−1
10
δ =
tp (s)
p
T
t
1
(1) δ = 0.75. (2) δ = 0.5. (3) δ = 0.33. (4) δ = 0.2.
(5) δ = 0.1. (6) δ = 0.05. (7) δ = 0.02. (8) δ = 0.01. (9) δ =0.
Fig.7 Transient thermal resistance from junction to soldering point as a function of pulse time
for N- and P-channels; typical values.
1997 Oct 22 8
Page 9
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
1250
handbook, halfpage
C
(pF)
1000
750
500
250
0
0 4 8 12 16 20
VGS= 0; f = 1 MHz; Tj=25°C.
(1) C
.
iss
(2) C
.
oss
(3) C
.
rss
(1)
(2)
(3)
MGG343
VDS (V)
1250
handbook, halfpage
C
(pF)
1000
750
500
250
0
0 −4 −8 −12 −16 −20
VGS= 0; f = 1 MHz; Tj=25°C.
(1) C
.
iss
(2) C
.
oss
(3) C
.
rss
PHC20512
MGG352
(1)
(2)
(3)
VDS (V)
Fig.8 Capacitance as a function of drain-source
voltage; N-channel typical values.
30
handbook, halfpage
I
D
(A)
20
10
0
04812
T
=25°C; tp=80µs; δ =0.
amb
(1) VGS=10V.
(2) VGS=5V.
(3) VGS= 4.5 V.
(1)
(4) VGS=4V.
(5) VGS= 3.5 V.
(6) VGS=3V.
MGG344
(2)
(3)
(4)
(5)
(6)
VDS (V)
Fig.9 Capacitance as a function of drain source
voltage; P-channel typical values.
−16
handbook, halfpage
I
D
(A)
−12
−8
−4
0
0 −4 −8 −12
T
=25°C; tp=80µs; δ =0.
amb
(1) VGS= −10 V.
(2) VGS= −5V.
(3) VGS= −4.5 V.
(1)
(4) VGS= −4V.
(5) VGS= −3.5 V.
(6) VGS= −3V.
MGG353
(2)
(3)
(4)
(5)
(6)
VDS (V)
Fig.10 Output characteristics; N-channel
typical values.
1997 Oct 22 9
Fig.11 Output characteristics; P-channel
typical values.
Page 10
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
30
handbook, halfpage
I
D
(A)
20
10
0
0246
MGG345
VGS (V)
−16
handbook, halfpage
I
D
(A)
−12
−8
−4
0
0 −2 −4 −6
PHC20512
MGG354
VGS (V)
VDS= 10 V; T
=25°C; tp=80µs; δ =0.
amb
Fig.12 Transfer characteristic; N-channel
typical values.
16
handbook, halfpage
V
(V)
12
8
(1) (2)
4
0
04 16
VDD= 12.5 V; ID= 3.2 A; T
(1) VDS.
(2) V
GS.
812
=25°C.
amb
MGG346
QG (nC)
VDS= −10 V; T
=25°C; tp=80µs; δ =0.
amb
Fig.13 Transfer characteristic; P-channel
typical values.
−16
handbook, halfpage
VDS, V
GS
(V)
−12
(1) (2)
−8
−4
0
04 16
VDD= −12.5 V; ID= −2 A; T
(1) VDS.
(2) V
GS.
812
=25°C.
amb
MGG355
QG (nC)
Fig.14 Gate-source voltage and drain-source
voltage as a function of total gate charge;
N-channel typical values.
1997 Oct 22 10
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
Page 11
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
16
handbook, halfpage
I
S
(A)
12
8
4
0
0 0.4 0.8 1.2
VGD=0.
(1) T
(2) T
(3) T
= 150 °C; tp= 300 µs; δ =0.
amb
=25°C; tp= 300 µs; δ =0.
amb
= −65 °C; tp= 300 µs; δ =0.
amb
(1) (2) (3)
MGG347
VSD (V)
−10
handbook, halfpage
I
S
(A)
−8
−6
−4
−2
0
0 −0.4 −0.8 −1.2
VGD=0.
(1) T
(2) T
(3) T
= 150 °C; tp= 300 µs; δ =0.
amb
=25°C; tp= 300 µs; δ =0.
amb
= −65 °C; tp= 300 µs; δ =0.
amb
PHC20512
MGG356
(1) (2) (3)
VSD (V)
Fig.16 Source current as a function of source-drain
diode forward voltage; N-channel typical
values.
Fig.17 Source current as a function of source-drain
diode forward voltage; P-channel typical
values.
1997 Oct 22 11
Page 12
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
3
10
handbook, halfpage
R
DSon
(mΩ)
2
10
10
(1)
(2)
(3)
(4)
(5)
MGG348
100 2468
VGS (V)
3
10
handbook, halfpage
R
DSon
(mΩ)
2
10
10
PHC20512
MGG357
(1)
(2)
(3)
(4)
(5)
(6)
−100 −2 −4 −6 −8
VGS (V)
VDS≥ ID× R
= 0.5 A.
(1) I
D
(2) ID= 1.6 A.
(3) ID= 3.2 A.
(4) ID= 6.4 A.
(5) ID=10A.
DSon
; T
=25°C; tp= 300 µs; δ =0.
amb
Fig.18 Drain-source on-state resistance as a
function of gate-source voltage; N-channel
typical values.
VDS≥ ID× R
= 0.1 A.
(1) I
D
(2) ID= 0.5 A.
(3) ID=1A.
(4) ID=2A.
(5) ID=4A.
(6) ID=8A.
DSon
; T
=25°C; tp= 300 µs; δ =0.
amb
Fig.19 Drain-source on-state resistance as a
function of gate-source voltage; P-channel
typical values.
1997 Oct 22 12
Page 13
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
1.3
handbook, halfpage
k
1.2
1.1
1
0.9
0.8
0.7
−100
−50 1500 50 100
MGG349
Tj (°C)
1.3
handbook, halfpage
k
1.2
1.1
1
0.9
0.8
0.7
−100
PHC20512
MGG358
−50 1500 50 100
Tj (°C)
V
at T
GSth
k
=
-------------------------------------V
GSth
V
at VDS=VGS; ID= 1 mA.
GSth
j
at 25°C
Fig.20 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; N-channel typical values.
V
at T
GSth
k
=
-------------------------------------V
GSth
V
at VDS=VGS; ID= −1 mA.
GSth
j
at 25°C
Fig.21 Temperature coefficient of gate-source
threshold voltage as function of junction
temperature; P-channel typical values.
1997 Oct 22 13
Page 14
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
handbook, halfpage
2
k
1.5
1
0.5
0
−100
−50 150
0
50 100
MGG359
(1)
(2)
Tj (°C)
handbook, halfpage
2
k
1.5
1
0.5
0
−100
PHC20512
MGG359
(1)
(2)
−50 150
0
50 100
Tj (°C)
R
at T
k
=
----------------------------------------R
DSon
(1) R
DSon
(2) R
DSon
DSon
j
at 25 °C
at VGS= 10 V; ID= 3.2 A.
at VGS= 4.5 V; ID= 1.6 A.
Fig.22 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; N-channel typical values.
R
at T
DSon
k
=
----------------------------------------R
DSon
(1) R
DSon
(2) R
DSon
j
at 25 °C
at VGS= −10 V; ID= −2A.
at VGS= −4.5 V; ID= −1A.
Fig.23 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; P-channel typical values.
1997 Oct 22 14
Page 15
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
D
c
y
Z
8
5
PHC20512
SOT96-1
E
H
E
A
X
v M
A
A
pin 1 index
1
e
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
1.75
0.069
A
1
0.25
0.10
0.010
0.004
A2A
1.45
1.25
0.057
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
UNIT
inches
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
4
w M
b
p
0 2.5 5 mm
scale
(1)E(2)
cD
5.0
4.8
0.20
0.19
eHELLpQZywv θ
4.0
1.27
3.8
0.16
0.050
0.15
2
A
6.2
5.8
0.244
0.228
Q
3
A
θ
0.25 0.10.25
0.010.010.041 0.004
(1)
0.7
0.3
0.028
0.012
o
8
o
0
L
p
L
0.7
0.6
0.028
0.024
(A )
1
detail X
1.0
1.05
0.4
0.039
0.016
OUTLINE
VERSION
SOT96-1
IEC JEDEC EIAJ
076E03S MS-012AA
REFERENCES
1997 Oct 22 15
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
Page 16
Philips Semiconductors Product specification
Complementary enhancement mode
PHC20512
MOS transistors
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 22 16
Page 17
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
NOTES
PHC20512
1997 Oct 22 17
Page 18
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
NOTES
PHC20512
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Page 19
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors
NOTES
PHC20512
1997 Oct 22 19
Page 20
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
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Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
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Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
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04552-903 São Paulo, SÃO PAULO - SP, Brazil,
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Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 137107/00/03/pp20 Date of release: 1997 Oct 22 Document order number: 9397 75002977
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